INDUSTRIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
71V424L10YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-J36	3	3.6 V				Not Qualified	4194304 bit	3 V		e3	30	260	.01 Amp		10 ns
71V424L12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	.01 Amp	18.41 mm	12 ns
71V424L15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	.01 Amp	23.5 mm	15 ns
71V424S12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-J36	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	.02 Amp	23.495 mm	12 ns
71V424S15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	.02 Amp	18.41 mm	15 ns
71V424S15PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	.02 Amp	18.41 mm	15 ns
71V546S133PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e3	30	260	.045 Amp		4.2 ns
71V547S80PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-F100	3	3.465 V		95 MHz		Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH	e3	30	260	.045 Amp		5 ns
71V65603S100BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	270 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.06 Amp	22 mm	5 ns
71V65603S133BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e1	30	260	.06 Amp	22 mm	4.2 ns
71V65603S133BQGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e1	30	260	.06 Amp	15 mm	4.2 ns
71V65603S133PFGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e3	30	260	.06 Amp	20 mm	4.2 ns
71V65603S150BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	345 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.06 Amp	22 mm	3.8 ns
71V65603S150BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	345 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.06 Amp	22 mm	3.8 ns
71V65603S150PFGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	345 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.06 Amp	20 mm	3.8 ns
71V65703S85BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	90 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225	.06 Amp	22 mm	8.5 ns
71V65703S85BQI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3			90 MHz		Not Qualified	9437184 bit			e0		225	.06 Amp		8.5 ns
71V65803S100BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	270 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e1	30	260	.06 Amp	22 mm	5 ns
71V65803S150BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	345 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.06 Amp	22 mm	3.8 ns
71V65803S150BQI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	345 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e0	NOT SPECIFIED	225	.06 Amp	15 mm	3.8 ns
71V65803S150PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	345 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e3	30	260	.06 Amp	20 mm	3.8 ns
71V67603S133BGGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.07 Amp	22 mm	4.2 ns
71V67603S133BGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.07 Amp	22 mm	4.2 ns
71V67603S133BQGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260	.07 Amp	15 mm	4.2 ns
71V67603S133BQI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		225	.07 Amp	15 mm	4.2 ns
71V67603S150BQI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	150 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0		225	.07 Amp	15 mm	3.8 ns
71V67603S166PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm		9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3		260		20 mm	3.5 ns
71V67703S75BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	22 mm	7.5 ns
71V67703S75BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	117 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	15 mm	7.5 ns
71V67703S80BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	22 mm	8 ns
71V67703S80BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	15 mm	8 ns
71V67703S80BQI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	NOT SPECIFIED	225	.07 Amp	15 mm	8 ns
71V67703S85BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	22 mm	8.5 ns
71V67703S85BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	22 mm	8.5 ns
71V67703S85BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	15 mm	8.5 ns
71V67703S85BQGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.07 Amp	15 mm	8.5 ns
71V67703S85BQI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	NOT SPECIFIED	225	.07 Amp	15 mm	8.5 ns
71V67703S85PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel	Matte Tin (Sn)	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm		9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	NOT SPECIFIED	260		20 mm	8.5 ns
71V67803S133PFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	280 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.07 Amp	20 mm	4.2 ns
71V67803S150PFGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	325 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.07 Amp	20 mm	3.8 ns
71V67803S150PFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	325 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.07 Amp	20 mm	3.8 ns
71V67903S75PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	285 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260	.07 Amp	20 mm	7.5 ns
71V67903S80BQI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	NOT SPECIFIED	225	.07 Amp	15 mm	8 ns
71V67903S85BQI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	NOT SPECIFIED	225	.07 Amp	15 mm	8.5 ns
71V67903S85PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	210 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	87 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260	.07 Amp	20 mm	8.5 ns
AS6C1008-55TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel		DUAL	R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V			40	260		18.4 mm	55 ns
AS7C34096A-12JINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL	R-PDSO-J36	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	3 V		e3/e6				23.495 mm	12 ns
CY14B108L-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	40	260	.01 Amp	18.415 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.