OTHER SRAM 1,787

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

DS1995L-F5

Maxim Integrated

NON-VOLATILE SRAM

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

16384 words

5

1

DISK BUTTON

70 Cel

16KX1

16K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

16384 bit

2.8 V

e0

NOT SPECIFIED

NOT SPECIFIED

DS1995L-F5+

Analog Devices

NON-VOLATILE SRAM

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

16384 words

5

1

DISK BUTTON

70 Cel

16KX1

16K

-40 Cel

Matte Tin (Sn) - annealed

END

O-MEDB-N2

6 V

Not Qualified

16384 bit

2.8 V

e3

UPD431000AGZ-70X-KJH-A

Renesas Electronics

STANDARD SRAM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-25 Cel

TIN BISMUTH

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e6

.00002 Amp

18.4 mm

70 ns

HM628512BLFP-7

Renesas Electronics

STANDARD SRAM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

-20 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.3 mm

Not Qualified

4194304 bit

4.5 V

LG-MAX

.00002 Amp

20.95 mm

70 ns

HM628512BLFP-7SL

Renesas Electronics

STANDARD SRAM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

-20 Cel

DUAL

R-PDSO-G32

5.5 V

3 mm

11.3 mm

Not Qualified

4194304 bit

4.5 V

LG-MAX

.00001 Amp

20.95 mm

70 ns

MT45W8MW16BGX-708WTTR

Micron Technology

PSEUDO STATIC RAM

OTHER

54

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

8MX16

8M

-30 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B54

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

e1

260

10 mm

70 ns

MT45W4MW16BCGB-708LWT

Micron Technology

PSEUDO STATIC RAM

OTHER

54

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

30 mA

4194304 words

COMMON

1.8

1.8,1.8/3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA54,6X9,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

4MX16

4M

-30 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B54

1.95 V

1 mm

6 mm

Not Qualified

67108864 bit

1.7 V

e1

.00012 Amp

8 mm

70 ns

MT45W8MW16BGX-856WT

Micron Technology

PSEUDO STATIC RAM

OTHER

54

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

25 mA

8388608 words

COMMON

1.8

1.8,1.8/3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA54,6X9,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

