INDUSTRIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT70V28L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.003 Amp	14 mm	20 ns
IDT70V659S12DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	515 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	4718592 bit	3.15 V		e3				.015 Amp	28 mm	12 ns
IDT71024S15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.955 mm	15 ns
IDT71256SA12YGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	12 ns
IDT71256SA12YGI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	12 ns
IDT71256SA15PZGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	11.8 mm	15 ns
IDT71256SA20PZGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260	YES	.015 Amp	11.8 mm	20 ns
IDT71256SA25PZGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	11.8 mm	25 ns
IDT71256SA25YI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.015 Amp	17.9324 mm	25 ns
IDT71V124SA10PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3.15 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	10 ns
IDT71V424S12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
IDT71V65603S133PFGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e3	30	260		.06 Amp	20 mm	4.2 ns
IDT71V67603S150PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.8 ns
IDT71V67603S150PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.8 ns
IDT71V67703S85BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	30	225		.07 Amp	15 mm	8.5 ns
IS61C6416AL-12KI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44	3	5.5 V	3.75 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0001 Amp	28.575 mm	12 ns
IS61WV102416BLL-10MI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V		e0	30	235		.02 Amp	11 mm	10 ns
IS61WV204816BLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		33554432 bit	2.4 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	10 ns
IS61WV204816BLL-10TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		33554432 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	10 ns
IS61WV25616BLL-10BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.009 Amp		10 ns
IS62WV102416FBLL-45BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm		16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	45 ns
IS62WV102416GBLL-45TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS62WV102416GBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS63LV1024L-12BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B36	3	3.45 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3.15 V		e1	10	260		.0015 Amp	10 mm	12 ns
IS66WV51216EBLL-70TLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		8388608 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	70 ns
IS66WVE4M16EBLL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
IS66WVS4M8ALL-104KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			1.27 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-XDSO-N8		1.95 V	.8 mm	104 MHz	5 mm		33554432 bit	1.65 V					NO	.0002 Amp	6 mm
IS66WVS4M8ALL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-PDSO-G8		1.95 V	1.75 mm	104 MHz	3.9 mm		33554432 bit	1.65 V					NO	.0002 Amp	4.9 mm
IS66WVS4M8ALL-104TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32			.8 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-XDSO-N8		1.95 V	.6 mm	104 MHz	3 mm		33554432 bit	1.65 V					NO	.0002 Amp	4 mm
IS66WVS4M8BLL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4MX8	4M	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	104 MHz	3.9 mm		33554432 bit	2.7 V					NO	.0002 Amp	4.9 mm
M5M51008DVP-70HIBT	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE					85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V					1048576 bit	4.5 V								70 ns
M5M51008DVP-70HIST	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
N25S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	262144 bit	1.7 V		e3	30	260		.0000005 Amp	4.9 mm
R1LV0816ASA-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words				16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G48	3	2.7 V	1.2 mm		12 mm		8388608 bit	2.4 V	ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE						18.4 mm	70 ns
R1LV1616RSA-7SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	2 V	-40 Cel		DUAL		R-PDSO-G48	2					Not Qualified	16777216 bit					260				70 ns
RMLV0816BGSB-4S2#AA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		8388608 bit	2.4 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS				YES	.00001 Amp	18.41 mm	45 ns
U632H64BD1K25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words		5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	37.1 mm	25 ns
U632H64BDK25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	34.7 mm	25 ns
U632H64BDK25G1	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	34.7 mm	25 ns
U632H64BDK45	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	34.7 mm	45 ns
U632H64BSK45G1	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	45 ns
23LC1024-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	IN-LINE	DIP8,.3		SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		5.5 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	1048576 bit	2.5 V		e3		260	NO	.00001 Amp	9.271 mm
7007L20PFGI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	315 mA	32768 words	COMMON	5	5	8	FLATPACK	PGA68,11X11		SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G80	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V		e3		260		.01 Amp	14 mm	20 ns
7027L20PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	335 mA	32768 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e3	30	260		.01 Amp	14 mm	20 ns
70V25S25PFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		8KX16	8K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm		131072 bit	3 V		e3		260			14 mm	25 ns
70V261L25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	20	240		.003 Amp	14 mm	25 ns
70V26L25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ		SRAMs	1.27 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J84	1	3.6 V	4.572 mm		29.2862 mm	Not Qualified	262144 bit	3 V		e0	30	225		.003 Amp	29.2862 mm	25 ns
70V27L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V		e0	20	240		.006 Amp	14 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.