TFBGA SRAM 1,321

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
K6F1016S4A-FI700	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48	2.7 V	1.2 mm	6 mm	Not Qualified	1048576 bit	2.3 V				7 mm	70 ns
K6F8016R6M-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	2	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	2.2 V	1.2 mm	8 mm	Not Qualified	8388608 bit	1.65 V		e0		12 mm	85 ns
KM616V4002CF-20	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0	.01 Amp	9 mm	20 ns
K6F2016R4D-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48	2.2 V	1.2 mm	6 mm	Not Qualified	2097152 bit	1.65 V	IT CAN ALSO OPERATE AT 2V			7 mm	70 ns
KM616V1002CLFI-120	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V				7 mm	12 ns
K6F8008R2M-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM	R-PBGA-B48	2.2 V	1.2 mm	8 mm	Not Qualified	8388608 bit	1.65 V				12 mm	85 ns
K6F2016R4D-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48	2.2 V	1.2 mm	6 mm	Not Qualified	2097152 bit	1.65 V	IT CAN ALSO OPERATE AT 2V			7 mm	85 ns
KM6161002CIZ-12	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM	R-PBGA-B48	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V				7 mm	12 ns
K6F1016S4B-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48	2.7 V	1.2 mm	6 mm	Not Qualified	1048576 bit	2.3 V				7 mm	85 ns
KM6164002CFE-150	Samsung	STANDARD SRAM	OTHER	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-25 Cel		BOTTOM	S-PBGA-B48	5.5 V	1.2 mm	9 mm	Not Qualified	4194304 bit	4.5 V				9 mm	15 ns
KM6164002CIF-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	S-PBGA-B48	5.5 V	1.2 mm	9 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS			9 mm	15 ns
KM616V1002CFI-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.005 Amp	7 mm	15 ns
KM616FU8110FI-5	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.7 V		e0	.000006 Amp	12 mm	55 ns
K6F4016U6D-FF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V		e0	.000003 Amp	8.5 mm	55 ns
K6F4008R2C-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	1.8	1.8/2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	2.2 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	1.65 V		e0		8.5 mm	85 ns
K6F1008S2A-FI100	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		2.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM	R-PBGA-B48	2.7 V	1.2 mm	6 mm	Not Qualified	1048576 bit	2.3 V				7 mm	100 ns
K6F8016U6M-FF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.7 V		e0	.000006 Amp	12 mm	55 ns
K6F4016V6C-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	3 V		e0	.000003 Amp	8.5 mm	70 ns
K6R1016V1C-FP12	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.0003 Amp	7 mm	20 ns
K6F8016S6M-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM	R-PBGA-B48	2.7 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.3 V				12 mm	85 ns
K6F8008U2M-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.7 V				12 mm	70 ns
K6F8016V6M-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	8 mm	Not Qualified	8388608 bit	3 V				12 mm	70 ns
KM616V1002CFI-20	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.005 Amp	7 mm	20 ns
KM616V1002CIF-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V				7 mm	10 ns
KM616V4002CIF-20	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS AND OUTPUTS			9 mm	20 ns
KM616V1002CLZ-12	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		64KX16	64K		0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS			7 mm	12 ns
KM616V4002CLIF-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS AND OUTPUTS			9 mm	15 ns
K6R1016C1C-FC12	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V		e0	.005 Amp	7 mm	12 ns
KM616V1002CF-15	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.005 Amp	7 mm	15 ns
KM616V4002CIF-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS AND OUTPUTS			9 mm	15 ns
K6R1016V1C-FI20	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.005 Amp	7 mm	20 ns
KM616V4002CLF-20	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0	.0007 Amp	9 mm	20 ns
K6F4016U6C-FF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	2.7 V		e0	.000003 Amp	8.5 mm	55 ns
K6F1016R4A-FI10	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	2.2 V	1.2 mm	6 mm	Not Qualified	1048576 bit	1.65 V		e0		7 mm	100 ns
KM616V1002CLZ-20	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		64KX16	64K		0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS			7 mm	20 ns
K6F2016U4D-FF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	2097152 bit	2.7 V				7 mm	55 ns
K6R1016C1C-FP12	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V		e0	.0003 Amp	7 mm	12 ns
KM6161002CLFI-12	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	5.5 V	1.2 mm	6 mm	Not Qualified	1048576 bit	4.5 V		e0	.0005 Amp	7 mm	12 ns
K6R1016V1C-FP10	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.0003 Amp	7 mm	10 ns
K6R1016V1C-FP20	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.0003 Amp	7 mm	20 ns
K6R1016V1C-FC20	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V		e0	.005 Amp	7 mm	20 ns
KM6164002CF-1500	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM	S-PBGA-B48	5.5 V	1.2 mm	9 mm	Not Qualified	4194304 bit	4.5 V				9 mm	15 ns
K6F4008S2C-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM	R-PBGA-B48	2.7 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	2.3 V				8.5 mm	70 ns
KM6164002CFI-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B48	5.5 V	1.2 mm	9 mm	Not Qualified	4194304 bit	4.5 V		e0	.01 Amp	9 mm	15 ns
KM6164002CLF-20	Samsung	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM	S-PBGA-B48	5.5 V	1.2 mm	9 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS			9 mm	20 ns
K6F4016R4C-FF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48	2.2 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	1.65 V				8.5 mm	85 ns
K6F4008U2D-FF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V				8.5 mm	55 ns
K6T2008S2A-FF85	Samsung	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		2.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM	R-PBGA-B36	2.7 V	1.2 mm	6 mm	Not Qualified	2097152 bit	2.3 V				7 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.