OTHER SRAM 1,787

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TC5517BF	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16384 bit			e0			.00003 Amp		200 ns
TC51W6417XB-80	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	2.75	2.7/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	67108864 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	9 mm	80 ns
TC5517ADL	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		250 ns
TC51WHM516AXBN70	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON	2.75	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	7 mm	70 ns
TC5517BD-20	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	16384 bit			e0			.00003 Amp		200 ns
TC51WKM516AXBN75	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words	COMMON	2.75	1.8/2,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	7 mm	75 ns
TC51W6416XB-80	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	2.75	2.7/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	67108864 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	9 mm	80 ns
TC5501D	Toshiba	STANDARD SRAM	OTHER	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		256 words				4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	85 Cel	3-STATE	256X4	256		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T22				Not Qualified	1024 bit			e0			.00001 Amp		450 ns
TC5517BPL	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC5564P	Toshiba	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0			.00002 Amp		100 ns
TC5517BDL	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC5504AP-3	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18	5.5 V	5 mm	7.62 mm	Not Qualified	4096 bit	4.5 V	LG-MAX; IT IS ALSO OFFERED IN CERDIP PACKAGE	e0			.00002 Amp	22.8 mm	300 ns
TC5516AP-2	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.00003 Amp		200 ns
TC55V2377AFF-205	Toshiba	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		64KX36	64K		0 Cel		QUAD	R-PQFP-G100	3.5 V	1.7 mm	14 mm	Not Qualified	2359296 bit	3.1 V						20 mm	4.9 ns
TC5516APL-2	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC5517AF	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16384 bit			e0			.00003 Amp		250 ns
TC5518BF	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16384 bit			e0			.00003 Amp		200 ns
TC51WKM516BXGN75	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON	2.75	1.8/2,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	7 mm	75 ns
TC55V1664BFT-8	Toshiba	CACHE SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44	3.465 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3.135 V		e0			.002 Amp	18.41 mm	8 ns
TC5564PL-10	Toshiba	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0			.000001 Amp		100 ns
TC5518BP-25	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.00003 Amp		250 ns
TC5501P-1	Toshiba		OTHER	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE			2.54 mm	85 Cel		256X4	256		-30 Cel	TIN LEAD	DUAL	R-PDIP-T22	5.5 V	4.5 mm	10.16 mm		1024 bit	4.5 V	SEATED HGT CALCULATED	e0				27.6 mm	650 ns
TC5514P	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit			e0			.00002 Amp		450 ns
TC5504AD-3	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit			e0			.00002 Amp		300 ns
TC5516AFL-2	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC5517BFL	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC5564P-1	Toshiba	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0			.00002 Amp		150 ns
TC5514ADL-3	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit			e0			.000001 Amp		300 ns
TC5518BPL-25	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		250 ns
TC51WKM616BXGN75	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	COMMON	2.75	1.8/2,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	11 mm	75 ns
TC51WHM616AXGN70	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	4194304 words	COMMON	2.75	2.7/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.6 V		e1			.000005 Amp	11 mm	70 ns
TC51W3216XB	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON	2.75	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.1 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V		e0			.000005 Amp	9 mm	25 ns
TC5518BPL-20	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC51W3217XB-85	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		9 mm	85 ns
TC51W6416XB-85	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	2.75	2.7/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	67108864 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	9 mm	85 ns
TC5518BFL-20	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC5564PL-20	Toshiba	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0			.000001 Amp		200 ns
TC5504P-2	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit			e0			.00002 Amp		800 ns
TC55V2377AFF-250	Toshiba	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		64KX36	64K		0 Cel		QUAD	R-PQFP-G100	3.5 V	1.7 mm	14 mm	Not Qualified	2359296 bit	3.1 V						20 mm	3.9 ns
TC5514P-1	Toshiba	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit			e0			.00002 Amp		650 ns
TC5517BPL-20	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns
TC5517BP	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24				Not Qualified	16384 bit			e0			.00003 Amp		200 ns
TC5518BF-20	Toshiba	STANDARD SRAM	OTHER	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.5	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24				Not Qualified	16384 bit			e0			.00003 Amp		200 ns
TC51W3216XB-80	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		9 mm	80 ns
TC51W3216XB-85	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		9 mm	85 ns
TC5047AP-2	Toshiba	STANDARD SRAM	OTHER	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20				Not Qualified	4096 bit			e0					800 ns
TC51W3217XB-80	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		9 mm	80 ns
TC5518BDL	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	16384 bit			e0			.000001 Amp		200 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.