OTHER SRAM 1,787

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KM6164002CTE-12	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e0		.01 Amp	18.41 mm	12 ns
KM62256CLRGE-7	Samsung	STANDARD SRAM	OTHER	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	e0	YES	.00005 Amp	11.8 mm	70 ns
K6L1008V2C-YB10T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	1048576 bit		e0				100 ns
KM62V256DLGE-7L0	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-25 Cel		DUAL		R-PDSO-G28	3.6 V	3 mm	8.38 mm		262144 bit	3 V				18.29 mm	70 ns
KM62U256DLGE-7L	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.3 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V	e0		.000005 Amp	18.29 mm	70 ns
K6L0908V2A-GD70	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.43 mm	Not Qualified	524288 bit	3 V	e0			20.47 mm	70 ns
K6T0808U1D-RD85T	Samsung	STANDARD SRAM	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28				Not Qualified	262144 bit		e0				85 ns
K6L1008V2C-GD70	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	3 V	e0			20.47 mm	70 ns
K6L0908V2A-GD10	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.43 mm	Not Qualified	524288 bit	3 V	e0			20.47 mm	100 ns
K6T0808U1D-GD850	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.3 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V	e0			18.29 mm	85 ns
KM644002AEJ-15	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel			1MX4	1M		-25 Cel		DUAL		R-PDSO-J32	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V				20.96 mm	15 ns
K6T1008U2C-ND100	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			128KX8	128K		-25 Cel		DUAL		R-PDSO-G32	3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V				11.8 mm	100 ns
KM6164002JE-20	Samsung	STANDARD SRAM	OTHER	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44				Not Qualified	4194304 bit		e0		.01 Amp		20 ns
K6L0908V2A-GD850	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			64KX8	64K		-25 Cel		DUAL		R-PDSO-G32	3.6 V	3 mm	11.43 mm	Not Qualified	524288 bit	3 V				20.47 mm	85 ns
K6L0908V2A-GD85	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.43 mm	Not Qualified	524288 bit	3 V	e0			20.47 mm	85 ns
K6T0808U1D-GD70	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.3 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V	e0			18.29 mm	70 ns
K6T0808U1D-TD10	Samsung	STANDARD SRAM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.3 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V	e0			11.8 mm	100 ns
K6L0908V2A-GD10T	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	524288 bit		e0				100 ns
K6L1008V2C-ND70	Samsung	STANDARD SRAM	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V	e0			11.8 mm	70 ns
KM62U256DLGE-7L0	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-25 Cel		DUAL		R-PDSO-G28	3.3 V	3 mm	8.38 mm		262144 bit	2.7 V				18.29 mm	70 ns
K6L1008U2C-GD85	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.3 V	3 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V	e0			20.47 mm	85 ns
KM616U1000BLRE-10	Samsung	STANDARD SRAM	OTHER	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	64KX16	64K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	3.3 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	2.7 V	e0	YES	.00005 Amp	18.41 mm	100 ns
KM62256CLGE-7L	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V	e0	YES	.000025 Amp	18.29 mm	70 ns
K6T1008V2C-TD70	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-25 Cel		DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V				18.4 mm	70 ns
KM616V1000BLTE-10L	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V	e0	YES	.00002 Amp	18.41 mm	100 ns
K6T0808V1D-RD100	Samsung	STANDARD SRAM	OTHER	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel			32KX8	32K		-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V	e0			11.8 mm	100 ns
K6T0808V1D-RD10	Samsung	STANDARD SRAM	OTHER	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V	e0			11.8 mm	100 ns
K6L1008V2C-YD10T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	1048576 bit		e0				100 ns
K6T0808U1D-GD100	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.3 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V	e0			18.29 mm	100 ns
K6L1008U2C-TD85	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V	e0			18.4 mm	85 ns
K6L0908V2A-GD70T	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	524288 bit		e0				70 ns
KM62V256DLGE-7L	Samsung	STANDARD SRAM	OTHER	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	3 mm	8.38 mm	Not Qualified	262144 bit	3 V	e0		.000005 Amp	18.29 mm	70 ns
K6T1008V2C-GD10	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			128KX8	128K		-25 Cel		DUAL		R-PDSO-G32	3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	3 V				20.47 mm	100 ns
K6L0908U2A-GD10	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.3 V	3 mm	11.43 mm	Not Qualified	524288 bit	2.7 V	e0			20.47 mm	100 ns
K6T1008V2C-ND700	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			128KX8	128K		-25 Cel		DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V				11.8 mm	70 ns
K6L1008V2C-GD70T	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	1048576 bit		e0				70 ns
KM616V1000BLRE-10	Samsung	STANDARD SRAM	OTHER	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	YES	3-STATE	64KX16	64K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V	e0	YES	.00005 Amp	18.41 mm	100 ns
K6T1008U2C-ND850	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			128KX8	128K		-25 Cel		DUAL		R-PDSO-G32	3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V				11.8 mm	85 ns
K6L0908U2A-YD85	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.3 V	1.2 mm	8 mm	Not Qualified	524288 bit	2.7 V	e0			11.8 mm	85 ns
K6L0908V2A-YD10T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32				Not Qualified	524288 bit		e0				100 ns
K6T1008U2C-YD100	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			128KX8	128K		-25 Cel		DUAL		R-PDSO-G32	3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V				11.8 mm	100 ns
KM644002CJE-15	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	1MX4	1M	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-J32	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e0		.01 Amp	20.96 mm	15 ns
K1S1616B5M-EE700	Samsung	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-25 Cel		BOTTOM		R-PBGA-B48	2.2 V	1 mm		Not Qualified	16777216 bit	1.7 V					70 ns
KM62256CLTGE-10	Samsung	STANDARD SRAM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V	e0	YES	.00005 Amp	11.8 mm	100 ns
KM6164002CJE-10	Samsung	STANDARD SRAM	OTHER	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-J44	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e0		.01 Amp	28.58 mm	10 ns
K4W2G1646E-BC1A0	Samsung	DDR SRAM	OTHER	96	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		134217728 words		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			128MX16	128M		0 Cel		BOTTOM		R-PBGA-B96	1.575 V	1.2 mm	7.5 mm		2147483648 bit	1.425 V				13.3 mm
KM644002AJE-15	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	1MX4	1M	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-J32	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e0		.01 Amp	20.96 mm	15 ns
K6L0908V2A-YD700	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			64KX8	64K		-25 Cel		DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	524288 bit	3 V				11.8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.