Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
65536 bit |
4.5 V |
DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT |
e0 |
.000001 Amp |
17.9 mm |
150 ns |
|||||||||||||||
Maxim Integrated |
MULTI-PORT SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
256 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256X8 |
256 |
4.5 V |
-40 Cel |
TIN LEAD |
DUAL |
2, (MUXED) |
R-PDSO-G24 |
1 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
2048 bit |
2.5 V |
MUX ADDRESS DATA LATCH |
e0 |
.0003 Amp |
15.4 mm |
50 ns |
|||||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
2048 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
2.67 mm |
7.5 mm |
Not Qualified |
16384 bit |
4.5 V |
IT CAN ALSO OPERATES AT 3V |
e0 |
.000001 Amp |
17.9 mm |
100 ns |
||||||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
4 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
224 words |
5 |
1 |
SMALL OUTLINE |
2.3 mm |
85 Cel |
224X1 |
224 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G4 |
5.5 V |
1.8 mm |
3.5 mm |
Not Qualified |
224 bit |
1.2 V |
SELF-TIMED 1-WIRE INTERFACE |
e0 |
6.5 mm |
1000 ns |
|||||||||||||||||||||||
Maxim Integrated |
MULTI-PORT SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
256 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256X8 |
256 |
2.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
2, (MUXED) |
R-PDSO-G24 |
Not Qualified |
2048 bit |
e0 |
.0003 Amp |
50 ns |
|||||||||||||||||||||
Maxim Integrated |
MULTI-PORT SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
256 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256X8 |
256 |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
2, (MUXED) |
R-PDSO-G24 |
Not Qualified |
2048 bit |
e0 |
.0003 Amp |
50 ns |
|||||||||||||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
4 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
1 |
SMALL OUTLINE |
2.3 mm |
85 Cel |
256X1 |
256 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G4 |
5.5 V |
1.8 mm |
3.5 mm |
Not Qualified |
256 bit |
1.2 V |
SELF-TIMED 1-WIRE INTERFACE |
e0 |
6.5 mm |
1000 ns |
|||||||||||||||||||||||
Maxim Integrated |
NON-VOLATILE SRAM |
COMMERCIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
.5 mA |
32 words |
3/5 |
8 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
70 Cel |
32X8 |
32 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
.00000015 Amp |
15000 ns |
|||||||||||||||||||||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
15.4 mm |
||||||||||||||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
4 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
224 words |
COMMON |
5 |
2/5.5 |
1 |
SMALL OUTLINE |
SOT-223 |
SRAMs |
2.3 mm |
85 Cel |
OPEN-DRAIN |
224X1 |
224 |
-40 Cel |
TIN LEAD |
DUAL |
1, (1 LINE) |
R-PDSO-G4 |
1 |
5.5 V |
1.8 mm |
3.5 mm |
Not Qualified |
224 bit |
1.2 V |
SELF-TIMED 1-WIRE INTERFACE |
e0 |
20 |
240 |
6.5 mm |
1000 ns |
||||||||||||||
|
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
2048 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
2.67 mm |
7.5 mm |
Not Qualified |
16384 bit |
4.5 V |
IT CAN ALSO OPERATES AT 3V |
e3 |
30 |
260 |
.000001 Amp |
17.9 mm |
100 ns |
|||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
SMALL OUTLINE |
85 Cel |
2KX8 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
Not Qualified |
16384 bit |
2.7 V |
CAN ALSO BE OPERATED WITH 5V SUPPLY |
e0 |
20 |
240 |
150 ns |
||||||||||||||||||||||||
Maxim Integrated |
NON-VOLATILE SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
25 mA |
2048 words |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16384 bit |
e0 |
.007 Amp |
100 ns |
|||||||||||||||||||||||||||||
|
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G24 |
1 |
3.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
16384 bit |
2.7 V |
ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY |
e3 |
15.4 mm |
250 ns |
|||||||||||||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G24 |
1 |
3.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
16384 bit |
2.7 V |
ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY |
e0 |
15.4 mm |
250 ns |
||||||||||||||||||||||
Maxim Integrated |
STANDARD SRAM |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
2048 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP24,.4 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
3.05 mm |
8.565 mm |
Not Qualified |
16384 bit |
2.7 V |
DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT |
e0 |
.000001 Amp |
15.6 mm |
100 ns |
||||||||||||||
Maxim Integrated |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
6 mA |
128 words |
8 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G16 |
Not Qualified |
1024 bit |
e0 |
.0025 Amp |
||||||||||||||||||||||||||||||
|
Maxim Integrated |
NON-VOLATILE SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
128 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
2.67 mm |
7.5 mm |
Not Qualified |
1024 bit |
4.5 V |
DATA RETENTION > 10 YEARS |
e3 |
30 |
260 |
10.28 mm |
125 ns |
|||||||||||||||||||
|
Maxim Integrated |
NON-VOLATILE SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
128 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
2.67 mm |
7.5 mm |
Not Qualified |
1024 bit |
4.5 V |
DATA RETENTION > 10 YEARS |
e3 |
30 |
260 |
10.28 mm |
125 ns |
|||||||||||||||||||
Maxim Integrated |
NON-VOLATILE SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
6 mA |
128 words |
5 |
8 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
1024 bit |
4.5 V |
DATA RETENTION > 10 YEARS |
e0 |
.0025 Amp |
10.3 mm |
125 ns |
|||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.00005 Amp |
85 ns |
|||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.0001 Amp |
20.6 mm |
100 ns |
||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
.00002 Amp |
18.5 mm |
85 ns |
||||||||||||||
Toshiba |
STANDARD SRAM |
OTHER |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
-30 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16384 bit |
e0 |
.000001 Amp |
250 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
3 |
3/5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2.7 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
3.3 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
2.7 V |
USER SELECTABLE 5V VCC |
e0 |
YES |
.000025 Amp |
20.6 mm |
80 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
OTHER |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2048 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-30 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16384 bit |
e0 |
.000001 Amp |
200 ns |
||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
3.3 |
3/5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
2.7 V |
USER SELECTABLE 5V VCC |
e0 |
YES |
.00001 Amp |
18.5 mm |
120 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
70 ns |
||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
20.6 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDSO-G28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
100 ns |
||||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
20.6 mm |
100 ns |
|||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
18.5 mm |
70 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
3 |
3/5 |
8 |
SMALL OUTLINE |
SOP32,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2.7 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
3.3 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
2.7 V |
USER SELECTABLE 5V VCC |
e0 |
YES |
.000025 Amp |
20.6 mm |
70 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
85 Cel |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDSO-G28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
70 ns |
||||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.000015 Amp |
20.6 mm |
70 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
OTHER |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
-30 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16384 bit |
e0 |
.00003 Amp |
200 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
70 ns |
||||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
3.3 |
3/5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
2.7 V |
USER SELECTABLE 5V VCC |
YES |
.00001 Amp |
18.5 mm |
150 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
3.3 |
3/5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
2.7 V |
USER SELECTABLE 5V VCC |
e0 |
YES |
.000015 Amp |
20.6 mm |
150 ns |
|||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
20.6 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
85 ns |
||||||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.6 mm |
100 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00005 Amp |
20.6 mm |
100 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
OTHER |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP24,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
-30 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16384 bit |
e0 |
.00003 Amp |
250 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
20.6 mm |
85 ns |
|||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
18.5 mm |
100 ns |
||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
8.8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00005 Amp |
20.6 mm |
80 ns |
||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
2.8 mm |
10.7 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
20.6 mm |
85 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.