SOP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
R1LV0108ESP-5SR#B	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE					70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V				1048576 bit	2.7 V							55 ns
R1LV0108ESF-5SR#S	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE					70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V				1048576 bit	2.7 V							55 ns
R1LV1616RSA-8SW	Renesas Electronics	STANDARD SRAM	OTHER	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE		8			85 Cel		1MX16	1M		-20 Cel		DUAL		R-PDSO-G48		3.6 V			Not Qualified	16777216 bit	2.7 V							85 ns
M5M5256DFP-55XL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28	2	5.5 V	2.4 mm	8.4 mm	Not Qualified	262144 bit	4.5 V						17.5 mm	55 ns
UPD431000AGW-70LL-E2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	2.95 mm	11.3 mm	Not Qualified	1048576 bit	4.5 V		e0					70 ns
RMLV0414EGSB-4S2#AA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE					85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44	3	3.6 V				4194304 bit	2.7 V							45 ns
R1LP0408DSP-7SR#B	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE					70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V				4194304 bit	4.5 V							70 ns
KM6164000AL-LG-45L-L	Samsung	STANDARD SRAM			SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE							256KX16	256K				DUAL		R-PDSO-G					Not Qualified	4194304 bit								45 ns
K6T4008C1B-GB55	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0				20.47 mm	55 ns
K6L0908V2A-GD100	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K		-25 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	524288 bit	3 V						20.47 mm	100 ns
KM62V256CLT-5L	Samsung	STANDARD SRAM			SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE							32KX8	32K				DUAL		R-PDSO-G					Not Qualified	262144 bit								55 ns
KM616V4000ALG-5L	Samsung	STANDARD SRAM			SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE							256KX16	256K				DUAL		R-PDSO-G					Not Qualified	4194304 bit								55 ns
KM62256ALG-8L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0		YES	.00002 Amp	18.29 mm	80 ns
K6X4008T1F-GB700	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32	1	3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	2.7 V					.00001 Amp	20.47 mm	70 ns
K6T0808C1D-GL55	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V		e0				18.29 mm	55 ns
K6X1008T2D-BB700	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G32	3	3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V		e6			.000006 Amp	20.47 mm	70 ns
K6X0808T1D-GB85	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0					85 ns
K6X1008C2D-BB700	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32	2	5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V					.00001 Amp	20.47 mm	70 ns
KM62256DLGI-70LTR	Samsung	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V						18.29 mm	70 ns
K6T4008C1C-GB70T	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0					70 ns
K6T0808V1D-GD700	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K		-25 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3 mm	8.38 mm	Not Qualified	262144 bit	3 V		e0				18.29 mm	70 ns
KM6161000LG-7L	Samsung	STANDARD SRAM			SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE							64KX16	64K				DUAL		R-PDSO-G					Not Qualified	1048576 bit								70 ns
KM658128ALG-12L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.0001 Amp	20.47 mm	120 ns
K6T0808V1D-GD70	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3 mm	8.38 mm	Not Qualified	262144 bit	3 V		e0				18.29 mm	70 ns
K6F1008V2M-GI700	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	3 V						20.47 mm	70 ns
K6X0808T1D-GF85	Samsung	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0					85 ns
K6T1008U2E-GF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0					70 ns
K6T1008C2E-GP700	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V					.000025 Amp	20.47 mm	70 ns
K6T1008V2C-GB100	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	3 V						20.47 mm	100 ns
K6T1008V2C-GF70	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	3 V						20.47 mm	70 ns
K6X0808C1D-GQ550	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	125 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V						18.29 mm	55 ns
KM658128LDSG-10L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.5		Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	8.38 mm	Not Qualified	1048576 bit	4.5 V		e0		YES	.00006 Amp	20.47 mm	100 ns
K6X1008T2D-BF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit				260				55 ns
KM62256DLG-4	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3				Not Qualified	262144 bit			e0			.00003 Amp		45 ns
K6L0908V2A-GD700	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K		-25 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	524288 bit	3 V						20.47 mm	70 ns
KM616V1000L-LG-7L-L	Samsung	STANDARD SRAM			SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE							64KX16	64K				DUAL		R-PDSO-G					Not Qualified	1048576 bit								70 ns
K6L1008V2C-GD10	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	3 V		e0				20.47 mm	100 ns
KM62256DLG-10	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3				Not Qualified	262144 bit			e0			.00003 Amp		100 ns
K6T4008U1B-GF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	3 mm	11.43 mm	Not Qualified	4194304 bit	2.7 V						20.47 mm	85 ns
K6T0808U1D-GB70T	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0					70 ns
KM62U256DLGI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.3 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V		e0			.000005 Amp	18.29 mm	70 ns
K6T1008C2E-GQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V					.000025 Amp	20.47 mm	70 ns
K6T4008C1C-GB55T00	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm	11.43 mm		4194304 bit	4.5 V						20.47 mm	55 ns
K6X4008C1F-BQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32					Not Qualified	4194304 bit						.00003 Amp		70 ns
K6X1008C2D-GF700	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V					.00001 Amp	20.47 mm	70 ns
KM62256BLG-12L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.00001 Amp	18.29 mm	120 ns
K6X1008C2D-BB550	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32	2	5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V					.00001 Amp	20.47 mm	55 ns
K6X4008T1F-GQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	2.7 V		e0			.00003 Amp	20.47 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.