TSOP1 SRAM 1,820

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

K6T0808U1D-TB70

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

32768 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

3.3 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.7 V

e0

11.8 mm

70 ns

K6F2008U2E-YF700

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.7 V

11.8 mm

70 ns

K6L0908V2A-TD85

Samsung

STANDARD SRAM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

65536 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

2 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

524288 bit

3 V

e0

18.4 mm

85 ns

K6T0908V2B-TB100

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

64KX8

64K

0 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

524288 bit

3 V

18.4 mm

100 ns

K6T1008C2E-TB550

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

30

240

.00001 Amp

18.4 mm

55 ns

K6T1008V2E-YB10

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

3 V

e0

11.8 mm

100 ns

KM62U256CLTGE-8L

Samsung

STANDARD SRAM

OTHER

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

32768 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-25 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

3.3 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.7 V

e0

YES

.00001 Amp

11.8 mm

85 ns

K6T2008U2A-TF10

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX8

256K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.7 V

e0

18.4 mm

100 ns

K6T0808U1D-TD70

Samsung

STANDARD SRAM

OTHER

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

32768 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G28

3.3 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.7 V

e0

11.8 mm

70 ns

K6F1008S2M-TC150

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.3 V

18.4 mm

150 ns

K6E0808V1C-TC17

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

TTL COMPATIBLE I/O

e0

.0001 Amp

11.8 mm

17 ns

K6X1008T2D-PB550

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN BISMUTH

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

3 V

e6

.000006 Amp

18.4 mm

55 ns

K6E0808V1E-TL15

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

TTL COMPATIBLE I/O

e0

.0005 Amp

11.8 mm

15 ns

K6L0908C2A-TB55

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

64KX8

64K

0 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

524288 bit

4.5 V

18.4 mm

55 ns

K6T0808C1D-TB700

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

11.8 mm

70 ns

KM62256BLT-85L

Samsung

STANDARD SRAM

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

32KX8

32K

DUAL

R-PDSO-G32

1.2 mm

8 mm

Not Qualified

262144 bit

12.4 mm

85 ns

K6T0808U1D-TF100

Samsung

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3

8

SMALL OUTLINE, THIN PROFILE

.55 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

3.3 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.7 V

e0

11.8 mm

100 ns

K6L0908U2A-YF85

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

65536 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

524288 bit

2.7 V

e0

11.8 mm

85 ns

K6L0908C2A-TF70

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

64KX8

64K

-40 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

524288 bit

4.5 V

18.4 mm

70 ns

K6T2008V2M-TB85

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

262144 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

256KX8

256K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

3 V

e0

18.4 mm

85 ns

K6F2008V2E-LF700

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

TIN BISMUTH

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

3 V

e6

11.8 mm

70 ns

K6T1008V2C-TD10

Samsung

STANDARD SRAM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-25 Cel

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

3 V

18.4 mm

100 ns

K6T1008U2C-TF10

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

18.4 mm

100 ns

K6T4008S1C-TF10

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G32

2.7 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.3 V

18.4 mm

100 ns

K6T1008S2E-TF100

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

2.7 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.3 V

18.4 mm

100 ns

K6F1616T6B-TF550

Samsung

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.7 V

18.4 mm

55 ns

K6T1008U2E-TB700

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

18.4 mm

70 ns

K6X1008T2D-TQ70

Samsung

STANDARD SRAM

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

125 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

18.4 mm

70 ns

KM62256CLTGE-7

Samsung

STANDARD SRAM

OTHER

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-25 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

YES

.00005 Amp

11.8 mm

70 ns

K6T2008V2M-TB70

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

262144 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

70 Cel

3-STATE

256KX8

256K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

2097152 bit

3 V

e0

18.4 mm

70 ns

K6X0808C1D-LQ700

Samsung

STANDARD SRAM

AUTOMOTIVE

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

125 Cel

32KX8

32K

-40 Cel

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

11.8 mm

70 ns

K6F2008S2M-TC120

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

256KX8

256K

0 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.3 V

18.4 mm

120 ns

KM62U256CLTGI-8L

Samsung

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

32768 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

3.3 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.7 V

e0

YES

.00001 Amp

11.8 mm

85 ns

K6L1008U2C-YF85

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

11.8 mm

85 ns

K6L1008U2C-YB10

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

11.8 mm

100 ns

K6L0908V2A-YF70

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

65536 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

524288 bit

3 V

e0

11.8 mm

70 ns

K6T2008S2M-YF15

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G32

2.7 V

1.2 mm

8 mm

Not Qualified

2097152 bit

2.3 V

11.8 mm

150 ns

K6E0808C1E-TL10

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE I/O

e0

.0005 Amp

11.8 mm

10 ns

KM62V256DLTG-7L0

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDSO-G28

3.6 V

1.2 mm

8 mm

262144 bit

3 V

11.8 mm

70 ns

K6T1008U2E-YF70

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

e0

11.8 mm

70 ns

K6T1008U2C-TF850

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

18.4 mm

85 ns

KM62256BLT-10L

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

YES

.00001 Amp

12.4 mm

100 ns

K6E0808C1E-TL15

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.46,20

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE I/O

e0

.0005 Amp

11.8 mm

15 ns

K6L0908U2A-TF85

Samsung

STANDARD SRAM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

65536 words

COMMON

3

3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

524288 bit

2.7 V

e0

18.4 mm

85 ns

KM62256CLTG-5

Samsung

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

YES

.00005 Amp

11.8 mm

55 ns

K6L0908V2A-YD85

Samsung

STANDARD SRAM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

65536 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

2 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

524288 bit

3 V

e0

11.8 mm

85 ns

KM62256DLTGI-7L

Samsung

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e0

.000003 Amp

11.8 mm

70 ns

K6T1008U2C-TB85

Samsung

STANDARD SRAM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

1048576 bit

2.7 V

18.4 mm

85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.