TSOP1 SRAM 1,820

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT71256SA12PZG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260	YES	.015 Amp	11.8 mm	12 ns
UPD448010GY-C10X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON		2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel	3-STATE	1MX8	1M	1 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V		e0					16.4 mm	100 ns
HM62W9128LT-10L	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		9	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX9	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1179648 bit	3 V							18.4 mm	100 ns
UPD43256BGW-B15X-9JL	Renesas Electronics	STANDARD SRAM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V	BATTERY BACKUP	e0					11.8 mm	150 ns
UPD43256BGW-85X-9JL-A	Renesas Electronics	STANDARD SRAM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e6					11.8 mm	85 ns
UPD431000AGU-A10-9JH	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON		3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V		e0				.00001 Amp	11.8 mm	100 ns
IDT71256SA20PZG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	11.8 mm	20 ns
UPD43256BGW-A12-9JL-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46,32	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e6					11.8 mm	120 ns
UPD43256BGX-B10-EJA	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.6,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0				.00002 Amp	18.4 mm	85 ns
UPD444012AGY-B10X-MJH-A	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX16	256K	1 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.7 V		e6					18 mm	100 ns
UPD444010AGY-C70X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON		2.2/3.6	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	1 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.2 V		e0					16.4 mm	70 ns
K6X0808T1D-LF700	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V							11.8 mm	70 ns
K6L1008V2C-TD10	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V		e0					18.4 mm	100 ns
K6T0908V2B-TF10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	524288 bit	3 V		e0					18.4 mm	100 ns
KM62256CLTGI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	11.8 mm	70 ns
K6E0808C1E-TI15	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.46,20	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE I/O	e0				.002 Amp	11.8 mm	15 ns
K6E0808V1E-TI15	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V	TTL COMPATIBLE I/O	e0				.002 Amp	11.8 mm	15 ns
K6F1008S2M-TI150	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		2.5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.3 V							18.4 mm	150 ns
K6X1008T2D-TQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V						.000025 Amp	18.4 mm	70 ns
K6F2008S2M-TI150	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		2.5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.3 V							18.4 mm	150 ns
K6T0808U1D-TF70	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.3 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0					11.8 mm	70 ns
K6X4008T1F-LB550	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V		e6				.00001 Amp	11.8 mm	55 ns
K6T1008V2C-TD700	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-25 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V							18.4 mm	70 ns
K6T0908V2B-YF10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	524288 bit	3 V		e0					11.8 mm	100 ns
K6F2008V2E-YF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V		e0				.000002 Amp	11.8 mm	55 ns
K6L0908U2A-TB85	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	524288 bit	2.7 V		e0					18.4 mm	85 ns
K6X0808T1D-LB850	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V							11.8 mm	85 ns
K6T1008U2C-YD10	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-25 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V							11.8 mm	100 ns
K6T0908V2B-TF100	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		64KX8	64K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	524288 bit	3 V							18.4 mm	100 ns
K6X1008C2D-TB70000	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V						.00001 Amp	18.4 mm	70 ns
K6T0808V1D-TF10	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e0					11.8 mm	100 ns
K6X1008T2D-TF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V						.000006 Amp	18.4 mm	85 ns
K6T1008C2C-YP700	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
K6T1008V2C-YB10	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V							11.8 mm	100 ns
K6X4008T1F-YQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	11.8 mm	85 ns
K6T0808V1D-TB100	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e0					11.8 mm	100 ns
K6T4008U1C-YB85	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V		e0					11.8 mm	85 ns
K6F2008V2M-TI85	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V							18.4 mm	85 ns
K6T0808U1D-TB85	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.3 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0					11.8 mm	85 ns
K6T0808U1D-TD850	Samsung	STANDARD SRAM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel		32KX8	32K		-25 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.3 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V		e0					11.8 mm	85 ns
K6T2008V2A-YB70	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	256KX8	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V		e0					11.8 mm	70 ns
KM62V256DLTG-7L	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e0				.000005 Amp	11.8 mm	70 ns
KM62256BLTG-8	Samsung	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	11.8 mm	85 ns
K6T2008U2A-YF85	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.7 V		e0					11.8 mm	85 ns
K6T4008V1C-TB70	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V		e0					18.4 mm	70 ns
K6X4008T1F-YB700	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V						.00001 Amp	11.8 mm	70 ns
K6F1616T6B-TF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.7 V	IT ALSO OPERATES AT 3.3V NOMINAL SUPPPLY	e0					18.4 mm	55 ns
K6X1008C2D-TQ55	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.