COMMERCIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1069AV33-12ZC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	2097152 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	3 V	TIN LEAD	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e0				.05 Amp	22.415 mm	12 ns
CY7C109B-35VC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32		5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.01 Amp	20.955 mm	35 ns
CY7C122-15PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256	4.5 V	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T22		5.5 V	5.08 mm		10.16 mm	Not Qualified	1024 bit	4.5 V		e0			YES	.09 Amp	28.067 mm	15 ns
CY7C128-35PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T24		5.5 V	4.826 mm		7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	30.099 mm	35 ns
CY7C128A-45PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	TIN LEAD	DUAL	1	R-PDIP-T24	1	5.5 V	4.826 mm		7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	31.75 mm	45 ns
CY7C131-55JCT	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	Tin/Lead (Sn/Pb)	QUAD	2	S-PQCC-J52	1	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0	30	225	YES	.015 Amp	19.1262 mm	55 ns
CY7C1313KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	440 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.25 Amp	15 mm	.45 ns
CY7C1315KV18-333BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		512KX36	512K		TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		18874368 bit	1.7 V	BURST ARCHITECTURE	e1		260			15 mm
CY7C131E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ		SRAMs	.65 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	8192 bit	4.5 V		e3		260		.015 Amp	10 mm	25 ns
CY7C1350-100AC	Cypress Semiconductor	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V		e0				.03 Amp	20 mm	5 ns
CY7C136-55NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ		SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	Matte Tin (Sn)	QUAD	2	S-PQFP-G52	3	5.5 V	2.45 mm		10 mm	Not Qualified	16384 bit	4.5 V		e3	20	260		.015 Amp	10 mm	55 ns
CY7C136E-25JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V		e3	30	260		.015 Amp	19.1262 mm	25 ns
CY7C1370KV33-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX36	512K		PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260			20 mm	3 ns
CY7C1383C-100AC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	TIN LEAD	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.07 Amp	20 mm	8.5 ns
CY7C1413KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.26 Amp	15 mm	.45 ns
CY7C1440AV33-167AXC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	375 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	1MX36	1M	3.14 V	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260			20 mm	3.4 ns
CY7C1440AV33-167BZC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0					17 mm	3.4 ns
CY7C144AV-25AXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	8192 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	70 Cel	3-STATE	8KX8	8K	2 V	NICKEL PALLADIUM GOLD	QUAD	2	S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e4	20	260		.00005 Amp	14 mm	25 ns
CY7C1472V25-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	2.5	1.8/2.5,2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	4MX18	4M	2.38 V	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3 ns
CY7C1480BV25-200BZC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	2.375 V	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V		e0		220	YES	.12 Amp	17 mm	3 ns
CY7C1480BV33-200AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260			20 mm	3 ns
CY7C150-10SCR	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1024 words		5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1KX4	1K			DUAL	1	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified	4096 bit	4.5 V					YES		15.4 mm	10 ns
CY7C1518KV18-250BZXC	Cypress Semiconductor	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1525KV18-250BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	640 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e1	20	260			15 mm	.45 ns
CY7C15632KV18-450BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	780 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.34 Amp	15 mm	.45 ns
CY7C1570KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	970 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.38 Amp	15 mm	.45 ns
CY7C1618KV18-333BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	8388608 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.41 Amp	17 mm	.45 ns
CY7C1620KV18-250BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	660 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX36	4M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.37 Amp	17 mm	.45 ns
CY7C1668KV18-450BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		8MX18	8M		TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C1670KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX36	4M		TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		15 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C167A-15PC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE				2.54 mm	70 Cel		16KX1	16K		TIN LEAD	DUAL		R-PDIP-T20		5.5 V	4.826 mm		7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					25.527 mm	15 ns
CY7C195-12VCT	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE				1.27 mm	70 Cel		64KX4	64K		TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					17.907 mm	12 ns
CY7C195-25VCT	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE				1.27 mm	70 Cel		64KX4	64K		TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					17.907 mm	25 ns
CY7C199-12VC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					17.907 mm	12 ns
CY7C199-20ZC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					11.8 mm	20 ns
CY7C199-35PC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.826 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					35.4965 mm	35 ns
CY7C2265KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1210 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.36 Amp	15 mm	.45 ns
CY7C2270KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	890 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.36 Amp	15 mm	.45 ns
CY7C25652KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1310 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.38 Amp	15 mm	.45 ns
CY7C2642KV18-333BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C4042KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG				1 mm	70 Cel		2MX36	2M		TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4121KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG				1 mm	70 Cel		8MX18	8M		TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4122KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG				1 mm	70 Cel		8MX18	8M		TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CYM1641HD-35C	Cypress Semiconductor	SRAM MODULE	COMMERCIAL	48	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1800 mA	1048576 words	COMMON	5	5	4	MICROELECTRONIC ASSEMBLY	DIP48,.9	8	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T48		5.5 V				Not Qualified	4194304 bit	4.5 V	CONFIGURABLE AS 256K X 16	e0			NO	.32 Amp		35 ns
CYM1851PZ-20C	Cypress Semiconductor	SRAM MODULE	COMMERCIAL	72	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	1048576 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP72/76,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	4.5 V	TIN LEAD	ZIG-ZAG	1	R-PZMA-T72		5.5 V				Not Qualified	33554432 bit	4.5 V	CONFIGURABLE AS 1M X 32	e0			YES	.08 Amp		20 ns
D2141L-3	Intel	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18						Not Qualified	4096 bit			e0						150 ns
D2142-2	Intel	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			4	IN-LINE	DIP20,.3		SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20						Not Qualified	4096 bit			e0						200 ns
DM7489N	National Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16 words		5	5	4	IN-LINE	DIP16,.3		SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	16X4	16		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified				e0

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.