OTHER SRAM 1,787

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MCM69F536CTQ10	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	110 Cel	3-STATE	32KX36	32K	3.14 V	20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	14 mm	Not Qualified	1179648 bit	3.135 V	SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL	e0			YES	.05 Amp	20 mm	10 ns
MCM69F618CTQ10	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	110 Cel	3-STATE	64KX18	64K		20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	14 mm	Not Qualified	1179648 bit	3.135 V		e0			YES		20 mm	10 ns
MCM69F618CTQ9R	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	110 Cel	3-STATE	64KX18	64K		20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	14 mm	Not Qualified	1179648 bit	3.135 V		e0			YES		20 mm	9 ns
MCM69F536CTQ8.5	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	110 Cel	3-STATE	32KX36	32K	3.14 V	20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	14 mm	Not Qualified	1179648 bit	3.135 V	SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL	e0			YES	.055 Amp	20 mm	8.5 ns
MCM69F536CTQ9	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	110 Cel	3-STATE	32KX36	32K	3.14 V	20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.6 mm	14 mm	Not Qualified	1179648 bit	3.135 V	SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL	e0			YES	.055 Amp	20 mm	9 ns
HYE18P32160AF-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1					8 mm	85 ns
HYE18P32160AC-12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00009 Amp	8 mm	70 ns
HYE18P32160AC-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.00009 Amp	8 mm	85 ns
HYE18P32161AC-85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.000025 Amp	8 mm	85 ns
HYE18P16161AC-85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.000025 Amp	8 mm	85 ns
HYE18P128160AF-12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel		BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	134217728 bit	1.7 V						.00025 Amp	8 mm	9 ns
HYE18P32161AC-70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.000025 Amp	8 mm	70 ns
HYE18P16161AC-70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.000025 Amp	8 mm	70 ns
HYE18P16161AC-L85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.000025 Amp	8 mm	85 ns
HYE18P32161AC-L85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.000025 Amp	8 mm	85 ns
HYE18P32160AC-9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.00009 Amp	8 mm	70 ns
HYE18P16161AC-L70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0				.000025 Amp	8 mm	70 ns
HYE18P32160AC-L12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00012 Amp	8 mm	70 ns
HYE18P128160AF-9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	40 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	134217728 bit	1.7 V		e1				.00025 Amp	8 mm	7 ns
HYE18P32160AC-L9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00012 Amp	8 mm	70 ns
HYE18P32160AC-L15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00012 Amp	8 mm	85 ns
HYE18P32161AC-L70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.000025 Amp	8 mm	70 ns
HYE18P128160AF-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54	1.95 V	1 mm	6 mm	Not Qualified	134217728 bit	1.7 V		e1				.00025 Amp	8 mm	11 ns
SAB81C54-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16				Not Qualified	4096 bit			e0				.000001 Amp		150 ns
SAB81C50-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel		256X8	256		-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	2048 bit			e0				.000001 Amp		900 ns
SAB81C54-T	Infineon Technologies	STANDARD SRAM	OTHER	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDSO-G20				Not Qualified	4096 bit			e0				.000001 Amp		150 ns
SAB81C51-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel		256X8	256		-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	2048 bit			e0				.000001 Amp		900 ns
SAB81C54	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16				Not Qualified	4096 bit			e0				.000001 Amp		150 ns
TC5518BFL-25	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16384 bit			e0				.000001 Amp		250 ns
TC5514P-2	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	4096 bit			e0				.00002 Amp		800 ns
TC5517BFL-20	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC51WHM516AXGN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V							9 mm	65 ns
TC5516ADL	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	16384 bit			e0				.000001 Amp		250 ns
TC51WKM716AXBN75	Toshiba	PSEUDO STATIC RAM	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	8388608 words	COMMON	2.75	1.8,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	134217728 bit	2.6 V		e0				.000003 Amp	12 mm	75 ns
TC5516AF-2	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16384 bit			e0				.00003 Amp		200 ns
TC51WKM516AXGN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48	3.1 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V							9 mm	65 ns
TC5518BF-25	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16384 bit			e0				.00003 Amp		250 ns
TC5517BP-25	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit			e0				.00003 Amp		250 ns
TC51WHM616AXBN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED			11 mm	65 ns
TC5504ADL-3	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4096 bit			e0				.000001 Amp		300 ns
TC5516AD-2	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	16384 bit			e0				.00003 Amp		200 ns
TC51WHM516BXGN70	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON	2.75	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	7 mm	70 ns
TC5516ADL-2	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	16384 bit			e0				.000001 Amp		200 ns
TC51W3217XB	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-20 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3.1 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V		e0					9 mm	25 ns
TC5517AP	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit			e0				.00003 Amp		250 ns
TC5517BF-20	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16384 bit			e0				.00003 Amp		200 ns
TC5517BFL-25	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16384 bit			e0				.000001 Amp		250 ns
TC51WKM616AXGN75	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	COMMON	2.75	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.6 V		e1				.000005 Amp	11 mm	75 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.