DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
82S212/BWA	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	9	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X9	256		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified				e0
HEC4505BD	NXP Semiconductors	STANDARD SRAM	MILITARY	14	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE				125 Cel	3-STATE	64X1	64	3 V	-55 Cel		DUAL	1	R-CDIP-T14		15 V				Not Qualified	64 bit	3 V			NO			660 ns
5962-8605201WX	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel		DUAL		R-PDIP-T22		5.25 V				Not Qualified	2048 bit	4.75 V
PCF8570P/F5,112	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4	NO	.0000004 Amp	9.5 mm
PCF8571PN	NXP Semiconductors	STANDARD SRAM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words				8	IN-LINE			2.54 mm	70 Cel		128X8	128		-25 Cel		DUAL		R-PDIP-T8		6 V	4.2 mm		7.62 mm	Not Qualified	1024 bit	2.5 V					9.5 mm
74F219AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.2 mm		7.62 mm	Not Qualified	64 bit	4.5 V			NO		19.025 mm	8 ns
5962-8605201WA	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel	TIN LEAD	DUAL		R-PDIP-T22		5.25 V				Not Qualified	2048 bit	4.75 V		e0
74HC670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm		7.62 mm	Not Qualified	16 bit	2 V		e4	NO		21.6 mm	59 ns
74HC670N	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm		7.62 mm	Not Qualified	16 bit	2 V		e4	NO		21.6 mm	59 ns
8602301EA	NXP Semiconductors	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDIP-T16		5.5 V				Qualified	4096 bit	4.5 V						120 ns
HEC4505BDB	NXP Semiconductors	STANDARD SRAM	MILITARY	14	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	64X1	64	3 V	-55 Cel		DUAL	1	R-GDIP-T14		15 V	5.08 mm		7.62 mm	Not Qualified	64 bit	4.5 V			NO			660 ns
PCF8570CP	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE			2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel		DUAL	1	R-PDIP-T8		6 V	4.2 mm		7.62 mm	Not Qualified	2048 bit	2.5 V	I2C BUS INTERFACE		NO		9.5 mm
10145F	NXP Semiconductors	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	165 mA	16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	16X4	16		-30 Cel	TIN LEAD	DUAL	1	R-GDIP-T16						Not Qualified	64 bit			e0	NO			13 ns
933984380602	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE			2.54 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	64 bit	4.5 V					21.6 mm	8 ns
HEF4505BP	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	14	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64X1	64	3 V	-40 Cel		DUAL	1	R-PDIP-T14		15 V	4.2 mm		7.62 mm	Not Qualified	64 bit	3 V			NO		19.025 mm	660 ns
FCB61C65-70P	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0		.003 Amp		70 ns
HEF4505BDF	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	14	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	SERIAL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64X1	64	3 V	-40 Cel		DUAL	1	R-GDIP-T14		15 V	5.08 mm		7.62 mm	Not Qualified	64 bit	4.5 V			NO			660 ns
HEF4720BPB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm		7.62 mm	Not Qualified	256 bit	3 V			NO		21.6 mm	580 ns
HEF4720BP	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	3/15	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm		7.62 mm	Not Qualified	256 bit	3 V			NO		21.6 mm	580 ns
HEF4505BPB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	14	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64X1	64	3 V	-40 Cel		DUAL	1	R-PDIP-T14		15 V	4.2 mm		7.62 mm	Not Qualified	64 bit	4.5 V			NO		19.025 mm	660 ns
HEF4720VPN	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		12.5 V	4.7 mm		7.62 mm	Not Qualified	256 bit	4.5 V			NO		21.6 mm	580 ns
HEF4720BDF	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V			NO			580 ns
HEF4720BDB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V			NO			580 ns
HEF4720VDB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		12.5 V	5.08 mm		7.62 mm	Not Qualified	256 bit	4.5 V			NO			580 ns
HEF4505BD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	14	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64X1	64	3 V	-40 Cel		DUAL	1	R-GDIP-T14		15 V	5.08 mm		7.62 mm	Not Qualified	64 bit	3 V			NO			660 ns
HEF4505BPN	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	14	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64X1	64	3 V	-40 Cel		DUAL	1	R-PDIP-T14		15 V	4.2 mm		7.62 mm	Not Qualified	64 bit	4.5 V			NO		19.025 mm	660 ns
HEF4505BDB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	14	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64X1	64	3 V	-40 Cel		DUAL	1	R-GDIP-T14		15 V	5.08 mm		7.62 mm	Not Qualified	64 bit	4.5 V			NO			660 ns
HEF4720VP	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	4.5/12.5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm		7.62 mm	Not Qualified	256 bit	3 V			NO		21.6 mm	580 ns
HEF4720VPB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		12.5 V	4.7 mm		7.62 mm	Not Qualified	256 bit	4.5 V			NO		21.6 mm	580 ns
HEF4720BPN	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm		7.62 mm	Not Qualified	256 bit	3 V			NO		21.6 mm	580 ns
HEF4720VD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V			NO			580 ns
HEF4720VDF	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		12.5 V	5.08 mm		7.62 mm	Not Qualified	256 bit	4.5 V			NO			580 ns
HEF4720BD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V			NO			580 ns
FM1408-80PSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24						Not Qualified	16384 bit					.0001 Amp		80 ns
FMX1208-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL		R-XDIP-T24						Not Qualified	4096 bit					.00004 Amp		100 ns
CY7B162A-25PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO					THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0				25 ns
TTS92256N-45C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28						Not Qualified	262144 bit					.02 Amp		45 ns
TTS92256NC-12C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit					.02 Amp		12 ns
TTS92256NC-15C-6	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28						Not Qualified	262144 bit					.02 Amp		15 ns
FM1108-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-PDIP-T24						Not Qualified	2048 bit					.00004 Amp		100 ns
FMX1408-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28						Not Qualified	16384 bit					.00004 Amp		100 ns
FMX1008-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL		R-XDIP-T24						Not Qualified	1024 bit					.00004 Amp		200 ns
CY7B162A-45DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO			38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0				45 ns
CY7B161A-45DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO					THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						Not Qualified	65536 bit			e0				45 ns
FM24164-PS	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			.3 mA	2048 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL		R-PDIP-T8						Not Qualified	16384 bit					.00006 Amp		3000 ns
FMX1108-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL		R-XDIP-T24						Not Qualified	2048 bit					.00004 Amp		100 ns
TTS92256N-20C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28						Not Qualified	262144 bit					.02 Amp		20 ns
5962-1821201QXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-PRF-38535 Class Q		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				125 Cel		128KX8	128K		-55 Cel	GOLD	DUAL		R-XDIP-T32	1	5.5 V				Qualified	1048576 bit	4.5 V		e4				35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.