RECTANGULAR SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1021BN-15VXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.015 Amp	28.575 mm	15 ns
CY7C1061AV33-10ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	2 V	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e3	20	260		.05 Amp	22.415 mm	10 ns
DS1245Y-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T32	1	5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		120 ns
DS1245Y-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e3				.0006 Amp		120 ns
IDT71V256SA15PZGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	11.8 mm	15 ns
K6R4016V1D-UI10T	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN BISMUTH	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e6		260		.005 Amp	18.41 mm	10 ns
R1RP0416DSB-2PR#D1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE					70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-G44	3	5.5 V					4194304 bit	4.5 V								12 ns
23K256-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	IN-LINE	DIP8,.3		SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	262144 bit	2.7 V		e3			NO	.000004 Amp	9.271 mm
23K640-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.9 mm
48L640-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	COMMON			8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm		65536 bit	2.7 V		e3			NO	.0002 Amp	4.9 mm
71024S15TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	15 ns
71V416S10PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	10 ns
74F189SJ	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE				1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G16		5.5 V	2.108 mm		5.3085 mm		64 bit	4.5 V							10.11 mm	27 ns
CY14V101QS-BK108XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1					8 mm
CY14V101QS-BK108XQ	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words		3		8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		6 mm		1048576 bit	2.7 V		e1		260			8 mm
CY62167EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	16777216 bit	1.65 V		e1	20	260		.00001 Amp	8 mm	55 ns
CY62168EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V		e1	20	260		.00001 Amp	8 mm	45 ns
CY7C1049G30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V							18.415 mm	10 ns
HM1-6561B/883	Intersil	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	7.2 mA	256 words		5		4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T18		5.5 V	5.08 mm		7.62 mm	Not Qualified	1024 bit	4.5 V		e0				.00001 Amp		220 ns
HM628512BLFP-7	Renesas Electronics	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	-20 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.3 mm	Not Qualified	4194304 bit	4.5 V	LG-MAX					.00002 Amp	20.95 mm	70 ns
IDT71016S15PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	15 ns
IDT71V016SA20PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.01 Amp	18.41 mm	20 ns
IDT71V424S10PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	10 ns
IDT71V67603S133PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	4.2 ns
IDT71V67803S133PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.07 Amp	20 mm	4.2 ns
IS62WV102416EBLL-45BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words	COMMON	3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1	30	260		.000065 Amp	8 mm	45 ns
M5M51008DVP-70H	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	TSSOP32,.8,20		SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	70 ns
RMWV3216AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		33554432 bit	2.7 V		e1			YES	.000032 Amp	8.5 mm	55 ns
SN74ALS870DW	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE	SOP24,.4		Other Memory ICs	1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15.4 mm	17 ns
STK15C88-NF45	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4		SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	45 ns
STK15C88-NF45I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4		SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	45 ns
7130LA100CB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm		15.24 mm	Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp	60.96 mm	100 ns
71V124SA15TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	15 ns
CY14B108L-ZS45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	40	260		.01 Amp	18.415 mm	45 ns
DS1225Y-150-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		150 ns
DS1225Y-150IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		8	MICROELECTRONIC ASSEMBLY				2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-XDMA-P28		5.5 V	10.668 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED			38.227 mm	150 ns
DS1225Y-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6		SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		150 ns
IDT71016S12PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	18.41 mm	12 ns
IDT71V016SA15PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e3	30	260		.01 Amp	18.41 mm	15 ns
IS62WV102416DBLL-45TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.2 V						.000025 Amp	18.4 mm	45 ns
M48Z02-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
N64S830HAS22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.3 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	65536 bit	2.5 V		e3	30	260		.000004 Amp	4.9 mm
R1LV0408DSP-5SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3		8	SMALL OUTLINE	SOP32,.56			1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	2	3.6 V	3.05 mm		11.4 mm		4194304 bit	2.7 V					YES	.0003 Amp	20.75 mm	55 ns
RMLV1616AGBG-5S2#AC0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3		16	GRID ARRAY	BGA48,6X8,30	8		.75 mm	85 Cel		1MX16	1M	2.7 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		16777216 bit	2.7 V	CAN ALSO BE ORGANISED AS 2M X 8				YES	.0003 Amp	8.5 mm	55 ns
23K640T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.9 mm
48L640T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	COMMON			8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm		65536 bit	2.7 V		e3			NO	.0002 Amp	4.9 mm
71V124SA12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	30	260		.01 Amp	20.955 mm	12 ns
APS1604M-3SQR-SN	Ap Memory Technology	PSEUDO STATIC RAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	7 mA	2097152 words		3.3		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		2MX8	2M		-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm	133 MHz	3.9 mm		16777216 bit	2.7 V					NO	.00015 Amp	4.9 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.