INDUSTRIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY14B108L-ZS25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	40	260		.01 Amp	18.415 mm	25 ns
CY14B256LA-SP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	30	260		.005 Amp	15.875 mm	45 ns
CY14B512PA-SFXIT	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel		64KX8	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.336 mm		7.4925 mm	Not Qualified	524288 bit	2.7 V		e3				.00025 Amp	10.2865 mm
CY62128BLL-70SI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	1048576 bit	4.5 V		e0	20	220			20.4465 mm	70 ns
CY62167EV30LL-45BVXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V		e1	20	260			8 mm	45 ns
CY7C1019DV33-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	3.6 V	3.75 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C1021BN-15ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY7C1021BN-15ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY7C1021D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	28.575 mm	10 ns
CY7C1041BV33-15ZI	Rochester Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0					18.41 mm	15 ns
CY7C1041BV33-15ZIT	Rochester Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	15 ns
CY7C1041BV33-20ZIT	Rochester Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V							18.41 mm	20 ns
CY7C1041DV33-10BVI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	8 mm	10 ns
CY7C1041DV33-10BVIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	8 mm	10 ns
CY7C1071DV33-12BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	250 mA	2097152 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V		e1		260		.05 Amp	9.5 mm	12 ns
CY7C109D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C1380KV33-167AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	163 mA	524288 words	COMMON	3.3		36	FLATPACK, LOW PROFILE	QFP100,.63X.87			.65 mm	85 Cel	3-STATE	512KX36	512K	3.135 V	-40 Cel	PURE TIN	QUAD	1	R-PQFP-G100	3	3.63 V	1.6 mm	167 MHz	14 mm		18874368 bit	3.135 V	PIPE LINED ARCHITECTURE			260	YES	.08 Amp	20 mm	3.4 ns
DS1220AD-200IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	15 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V				Not Qualified	16384 bit	4.5 V		e0	40	260		.005 Amp		200 ns
DS1220AD-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	2048 words		5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V		e0				.005 Amp		200 ns
DS1220AD-200IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V		e3	30	260		.01 Amp		200 ns
DS1250Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	85 Cel	3-STATE	512KX8	512K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDIP-T32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0			YES	.005 Amp		70 ns
DS1250Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		70 ns
DS1250Y-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3				.0006 Amp		70 ns
GS74116AGP-8I	Gsi Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	PURE MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V				260		.02 Amp	18.41 mm	8 ns
GS84018CGB-150I	Gsi Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY				1.27 mm	85 Cel		256KX18	256K		-40 Cel		BOTTOM		R-PBGA-B119		2.7 V	1.99 mm		14 mm		4718592 bit	2.3 V	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		NOT SPECIFIED	NOT SPECIFIED			22 mm
GS8642Z18B-250IV	Gsi Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY				1.27 mm	85 Cel		4MX18	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2 V	1.99 mm		14 mm	Not Qualified	75497472 bit	1.7 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	e0					22 mm	6.5 ns
IDT7027S25PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	524288 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE	e0	20	240	YES	.03 Amp	14 mm	25 ns
IDT70V09L20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e3					14 mm	20 ns
IDT70V26L25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	16	CHIP CARRIER	LDCC84,1.2SQ		SRAMs	1.27 mm	85 Cel	3-STATE	16KX16	16K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQCC-J84	1	3.6 V	4.572 mm		29.2862 mm	Not Qualified	262144 bit	3 V		e0	30	225		.003 Amp	29.2862 mm	25 ns
IDT70V28L20PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.003 Amp	14 mm	20 ns
IDT70V28L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3 V		e0	20	240		.003 Amp	14 mm	20 ns
IDT70V3579S5BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e1	30	260			17 mm	5 ns
IDT70V3589S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V35L20PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	195 mA	8192 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	8KX18	8K	3 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	147456 bit	3 V		e0	20	240		.005 Amp	14 mm	20 ns
IDT70V658S12BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	515 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V		e0	20	225		.015 Amp	17 mm	12 ns
IDT70V7319S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	675 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,50		SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V7519S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	675 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	133 MHz	15 mm	Not Qualified	9437184 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V9269L12PRFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		16KX16	16K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					20 mm	25 ns
IDT70V9279L12PRFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		32KX16	32K		-40 Cel	TIN LEAD	QUAD		R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e0					20 mm	12 ns
IDT71024S15TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	5.5 V	3.759 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260		.01 Amp	20.96 mm	15 ns
IDT71024S15TYI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	15 ns
IDT71256L20YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J28	3					Not Qualified	262144 bit			e3	40	260		.00012 Amp		20 ns
IDT71256L35YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.00012 Amp	17.9324 mm	35 ns
IDT71256L35YI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.0002 Amp	17.9324 mm	35 ns
IDT7130LA25JI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e0	20	225		.004 Amp	19.1262 mm	25 ns
IDT7130LA25TFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.004 Amp	10 mm	25 ns
IDT71321SA55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.03 Amp	19.1262 mm	55 ns
IDT71342LA25PFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.01 Amp	14 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.