SOP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY14E101Q3A-SF104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V		e3				.00015 Amp	10.2865 mm
CY14B101J3-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V		e3				.00015 Amp	10.2865 mm
CY14E101PA-SF104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V		e3				.00025 Amp	10.2865 mm
CY14B101PA-SF104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V		e3				.00025 Amp	10.2865 mm
CY14B512Q2A-SXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words		3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		64KX8	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	524288 bit	2.7 V		e4		260		.00015 Amp	4.889 mm
CY14V101Q3-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		3.3	1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	PURE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	3 V				260		.005 Amp	10.2865 mm
CY14MB064Q2A-SXQT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	2.7 V				260	NO	.00025 Amp	4.889 mm
CY14V101QS-SF108XQT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	105 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V							10.2865 mm
CY14E101PA-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V		e3				.00025 Amp	10.2865 mm
CY14C101Q2A-S104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G8	3	2.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.4 V		e4	30	260		.00015 Amp	4.889 mm
CY14E064L-45XC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3					Not Qualified	65536 bit			e4	20	260		.0025 Amp		45 ns
CY14B512Q1-SFXIT	Infineon Technologies	NON-VOLATILE SRAM		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE	SOP16,.4		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G16		3.6 V	2.667 mm	40 MHz	7.4925 mm		524288 bit	2.7 V					NO	.005 Amp	10.2865 mm
CY14MB064Q1B-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14ME064J1A-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8		5.5 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	4.5 V					NO	.00015 Amp	4.889 mm
CY14B512Q3-SFXI	Infineon Technologies	NON-VOLATILE SRAM		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE	SOP16,.4		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G16		3.6 V	2.667 mm	40 MHz	7.4925 mm		524288 bit	2.7 V					NO	.005 Amp	10.2865 mm
CY14MB064Q2B-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14ME064Q1B-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8		5.5 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	4.5 V					NO	.00015 Amp	4.889 mm
CY14MB064J2A-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14ME064J2A-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8		5.5 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	4.5 V					NO	.00015 Amp	4.889 mm
CY14B512Q1-SFXI	Infineon Technologies	NON-VOLATILE SRAM		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE	SOP16,.4		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G16		3.6 V	2.667 mm	40 MHz	7.4925 mm		524288 bit	2.7 V					NO	.005 Amp	10.2865 mm
CY14ME064Q2B-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8		5.5 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	4.5 V					NO	.00015 Amp	4.889 mm
CY14MB064J1A-SXI	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14B512Q2-SFXI	Infineon Technologies	NON-VOLATILE SRAM		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE	SOP16,.4		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G16		3.6 V	2.667 mm	40 MHz	7.4925 mm		524288 bit	2.7 V					NO	.005 Amp	10.2865 mm
CY14MB064J1A-SXIT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14ME064J2-SXQ	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel		8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8	3	5.5 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	4.5 V					NO	.00025 Amp	4.889 mm
CY14ME064J2-SXQT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel		8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8	3	5.5 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	4.5 V					NO	.00025 Amp	4.889 mm
STK12C68-SF45TR	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0015 Amp	18.3895 mm	45 ns
STK12C68-SF25TR	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5		1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0015 Amp	18.3895 mm	25 ns
CY14ME064Q2A-SXQT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	6 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8		5.5 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	4.5 V					NO	.00025 Amp	4.889 mm
CY14B512I-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		64KX8	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	524288 bit	2.7 V		e3				.00025 Amp	10.2865 mm
CY14E101J1-SXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.00015 Amp	4.889 mm
CY14MB064Q2B-SXIT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14B101Q1A-S104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.7 V		e4	30	260		.00015 Amp	4.889 mm
CY14MB064Q1B-SXIT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	40 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14V101QS-SE108XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V		e4		260			10.2865 mm
CY62138FLL-45SXI	Infineon Technologies	SRAM STD	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	2097152 bit	4.5 V		e4	20	260		.000005 Amp	20.4465 mm	45 ns
CY14B064I-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.495 mm	Not Qualified	65536 bit	2.7 V		e4		260		.00025 Amp	10.28 mm
CY14B512Q2-SFXIT	Infineon Technologies	NON-VOLATILE SRAM		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE	SOP16,.4		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G16		3.6 V	2.667 mm	40 MHz	7.4925 mm		524288 bit	2.7 V					NO	.005 Amp	10.2865 mm
CY14V101QS-SE108XQ	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	105 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V		e4		260			10.2865 mm
CY14E101Q1A-S104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.00015 Amp	4.889 mm
CY14B101Q1A-S104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.7 V		e4	30	260		.00015 Amp	4.889 mm
CY14C101PA-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V		e3				.00025 Amp	10.2865 mm
CY14MB064J2A-SXIT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.727 mm	3.4 MHz	3.8985 mm		65536 bit	2.7 V					NO	.00012 Amp	4.889 mm
CY14C101J2-SXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G8	3	2.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.4 V		e4	30	260		.00015 Amp	4.889 mm
CY14C101J3-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V		e3				.00015 Amp	10.2865 mm
CY14V101QS-SE108XQT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	105 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16		3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V		e4					10.2865 mm
DS1609S-50+	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	MATTE TIN	DUAL	2, (MUXED)	R-PDSO-G24	1					Not Qualified	2048 bit			e3	30	260		.0003 Amp		50 ns
DS2223Z	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words	COMMON	5	2/5.5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel	OPEN-DRAIN	256X1	256		-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-G4	1	5.5 V	1.8 mm		3.5 mm	Not Qualified	256 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0					6.5 mm	1000 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.