TSOP1 SRAM 1,820

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

HM62W8256BLTSI-8SL

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

3 V

11.8 mm

85 ns

UPD43256BGW-A12X-9JL-A

Renesas Electronics

STANDARD SRAM

OTHER

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

32768 words

COMMON

3.3

3.3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-25 Cel

TIN BISMUTH

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e6

11.8 mm

120 ns

RMLV3216AGSA-5S2

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

33554432 bit

2.7 V

55 ns

UPD448012GY-B70X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

524288 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.7 V

e0

18 mm

70 ns

UPD442012AGY-BC70X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX16

128K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.2 V

e0

16.4 mm

70 ns

HM62Y8128DLTI-12UL

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.3 V

18.4 mm

120 ns

71V256SA12PZG

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

90 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G28

3

3.6 V

Not Qualified

262144 bit

3 V

e3

NOT SPECIFIED

260

.002 Amp

12 ns

UPD442012LGY-B70X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX16

128K

2 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.7 V

e0

.000004 Amp

16.4 mm

70 ns

HM62V8256BLTSI-10

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.7 V

11.8 mm

100 ns

HM62Y8256BLTSI-12

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.3 V

11.8 mm

120 ns

UPD444012AGY-C85X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

262144 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.2 V

e0

18 mm

85 ns

UPD43256BGW-B12-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

TIN BISMUTH

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.2 V

e6

11.8 mm

85 ns

R1LP0108ESF-7SI#S0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

2

5.5 V

Not Qualified

1048576 bit

4.5 V

225

.000002 Amp

70 ns

UPD448010GY-C12X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

COMMON

2.5/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX8

1M

1 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

e0

16.4 mm

120 ns

UPD43256BGW-85L-9JL

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

11.8 mm

85 ns

RMLV1616AGSA-5U2

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

55 ns

RMLV1616AGSA-4U2

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

45 ns

RMLV1616AGSA-4U2#AA0

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

45 ns

RMLV1616AGSA-4U2#KA0

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

45 ns

RMLV1616AGSA-5U2#AA0

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

55 ns

HM62W8256BLTSI-8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

3 V

11.8 mm

85 ns

HM62V8256BLTSI-8SL

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.7 V

11.8 mm

85 ns

R1LP0108ESF-7SI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

DUAL

R-PDSO-G32

2

5.5 V

Not Qualified

1048576 bit

4.5 V

.000002 Amp

70 ns

HM62V9128LT-15L

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

9

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX9

128K

0 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1179648 bit

2.7 V

18.4 mm

150 ns

UPD43256BGW-85L-9JL-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

TIN BISMUTH

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e6

11.8 mm

85 ns

HM62W8256BLTS-7SL

Renesas Electronics

STANDARD SRAM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

256KX8

256K

-20 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

3 V

11.8 mm

70 ns

UPD444010AGY-C85X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

COMMON

2.2/3.6

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX8

512K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.2 V

e0

16.4 mm

85 ns

RMLV1616AGSA-5S2

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

52

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

.5 mm

85 Cel

1MX16

1M

2.7 V

-40 Cel

DUAL

1

R-PDSO-G52

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE ORGANISED AS 2M X 8

YES

.0003 Amp

18.4 mm

55 ns

R1LV1616HSA-5SI#S1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

ALSO ORGANISED AS 2MX8

YES

.000008 Amp

18.4 mm

55 ns

IDT71256SA25PZGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

11.8 mm

25 ns

HM62V16100LTI-4

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

18.4 mm

45 ns

71V256SA12PZGI

Renesas Electronics

CACHE SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

90 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

3 V

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G28

3

3.6 V

Not Qualified

262144 bit

3 V

e3

NOT SPECIFIED

260

.002 Amp

12 ns

UPD444010AGY-D10X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

COMMON

2/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX8

512K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

1.8 V

e0

16.4 mm

100 ns

M5M5256DVP-55LL

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

11.8 mm

55 ns

UPD448010GY-B85X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

COMMON

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX8

1M

1 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.7 V

e0

16.4 mm

85 ns

RMLV0816BGSA-4S2

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3.6 V

1.2 mm

12 mm

8388608 bit

2.7 V

IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS

YES

.00001 Amp

18.4 mm

45 ns

RMLV0408EGSA-4S2#AA1

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

.5 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

DUAL

1

R-PDSO-G32

3

3.6 V

1.2 mm

8 mm

4194304 bit

2.7 V

YES

.0003 Amp

11.8 mm

45 ns

UPD442012LGY-C12X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

3

2.2/3.6

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX16

128K

1.5 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.2 V

e0

.0000035 Amp

16.4 mm

120 ns

R1LP0108ESA-7SR#B0

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

R-PDSO-G32

2

5.5 V

Not Qualified

1048576 bit

4.5 V

.000002 Amp

70 ns

UPD448012GY-B10X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

524288 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.7 V

e0

18 mm

100 ns

UPD444012AGY-B10X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

262144 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.7 V

e0

18 mm

100 ns

R1LV1616HSA-4LI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

2

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

20

260

.000025 Amp

18.4 mm

45 ns

UPD448010GY-D10X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

COMMON

2/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX8

1M

1 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

1.8 V

e0

16.4 mm

100 ns

R1LP0108ESA-5SR#B0

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

R-PDSO-G32

2

5.5 V

Not Qualified

1048576 bit

4.5 V

.000002 Amp

55 ns

UPD431000AGZ-A12-KJH

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

3.3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

3 V

e0

.00001 Amp

18.4 mm

120 ns

UPD431000AGU-B15X-9JH

Renesas Electronics

STANDARD SRAM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

3.3

3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

.00002 Amp

11.8 mm

150 ns

UPD442012AGY-DD85X-MJH-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

15 mA

131072 words

COMMON

2

2

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX16

128K

1 V

-25 Cel

TIN BISMUTH

DUAL

R-PDSO-G48

2.2 V

1.2 mm

12 mm

Not Qualified

2097152 bit

1.8 V

e6

18 mm

85 ns

IDT71V256SA20PZG8

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

MATTE TIN

DUAL

1

R-PDSO-G28

3

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e3

YES

11.8 mm

20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.