Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
.01 Amp |
28.575 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.04 Amp |
20.995 mm |
12 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
300 mA |
2048 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQCC-N52 |
3 |
5.5 V |
4.572 mm |
19.1262 mm |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
NOT SPECIFIED |
260 |
19.1262 mm |
25 ns |
|||||||||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2KX16 |
2K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
20 |
240 |
.004 Amp |
14 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
220 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
32768 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
19.1262 mm |
25 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
30 |
240 |
.004 Amp |
14 mm |
25 ns |
||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
4.572 mm |
19.1262 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
20 |
225 |
.004 Amp |
19.1262 mm |
55 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.572 mm |
7.62 mm |
65536 bit |
4.5 V |
e3 |
260 |
34.671 mm |
19 ns |
||||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
260 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
95 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.045 Amp |
20 mm |
8 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.01 Amp |
18.41 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.01 Amp |
18.41 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
18.41 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
18.41 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
QFF |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
SYNCHRONOUS |
210 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-F100 |
3 |
3.465 V |
66 MHz |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH |
e3 |
30 |
260 |
.045 Amp |
5 ns |
|||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
165 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
270 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
GRID ARRAY, THIN PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B165 |
3 |
3.465 V |
1.2 mm |
100 MHz |
13 mm |
Not Qualified |
9437184 bit |
3.135 V |
e1 |
30 |
260 |
.06 Amp |
15 mm |
5 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
325 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
8 ns |
||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
48 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.75 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.34 mm |
6 mm |
Not Qualified |
1048576 bit |
3 V |
e3/e6 |
40 |
260 |
8 mm |
12 ns |
|||||||||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
48 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.4 mm |
6 mm |
16777216 bit |
2.7 V |
8 mm |
10 ns |
|||||||||||||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
160 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3/e6 |
.008 Amp |
18.415 mm |
12 ns |
|||||||||||||||
|
Alliance Memory |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3/e6 |
.008 Amp |
18.415 mm |
10 ns |
|||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
3 mA |
16 words |
5 |
5 |
16 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
85 Cel |
16X16 |
16 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T8 |
5.5 V |
5.33 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
260 |
.00003 Amp |
9.27 mm |
375 ns |
|||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
262144 words |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
e4 |
20 |
260 |
.005 Amp |
18.415 mm |
25 ns |
|||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
524288 words |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
8388608 bit |
2.7 V |
e3 |
20 |
260 |
.01 Amp |
22.415 mm |
25 ns |
|||||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.4 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.54 mm |
7.505 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
20 |
260 |
.0015 Amp |
20.726 mm |
35 ns |
|||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.997 mm |
11.303 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20 |
220 |
20.4465 mm |
70 ns |
|||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
524288 words |
COMMON |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
Not Qualified |
8388608 bit |
e4 |
20 |
260 |
.000004 Amp |
55 ns |
|||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
8388608 bit |
4.5 V |
e4 |
20 |
260 |
.000008 Amp |
18.415 mm |
45 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.0005 Amp |
18.415 mm |
15 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.19 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.003 Amp |
18.415 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.003 Amp |
18.415 mm |
10 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
262144 words |
COMMON |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
4194304 bit |
2.97 V |
e4 |
260 |
YES |
.01 Amp |
18.415 mm |
8 ns |
||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
530 mA |
2097152 words |
COMMON |
1.5/1.8,1.8 |
36 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
250 MHz |
Not Qualified |
75497472 bit |
.45 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
QDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1020 mA |
1048576 words |
SEPARATE |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
1 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
1.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
2 |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
450 MHz |
13 mm |
37748736 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e1 |
30 |
260 |
NO |
.33 Amp |
15 mm |
.45 ns |
|||||||||||
Dallas Semiconductor |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
85 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
.005 Amp |
70 ns |
||||||||||||||||||||||
Maxim Integrated |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
85 mA |
8192 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDMA-P28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
10 YEAR DATA RETENTION |
e0 |
.005 Amp |
70 ns |
|||||||||||||||||||||
|
Analog Devices |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
85 mA |
8192 words |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDIP-P28 |
5.5 V |
10.668 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
10 YEAR DATA RETENTION |
e3 |
.01 Amp |
38.227 mm |
70 ns |
|||||||||||||||||
Dallas Semiconductor |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
10 YEARS DATA RETENTION PERIOD |
e0 |
.005 Amp |
70 ns |
|||||||||||||||||||||
Maxim Integrated |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-XDMA-P28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.005 Amp |
70 ns |
||||||||||||||||||||||
|
Analog Devices |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-XDIP-P28 |
5.5 V |
9.4 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.0006 Amp |
38.227 mm |
70 ns |
||||||||||||||||||
Maxim Integrated |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
85 mA |
131072 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
DIP32,.6 |
SRAMs |
2.54 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-XDMA-T32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.005 Amp |
85 ns |
||||||||||||||||||||||
Ramtron International |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
7 mA |
32768 words |
3/5 |
8 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
Not Qualified |
262144 bit |
e0 |
240 |
.00015 Amp |
||||||||||||||||||||||||||||
|
Gsi Technology |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
2.5 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
QUAD |
R-PQFP-G100 |
2.7 V |
1.6 mm |
14 mm |
16777216 bit |
2.3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V |
NOT SPECIFIED |
NOT SPECIFIED |
20 mm |
7.5 ns |
|||||||||||||||||||||||
|
Gsi Technology |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
2.5 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
QUAD |
R-PQFP-G100 |
2.7 V |
1.6 mm |
14 mm |
16777216 bit |
2.3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V |
NOT SPECIFIED |
NOT SPECIFIED |
20 mm |
6.5 ns |
|||||||||||||||||||||||
|
Gsi Technology |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
2.5 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
QUAD |
R-PQFP-G100 |
2.7 V |
1.6 mm |
14 mm |
16777216 bit |
2.3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V |
NOT SPECIFIED |
NOT SPECIFIED |
20 mm |
5.5 ns |
|||||||||||||||||||||||
|
Gsi Technology |
CACHE SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
2.5 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
2MX36 |
2M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
2.7 V |
1.5 mm |
15 mm |
Not Qualified |
75497472 bit |
2.3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY |
e1 |
260 |
17 mm |
6.5 ns |
||||||||||||||||||||
|
Gsi Technology |
CACHE SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
2MX36 |
2M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
2 V |
1.4 mm |
15 mm |
Not Qualified |
75497472 bit |
1.7 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY |
e1 |
260 |
17 mm |
6.5 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.