SOP SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

K6X4008T1F-GF850

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3

3/3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

DUAL

R-PDSO-G32

1

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

2.7 V

.00001 Amp

20.47 mm

85 ns

K6X0808C1D-BF55T

Samsung

STANDARD SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

1

Not Qualified

262144 bit

e3

225

.00001 Amp

55 ns

KM62256CLGI-LU

Samsung

STANDARD SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

3/5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

262144 bit

e0

.00002 Amp

120 ns

KM62V256CLT-85L

Samsung

STANDARD SRAM

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

32KX8

32K

DUAL

R-PDSO-G

Not Qualified

262144 bit

85 ns

K6T1008C2C-GB55T

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

e0

55 ns

K6X4008C1F-GF70

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

240

.000012 Amp

20.47 mm

70 ns

KM6264BLG-10L

Samsung

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

DUAL

1

R-PDSO-G28

5.5 V

3 mm

8.38 mm

Not Qualified

65536 bit

4.5 V

YES

.000005 Amp

18.29 mm

100 ns

K6X1008T2D-GQ70T

Samsung

STANDARD SRAM

AUTOMOTIVE

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3/3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

125 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000025 Amp

70 ns

K6L0908C2A-GL55

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

64KX8

64K

0 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

524288 bit

4.5 V

20.47 mm

55 ns

K6T4008C1B-GL700

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

20.47 mm

70 ns

K6X0808C1D-GF70T

Samsung

STANDARD SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

DUAL

R-PDSO-G28

1

Not Qualified

262144 bit

.00001 Amp

70 ns

K6X4008C1F-BB70T

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

DUAL

R-PDSO-G32

Not Qualified

4194304 bit

.000012 Amp

70 ns

K6X4008C1F-BQ550

Samsung

STANDARD SRAM

AUTOMOTIVE

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

125 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00003 Amp

20.47 mm

55 ns

K6X0808C1D-BF55

Samsung

STANDARD SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

1

5.5 V

3 mm

8.38 mm

Not Qualified

262144 bit

4.5 V

e3

.00001 Amp

18.29 mm

55 ns

KM658128AG-10

Samsung

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.001 Amp

20.47 mm

100 ns

K6T1008C2E-GF700

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

30

240

.00001 Amp

20.47 mm

70 ns

K6X4008T1F-BQ700

Samsung

STANDARD SRAM

AUTOMOTIVE

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3

3/3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

125 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

TIN BISMUTH

DUAL

R-PDSO-G32

3

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

2.7 V

e6

.00003 Amp

20.47 mm

70 ns

K6T1008U2E-GB100

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

3.3 V

3 mm

11.43 mm

Not Qualified

1048576 bit

2.7 V

20.47 mm

100 ns

K6X4008T1F-BB550

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

TIN BISMUTH

DUAL

R-PDSO-G32

3

3.6 V

3 mm

11.43 mm

Not Qualified

4194304 bit

3 V

e6

.00001 Amp

20.47 mm

55 ns

K6T1008C2E-GP55T

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000025 Amp

55 ns

K6X0808C1D-BF70

Samsung

STANDARD SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

1

Not Qualified

262144 bit

e3

.00001 Amp

70 ns

KM62256CLG-LU

Samsung

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

3/5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

262144 bit

e0

.00001 Amp

100 ns

K6X4008C1F-BB700

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

DUAL

R-PDSO-G32

2

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

.000012 Amp

20.47 mm

70 ns

K6X4008T1F-GF55T

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

DUAL

R-PDSO-G32

1

Not Qualified

4194304 bit

.00001 Amp

55 ns

K6X1008C2D-BQ700

Samsung

STANDARD SRAM

AUTOMOTIVE

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

125 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.000025 Amp

20.47 mm

70 ns

K6T0808U1D-GD85T

Samsung

STANDARD SRAM

OTHER

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

32768 words

COMMON

3

3

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

262144 bit

e0

85 ns

K6L1008U2C-GF10T

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

3

3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

e0

100 ns

K6F1008S2M-GI15

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

2.5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

3.3 V

3 mm

11.43 mm

Not Qualified

1048576 bit

2.3 V

20.47 mm

150 ns

KM62V256CLG-10L

Samsung

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

3.6 V

3 mm

8.38 mm

Not Qualified

262144 bit

3 V

e0

YES

.000008 Amp

18.29 mm

100 ns

K6X4008T1F-GB85

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3/3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

Not Qualified

4194304 bit

e0

.00001 Amp

85 ns

KM658128ALG-12

Samsung

PSEUDO STATIC RAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.0002 Amp

20.47 mm

120 ns

K6L1008V2C-GF10

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

3 mm

11.43 mm

Not Qualified

1048576 bit

3 V

e0

20.47 mm

100 ns

KM6264BLG-7L

Samsung

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

DUAL

1

R-PDSO-G28

5.5 V

3 mm

8.38 mm

Not Qualified

65536 bit

4.5 V

YES

.000005 Amp

18.29 mm

70 ns

K6L0908C2A-GB550

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

64KX8

64K

0 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

524288 bit

4.5 V

20.47 mm

55 ns

K6T0808C1D-GB70T

Samsung

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

262144 bit

e0

70 ns

KM62256BLG-12

Samsung

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

5.5 V

3 mm

8.38 mm

Not Qualified

262144 bit

4.5 V

e0

YES

.00005 Amp

18.29 mm

120 ns

K6X1008T2D-GQ850

Samsung

STANDARD SRAM

AUTOMOTIVE

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3

3/3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

125 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

1

3.6 V

3 mm

11.43 mm

Not Qualified

1048576 bit

2.7 V

.000025 Amp

20.47 mm

85 ns

K6F1008S2M-GI120

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

2.5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

3.3 V

3 mm

11.43 mm

Not Qualified

1048576 bit

2.3 V

20.47 mm

120 ns

K6X4008T1F-BQ85T

Samsung

STANDARD SRAM

AUTOMOTIVE

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3/3.3

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

125 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

1

Not Qualified

4194304 bit

e3

.00003 Amp

85 ns

K6T1008U2C-GD10

Samsung

STANDARD SRAM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-25 Cel

DUAL

R-PDSO-G32

3.3 V

3 mm

11.43 mm

Not Qualified

1048576 bit

2.7 V

20.47 mm

100 ns

KM658128DLG-12L

Samsung

STANDARD SRAM

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

128KX8

128K

DUAL

R-PDSO-G32

3 mm

11.43 mm

Not Qualified

1048576 bit

20.47 mm

120 ns

K6T4008C1C-GL70

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

20.47 mm

70 ns

K6T1008C2E-GB700

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

R-PDSO-G32

1

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

.00001 Amp

20.47 mm

70 ns

K6X4008C1F-BQ700

Samsung

STANDARD SRAM

AUTOMOTIVE

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

125 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00003 Amp

20.47 mm

70 ns

KM62256ALG-10L

Samsung

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

5.5 V

3 mm

8.38 mm

Not Qualified

262144 bit

4.5 V

BATTERY BACKUP

e0

YES

.00002 Amp

18.29 mm

100 ns

K6T1008C2C-GL55T

Samsung

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

e0

55 ns

K6T1008C2E-GF70

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

.00001 Amp

20.47 mm

70 ns

K6X0808C1D-GQ70

Samsung

STANDARD SRAM

AUTOMOTIVE

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

125 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

3 mm

8.38 mm

Not Qualified

262144 bit

4.5 V

e0

.000025 Amp

18.29 mm

70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.