DIP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
TTS92256N-35M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL	R-XDIP-T28	Not Qualified	262144 bit		.015 Amp	35 ns
FMX1008-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL	R-PDIP-T24	Not Qualified	1024 bit		.00004 Amp	150 ns
TTS92256N-55M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL	R-XDIP-T28	Not Qualified	262144 bit		.02 Amp	55 ns
FM1308-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			16 mA	1024 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		1KX8	1K		0 Cel		DUAL	R-XDIP-T24	Not Qualified	8192 bit		.00004 Amp	200 ns
FM1008-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL	R-XDIP-T24	Not Qualified	1024 bit		.00004 Amp	200 ns
FM24CZ16-C	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			.25 mA	2048 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel		DUAL	R-XDIP-T8	Not Qualified	16384 bit		.000001 Amp	3000 ns
FMX1308-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	1024 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		1KX8	1K		0 Cel		DUAL	R-PDIP-T24	Not Qualified	8192 bit		.00004 Amp	100 ns
FMX1008-150DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL	R-XDIP-T24	Not Qualified	1024 bit		.00004 Amp	150 ns
FM1208S-200PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			10 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL	R-PDIP-T24	Not Qualified	4096 bit		.0001 Amp	200 ns
CY7B162A-35DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28	Not Qualified	65536 bit	e0		35 ns
CY7B161A-25DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28	Not Qualified	65536 bit	e0		25 ns
CY7B161A-45PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28	Not Qualified	65536 bit	e0		45 ns
TTS92256N-20C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL	R-PDIP-T28	Not Qualified	262144 bit		.02 Amp	20 ns
FMX1408-200PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL	R-PDIP-T24	Not Qualified	16384 bit		.00004 Amp	200 ns
SMD5962-9232404MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			55 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL	R-XDIP-T28	Not Qualified	65536 bit		.0015 Amp	55 ns
FM1408-80DSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL	R-XDIP-T24	Not Qualified	16384 bit		.0001 Amp	80 ns
CY7B161A-25DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28	Not Qualified	65536 bit	e0		25 ns
CY7B162A-15DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28	Not Qualified	65536 bit	e0		15 ns
FM1408S-150DSC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL	R-XDIP-T24	Not Qualified	16384 bit		.0001 Amp	150 ns
FMX1108-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	256 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		256X8	256		0 Cel		DUAL	R-PDIP-T24	Not Qualified	2048 bit		.00004 Amp	100 ns
FM1208S-200CC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			10 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL	R-XDIP-T24	Not Qualified	4096 bit		.0001 Amp	200 ns
SMD5962-9232406MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL	R-XDIP-T28	Not Qualified	65536 bit		.0015 Amp	35 ns
FM1008-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL	R-PDIP-T24	Not Qualified	1024 bit		.00004 Amp	150 ns
FMX1408-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL	R-PDIP-T24	Not Qualified	16384 bit		.00004 Amp	150 ns
TTS92256N-25C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL	R-PDIP-T28	Not Qualified	262144 bit		.02 Amp	25 ns
FM24C08-PS	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			.3 mA	1024 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		1KX8	1K		-40 Cel		DUAL	R-PDIP-T8	Not Qualified	8192 bit		.00006 Amp	3000 ns
CY7B161A-35DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28	Not Qualified	65536 bit	e0		35 ns
CY7B161A-35PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28	Not Qualified	65536 bit	e0		35 ns
CY7B162A-20DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28	Not Qualified	65536 bit	e0		20 ns
FM1408-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL	R-PDIP-T24	Not Qualified	16384 bit		.00004 Amp	100 ns
CY7B162A-25DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28	Not Qualified	65536 bit	e0		25 ns
CY7B162A-15PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28	Not Qualified	65536 bit	e0		15 ns
FM25040-PT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			1.5 mA	512 words		5	5	8	IN-LINE	DIP8(UNSPEC)	SRAMs		85 Cel		512X8	512		-40 Cel		DUAL	R-PDIP-T8	Not Qualified	4096 bit		.00001 Amp	240 ns
FM1208-100PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL	R-PDIP-T24	Not Qualified	4096 bit		.00004 Amp	100 ns
FM1408-80PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			15 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL	R-PDIP-T24	Not Qualified	16384 bit		.0001 Amp	80 ns
FM1208-150PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL	R-PDIP-T24	Not Qualified	4096 bit		.00004 Amp	150 ns
FM1608-80DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			4.5 mA	8192 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL	R-XDIP-T24	Not Qualified	65536 bit		.0001 Amp	80 ns
SMD5962-9232405MXC	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			65 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL	R-XDIP-T28	Not Qualified	65536 bit		.0015 Amp	45 ns
SMD5962-9232405MXX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			65 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL	R-XDIP-T28	Not Qualified	65536 bit		.0015 Amp	45 ns
FMX1208-200DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			16 mA	512 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		512X8	512		0 Cel		DUAL	R-XDIP-T24	Not Qualified	4096 bit		.00004 Amp	200 ns
CY7B161A-25PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28	Not Qualified	65536 bit	e0		25 ns
FM1008-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL	R-XDIP-T24	Not Qualified	1024 bit		.00004 Amp	100 ns
SMD5962-9232404MXX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			55 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL	R-XDIP-T28	Not Qualified	65536 bit		.0015 Amp	55 ns
FM24C64-P	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			1.2 mA	8192 words		5	5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL	R-PDIP-T8	Not Qualified	65536 bit		.00001 Amp
FM1408-200PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL	R-PDIP-T24	Not Qualified	16384 bit		.00004 Amp	200 ns
TTS92256N-35C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL	R-XDIP-T28	Not Qualified	262144 bit		.02 Amp	35 ns
FMX1008-200PC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS		THROUGH-HOLE			16 mA	128 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel		DUAL	R-PDIP-T24	Not Qualified	1024 bit		.00004 Amp	200 ns
CY7B162A-35PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28	Not Qualified	65536 bit	e0		35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.