COMMERCIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C09089V-12AXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	205 mA	65536 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	3.14 V	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm	50 MHz	14 mm	Not Qualified	524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	40	260		.00025 Amp	14 mm	25 ns
CY7C1021BN-12ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.01 Amp	18.415 mm	12 ns
CY7C1024AV33-10AC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	131072 words	COMMON	3.3	3.3	24	FLATPACK	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX24	128K	3 V	TIN LEAD	QUAD		R-PQFP-G100	3	3.6 V	1.45 mm		14 mm	Not Qualified	3145728 bit	3 V		e0				.015 Amp	20 mm	10 ns
CY7C131-25JC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES	.015 Amp	19.1262 mm	25 ns
CY7C1329H-166AXC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	240 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	3.5 ns
CY7C1360C-166BZC	Infineon Technologies	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220		.04 Amp	15 mm	3.5 ns
CY7C1382C-200BZC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.2 mm	200 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.07 Amp	15 mm	3 ns
CY7C1399BN-12ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	3 V	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e4	30	260		.0005 Amp	11.8 mm	12 ns
CY7C146-25JC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; INTERRUPT FLAG	e0			YES	.015 Amp	19.1262 mm	25 ns
CY7C1460KV33-167BZC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX36	1M			BOTTOM		R-PBGA-B165		3.6 V	1.4 mm		15 mm		37748736 bit	3.135 V	PIPELINED ARCHITECTURE						17 mm
CY7C1463AV33-133AXC	Cypress Semiconductor	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	2MX18	2M	3.14 V	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260		.12 Amp	20 mm	6.5 ns
CY7C1480V33-200AXCT	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		2MX36	2M		MATTE TIN/NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3/e4					20 mm	3 ns
CY7C1665KV18-450BZXC	Cypress Semiconductor	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1290 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX36	4M	1.7 V		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V						.46 Amp	17 mm	.45 ns
CY7C192-25VC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	65536 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			NO	.015 Amp	17.907 mm	25 ns
CY7C4142KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CYD18S36V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	720 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.4 V	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	19 mm	11 ns
K6R4016C1D-TC10	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.005 Amp	18.41 mm	10 ns
K6T1008C2C-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V		DUAL		R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V							41.91 mm	70 ns
KM62256ALP-10	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	36.45 mm	100 ns
KM62256DLG-7L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0				.000003 Amp	18.29 mm	70 ns
KM681000BLG-7	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.47 mm	70 ns
LH5268A-10LL	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.2 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES		36 mm	100 ns
MB81C78A-45PSK	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K			DUAL	1	R-PDIP-T28		5.5 V	5.25 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN				YES		35.36 mm	45 ns
MB81C78A-45P-SK	Fujitsu	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0				.015 Amp		45 ns
MCM60L64P10	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES		36.83 mm	100 ns
MCM60L64P12	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES		36.83 mm	120 ns
TC551001APL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	2 V	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001APL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	2 V	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001BPL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K			DUAL		R-PDIP-T32		5.5 V	4.8 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V							42 mm	70 ns
TC5588P-20	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0				.001 Amp	34.9 mm	20 ns
21L02HPC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE	5		1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		TIN LEAD	DUAL		R-PDIP-T16	2A	5.5 V				Not Qualified	1024 bit	4.5 V		e0						250 ns
93L412PC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	256X4	256		TIN LEAD	DUAL		R-PDIP-T22	2A					Not Qualified	1024 bit			e0						60 ns
CY22E016L-SZ45XC	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		2KX8	2K		NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm		7.505 mm	Not Qualified	16384 bit	4.5 V		e4		260			17.905 mm	45 ns
CY62256L-70SNC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	1	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.00002 Amp	17.9324 mm	70 ns
CY62256LL-70PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.000005 Amp	36.322 mm	70 ns
CY62256LL-70ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel		32KX8	32K		MATTE TIN/NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3/e4					11.8 mm	70 ns
CY62256V-70SNCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V		DUAL	1	R-PDSO-G28		3.6 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	2.7 V	AUTOMATIC POWER-DOWN				YES		18.3896 mm	70 ns
CY6264-70SNCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	TIN LEAD	DUAL	1	R-PDSO-G28	1	5.5 V	2.794 mm		7.5057 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.015 Amp	17.9324 mm	70 ns
CY7C008-20AC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	265 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE	e0				.0015 Amp	14 mm	20 ns
CY7C008V-25AXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	65536 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	3 V	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e3	40	260		.00005 Amp	14 mm	25 ns
CY7C024AV-25AXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	4096 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	4KX16	4K	2 V	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V	FLOW-THROUGH	e3	40	260		.00005 Amp	14 mm	25 ns
CY7C09349A-12AC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	4096 words	COMMON	5	5	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	4KX18	4K	4.5 V	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G100		5.5 V	1.6 mm		14 mm	Not Qualified	73728 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0				.0005 Amp	14 mm	25 ns
CY7C1019B-15VCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-PDSO-J32	2	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					20.955 mm	15 ns
CY7C1019CV33-8VC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	TIN LEAD	DUAL		R-PDSO-J32	2	3.63 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e0				.005 Amp	20.955 mm	8 ns
CY7C1021BV33-10ZC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		64KX16	64K		TIN LEAD	DUAL		R-PDSO-G44		3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e0					18.41 mm	10 ns
CY7C1041BNV33L-15ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	2 V	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260		.00033 Amp	18.415 mm	15 ns
CY7C1041CV33-20ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K		TIN	DUAL		R-PDSO-G44		3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3					18.415 mm	20 ns
CY7C1069AV33-10ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	2097152 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	3 V	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTOMATIC POWER-DOWN	e3	20	260		.05 Amp	22.415 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.