Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP22,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T22 |
Not Qualified |
65536 bit |
e0 |
.015 Amp |
35 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
36 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
2097152 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP36,.6 |
SRAMs |
2.54 mm |
70 Cel |
2MX8 |
2M |
0 Cel |
DUAL |
R-XDMA-T36 |
5.5 V |
9.53 mm |
18.415 mm |
Not Qualified |
16777216 bit |
4.5 V |
5 YEARS OF DATA RETENTION |
NOT SPECIFIED |
NOT SPECIFIED |
.017 Amp |
52.96 mm |
70 ns |
||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
0 Cel |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.01 Amp |
20 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
3.1 mm |
11.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
WD-MAX; SEATED HGT-CAL |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
20.7 mm |
85 ns |
|||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
IN-LINE |
2.54 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
64 bit |
4.5 V |
19.305 mm |
27 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX4 |
1K |
0 Cel |
DUAL |
R-XDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
SEPARATE |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX1 |
1K |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
650 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X1 |
256 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
65 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX4 |
1K |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
4.5 V |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDSO-G24 |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
15.4 mm |
35 ns |
||||||||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-XDMA-T32 |
5.5 V |
Not Qualified |
2097152 bit |
4.75 V |
85 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
2.65 mm |
7.5 mm |
64 bit |
4.5 V |
10.3 mm |
27 ns |
|||||||||||||||||||||||||||
|
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
90 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDMA-P32 |
5.5 V |
Not Qualified |
4194304 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
70 ns |
|||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX4 |
1K |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||||
|
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
90 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDMA-P32 |
5.5 V |
Not Qualified |
4194304 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
85 ns |
|||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
75 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP20,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-XDIP-T20 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
450 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
4.5 V |
NO |
15.4 mm |
55 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
R-PDIP-T32 |
Not Qualified |
1048576 bit |
.00005 Amp |
85 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX4 |
1K |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
34 |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
S BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-XDMA-S34 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
70 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-XDMA-T32 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
120 ns |
||||||||||||||||||||||
Texas Instruments |
STATIC COLUMN DRAM |
COMMERCIAL |
18 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
1048576 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
1048576 bit |
150 ns |
||||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
IN-LINE |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-CDIP-T24 |
Not Qualified |
4096 bit |
35 ns |
||||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX4 |
1K |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
120 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
180 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
e0 |
55 ns |
|||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
34 |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
S BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-XDMA-S34 |
5.5 V |
Not Qualified |
4194304 bit |
4.75 V |
120 ns |
|||||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
|||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
115 mA |
524288 words |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T32 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.005 Amp |
85 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
0 Cel |
DUAL |
R-PDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
55 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
16384 bit |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
4.5 V |
0 Cel |
DUAL |
R-XDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
4.5 V |
NO |
15.4 mm |
35 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
R-PDIP-T28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
85 ns |
||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-XDMA-T32 |
5.5 V |
Not Qualified |
4194304 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
120 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-PDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
64 words |
8 |
IN-LINE |
DIP20,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
64X8 |
64 |
0 Cel |
DUAL |
R-PDIP-T20 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
650 ns |
|||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-XDIP-T18 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
|||||||||||||||||||||||
|
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
105 mA |
131072 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDMA-P32 |
5.5 V |
9.53 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
42.8 mm |
85 ns |
||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
75 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP20,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
2.4 V |
0 Cel |
DUAL |
R-PDIP-T20 |
Not Qualified |
4096 bit |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
|||||||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
200 mA |
262144 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
SRAMs |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDIP-T40 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.005 Amp |
85 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
16384 bit |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||||
|
Texas Instruments |
NON-VOLATILE SRAM MODULE |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
105 mA |
131072 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDMA-P32 |
5.5 V |
9.53 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
42.8 mm |
85 ns |
||||||||||||||||||
Texas Instruments |
NON-VOLATILE SRAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
115 mA |
524288 words |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDIP-T32 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.005 Amp |
120 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.