INDUSTRIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY62167ELL-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3					Not Qualified	16777216 bit			e3	20	260				45 ns
CY62167GN30-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V			30	260			18.4 mm	45 ns
CY62256NLL-55ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e4	30	260		.00001 Amp	11.8 mm	55 ns
CY7C028V-20AI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V	AUTOMATIC POWER-DOWN	e0				.00005 Amp	14 mm	20 ns
CY7C1069G30-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260			8 mm	10 ns
CY7C1079DV33-12BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	4194304 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	4MX8	4M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY7C1079DV33-12BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	4194304 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	4MX8	4M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY7C1360C-166AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260		.04 Amp	20 mm	3.5 ns
DS1225Y-200IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6		SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		200 ns
DS1225Y-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		200 ns
DS1225Y-200IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6		SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-XDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.005 Amp		200 ns
IDT71024S15TYI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3	5.5 V	3.759 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	15 ns
IDT71V124SA10PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3.15 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	10 ns
IDT71V124SA12TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
IDT71V67703S75PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.07 Amp	20 mm	7.5 ns
IS66WVE4M16TBLL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	NO	3-STATE	4MX16	4M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V		e1	10	260	NO	.00015 Amp	8 mm	70 ns
709089L12PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	SYNCHRONOUS	305 mA	65536 words	COMMON	5	5	8	FLATPACK	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-F100	3	5.5 V	1.6 mm	50 MHz	14 mm	Not Qualified	524288 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240		.005 Amp	14 mm	12 ns
70V06L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK, LOW PROFILE				.8 mm	85 Cel			16KX8	16K		-40 Cel	Matte Tin (Sn)	QUAD		S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3	NOT SPECIFIED	260			14 mm	20 ns
71V3576S150PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.65 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-F100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp	20 mm	3.8 ns
71V3576S150PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp		3.8 ns
AS6C3216-55TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	2097152 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	2MX16	2M	1.2 V	-40 Cel		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	33554432 bit	2.7 V		e3/e6				.002 Amp	18.4 mm	55 ns
CY7C0832AV-133AI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16		SRAMs	.4 mm	85 Cel		3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G120	3	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.075 Amp	14 mm	4 ns
CY7C1021BN-15VXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.01 Amp	28.575 mm	15 ns
CY7C106D-10VXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44		SRAMs	1.27 mm	85 Cel		3-STATE	256KX4	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.003 Amp	18.415 mm	10 ns
CY7C106D-10VXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44		SRAMs	1.27 mm	85 Cel		3-STATE	256KX4	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4				.003 Amp	18.415 mm	10 ns
DS1270Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY					85 Cel			2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.5 V				Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION	e0						70 ns
DS1270Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2097152 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6		SRAMs	2.54 mm	85 Cel		3-STATE	2MX8	2M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDMA-P36		5.5 V				Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION PERIOD	e0			YES	.00015 Amp		70 ns
DS1270Y-70IND#	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE				2.54 mm	85 Cel			2MX8	2M		-40 Cel		DUAL		R-PDIP-P36		5.5 V	10.922 mm		15.24 mm	Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED			53.213 mm	70 ns
IDT70V24L25PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	4KX16	4K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	240		.0025 Amp	14 mm	25 ns
IDT7130LA100PFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.004 Amp	14 mm	100 ns
IDT7130LA100PI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm		15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	61.849 mm	100 ns
IDT71V3576S150PFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3			150 MHz		Not Qualified	4718592 bit			e3	30	260		.035 Amp		3.8 ns
IS61LV6416-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.63 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3.135 V		e1	10	260		.01 Amp	8 mm	10 ns
23A640T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.9 mm
23K640-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	IN-LINE	DIP8,.3		SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	65536 bit	2.7 V		e3			NO	.000004 Amp	9.271 mm
7008L20JI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	335 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC84,1.2SQ		SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J84	1	5.5 V	4.57 mm		29.3116 mm	Not Qualified	524288 bit	4.5 V		e0	30	225		.01 Amp	29.3116 mm	20 ns
7008L20JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	335 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC84,1.2SQ		SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J84	1	5.5 V	4.57 mm		29.3116 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	30	225		.01 Amp	29.3116 mm	20 ns
7008L20PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	335 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V		e0	20	240		.01 Amp	14 mm	20 ns
7008L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	335 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	20	240		.01 Amp	14 mm	20 ns
7008S55PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V		e0	20	240		.03 Amp	14 mm	55 ns
7008S55PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	65536 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	20	240		.03 Amp	14 mm	55 ns
70V27L15PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	FLATPACK					85 Cel			32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V								15 ns
70V3589S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
71024S12TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	12 ns
71024S20TYGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	20 ns
71V124SA15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	15 ns
CY62147EV30LL-45B2XAT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.000007 Amp		45 ns
CY7C1021BNL-15ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3					Not Qualified	1048576 bit			e4	20	260		.0005 Amp		15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.