8MX16

8M

-30 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B54

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

e1

260

.0002 Amp

10 mm

85 ns

TC5514AP-3

Toshiba

STANDARD SRAM

OTHER

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX4

1K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

4096 bit

e0

.00002 Amp

300 ns

TC5517APL-2

Toshiba

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

16384 bit

e0

.000001 Amp

200 ns

TMS100500JD

Texas Instruments

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

CERAMIC

NO

ECL100K

-4.5 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

SEPARATE

-4.5

1

IN-LINE

DIP24,.4

SRAMs

2.54 mm

85 Cel

OPEN-EMITTER

256KX1

256K

0 Cel

DUAL

R-XDIP-T24

Not Qualified

262144 bit

10 ns

SN10144JE

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

-5.2 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

256 words

-5.2

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

256X1

256

0 Cel

DUAL

R-XDIP-T16

Not Qualified

35 ns

SN10148JE

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

103 mA

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

0 Cel

DUAL

R-XDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

15 ns

TMS4000NC

Texas Instruments

CONTENT ADDRESSABLE SRAM

OTHER

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

16 words

8

IN-LINE

DIP40,.6

SRAMs

2.54 mm

85 Cel

16X8

16

-25 Cel

DUAL

R-PDIP-T40

Not Qualified

SN10147J

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

128 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

128X1

128

0 Cel

DUAL

R-XDIP-T16

Not Qualified

15 ns

TMS4000JC

Texas Instruments

CONTENT ADDRESSABLE SRAM

OTHER

40

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16 words

8

IN-LINE

DIP40,.6

SRAMs

2.54 mm

85 Cel

16X8

16

-25 Cel

DUAL

R-XDIP-T40

Not Qualified

TMS1101NC

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

3-STATE

256X1

256

-25 Cel

DUAL

R-PDIP-T16

Not Qualified

750 ns

54F219FLQB

Texas Instruments

STANDARD SRAM

OTHER

16

DFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

16 words

5

4

FLATPACK

1.27 mm

100 Cel

16X4

16

-55 Cel

DUAL

R-GDFP-F16

5.5 V

2.032 mm

6.604 mm

64 bit

4.5 V

9.6645 mm

32 ns

54F219LLQB

Texas Instruments

STANDARD SRAM

OTHER

20

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16 words

5

4

CHIP CARRIER

1.27 mm

100 Cel

16X4

16

-55 Cel

QUAD

S-CQCC-N20

5.5 V

1.905 mm

8.89 mm

64 bit

4.5 V

8.89 mm

32 ns

54F219DLQB

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

2.54 mm

100 Cel

16X4

16

-55 Cel

DUAL

R-GDIP-T16

5.5 V

5.08 mm

7.62 mm

64 bit

4.5 V

19.94 mm

32 ns

SN10147JE

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

128 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

128X1

128

0 Cel

DUAL

R-XDIP-T16

Not Qualified

15 ns

SN10147N

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

128 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

128X1

128

0 Cel

DUAL

R-PDIP-T16

Not Qualified

SN10142J

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

0 Cel

DUAL

R-XDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN10145JE

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

16X4

16

0 Cel

DUAL

R-XDIP-T16

Not Qualified

SN10144J

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

-5.2 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

256 words

-5.2

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

256X1

256

0 Cel

DUAL

R-XDIP-T16

Not Qualified

35 ns

54F219FL

Texas Instruments

STANDARD SRAM

OTHER

16

DFP

RECTANGULAR

CERAMIC, GLASS-SEALED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

16 words

5

4

FLATPACK

1.27 mm

100 Cel

16X4

16

-55 Cel

DUAL

R-GDFP-F16

5.5 V

2.032 mm

6.604 mm

64 bit

4.5 V

9.6645 mm

32 ns

SN10140J

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

0 Cel

DUAL

R-XDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TMS4003JR

Texas Instruments

STANDARD SRAM

OTHER

40

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

1

IN-LINE

DIP40,.6

SRAMs

2.54 mm

85 Cel

256X1

256

-55 Cel

DUAL

R-XDIP-T40

Not Qualified

SN10145J

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

16X4

16

0 Cel

DUAL

R-XDIP-T16

Not Qualified

SN10148J

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

103 mA

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

0 Cel

DUAL

R-XDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

15 ns

54F219DL

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

2.54 mm

100 Cel

16X4

16

-55 Cel

DUAL

R-GDIP-T16

5.5 V

5.08 mm

7.62 mm

64 bit

4.5 V

LG-MAX

19.94 mm

32 ns

SN10142JE

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

0 Cel

DUAL

R-XDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TMS1101JC

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

3-STATE

256X1

256

-25 Cel

DUAL

R-XDIP-T16

Not Qualified

750 ns

SN10140JE

Texas Instruments

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

0 Cel

DUAL

R-XDIP-T16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TMS4003NC

Texas Instruments

STANDARD SRAM

OTHER

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

1

IN-LINE

DIP40,.6

SRAMs

2.54 mm

85 Cel

256X1

256

-55 Cel

DUAL

R-PDIP-T40

Not Qualified

54F219LL

Texas Instruments

STANDARD SRAM

OTHER

20

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

16 words

5

4

CHIP CARRIER

1.27 mm

100 Cel

16X4

16

-55 Cel

QUAD

S-CQCC-N20

5.5 V

1.905 mm

8.89 mm

64 bit

4.5 V

8.89 mm

32 ns

DS1962L-F5

Analog Devices

NON-VOLATILE SRAM

OTHER

METAL

128 words

3/5

8

BUTTON,.68IN

SRAMs

70 Cel

128X8

128

-40 Cel

Not Qualified

1024 bit

LC361000AMLL-70X

Onsemi

STANDARD SRAM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-25 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000024 Amp

70 ns

LC3517B-10

Onsemi

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

2 V

-30 Cel

DUAL

R-PDIP-T24

Not Qualified

16384 bit

.00002 Amp

100 ns

LC361000ATLL-70X

Onsemi

STANDARD SRAM

OTHER

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-25 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000024 Amp

70 ns

LC361000ARLL-10X

Onsemi

STANDARD SRAM

OTHER

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

YES

3-STATE

128KX8

128K

2 V

-25 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000024 Amp

100 ns

LC361000ATLL-10X

Onsemi

STANDARD SRAM

OTHER

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-25 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000024 Amp

100 ns

LC361000AMLL-10X

Onsemi

STANDARD SRAM

OTHER

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-25 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000024 Amp

100 ns

LC361000ARLL-70X

Onsemi

STANDARD SRAM

OTHER

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

SRAMs

.5 mm

85 Cel

YES

3-STATE

128KX8

128K

2 V

-25 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.000024 Amp

70 ns

LC3517BL-10

Onsemi

STANDARD SRAM

OTHER

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

2 V

-30 Cel

DUAL

R-PDIP-T24

Not Qualified

16384 bit

.000001 Amp

100 ns

M69KB128AA70DW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

70 ns

M69KB128AA70CW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

70 ns

M69KB128AA85DW8

STMicroelectronics

PSEUDO STATIC RAM

OTHER

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

COMMON

1.8

1.8

16

UNCASED CHIP

WAFER

Other Memory ICs

85 Cel

3-STATE

8MX16

8M

-30 Cel

UPPER

X-XUUC-N

1.95 V

Not Qualified

134217728 bit

1.7 V

.0002 Amp

85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.