Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
ECL100K |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP28,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
4KX4 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
16384 bit |
e0 |
7 ns |
||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
20 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
ECL |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
240 mA |
16384 words |
SEPARATE |
-4.5 |
1 |
IN-LINE |
DIP20,.3 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
16KX1 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-CDIP-T20 |
Not Qualified |
16384 bit |
e0 |
15 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
ECL |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
QFL24,.4SQ |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-CQFP-F24 |
Not Qualified |
4096 bit |
e0 |
10 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
ECL |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
220 mA |
256 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
QFL24,.4SQ |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
256X4 |
256 |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-CQFP-F24 |
Not Qualified |
1024 bit |
e0 |
7 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
250 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP24,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
4096 bit |
e0 |
7 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
ECL100K |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP28,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
4KX4 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
16384 bit |
e0 |
10 ns |
||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
ECL |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP28,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
4KX4 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-CDIP-T28 |
Not Qualified |
16384 bit |
e0 |
5 ns |
||||||||||||||||||||||||
Renesas Electronics |
LATE-WRITE SRAM |
OTHER |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
550 mA |
1048576 words |
COMMON |
2.5 |
1.5,2.5 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B119 |
2.63 V |
2.18 mm |
300 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.38 V |
e0 |
240 |
.15 Amp |
22 mm |
1.6 ns |
||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP24,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
TIN LEAD |
DUAL |
R-XDIP-T24 |
Not Qualified |
4096 bit |
e0 |
7 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QFF |
SQUARE |
CERAMIC |
YES |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
450 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
QFL24,.4SQ |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-XQFP-F24 |
Not Qualified |
4096 bit |
e0 |
6 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
ECL100K |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
4KX4 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
16384 bit |
e0 |
7 ns |
||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
ECL |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
450 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
QFL24,.4SQ |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-CQFP-F24 |
Not Qualified |
4096 bit |
e0 |
6 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QFF |
SQUARE |
CERAMIC |
YES |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
250 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
QFL24,.4SQ |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-XQFP-F24 |
Not Qualified |
4096 bit |
e0 |
5 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
ECL |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP24,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-CDIP-T24 |
Not Qualified |
4096 bit |
e0 |
8 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
262144 words |
SEPARATE |
-4.5 |
1 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
256KX1 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
262144 bit |
e0 |
15 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
330 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP24,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
4096 bit |
e0 |
3 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
ECL |
-4.5 V |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
450 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
CHIP CARRIER |
LCC,24,CORNER PAD |
SRAMs |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-CQCC-N24 |
Not Qualified |
4096 bit |
e0 |
6 ns |
||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
DFP |
RECTANGULAR |
CERAMIC |
YES |
ECL100K |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
FL28,.4 |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
4KX4 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDFP-F28 |
Not Qualified |
16384 bit |
e0 |
5 ns |
||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QFF |
SQUARE |
CERAMIC |
YES |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
250 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
QFL24,.4SQ |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-XQFP-F24 |
Not Qualified |
4096 bit |
e0 |
7 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
ECL |
-4.5 V |
FLAT |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
FLATPACK |
QFL24,.4SQ |
SRAMs |
1.27 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-CQFP-F24 |
Not Qualified |
4096 bit |
e0 |
15 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
-4.5 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
SEPARATE |
-4.5 |
4 |
IN-LINE |
DIP24,.4 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
1KX4 |
1K |
0 Cel |
TIN LEAD |
DUAL |
R-XDIP-T24 |
Not Qualified |
4096 bit |
e0 |
8 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
100 ns |
|||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1 V |
-25 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.19 mm |
6 mm |
Not Qualified |
2097152 bit |
2.7 V |
.000002 Amp |
8 mm |
70 ns |
||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
36 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
3/3.3 |
8 |
GRID ARRAY |
BGA36,6X6,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
S-PBGA-B36 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
100 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
COMMON |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
16.4 mm |
55 ns |
|||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
2.2/3.6 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.5 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
100 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-20 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
3 mm |
11.3 mm |
Not Qualified |
4194304 bit |
3 V |
20.45 mm |
70 ns |
|||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
262144 words |
COMMON |
2 |
2 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
256KX8 |
256K |
1 V |
-25 Cel |
DUAL |
R-PDSO-G32 |
Not Qualified |
2097152 bit |
120 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
3.3 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-25 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e6 |
.00002 Amp |
18.4 mm |
150 ns |
|||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
-20 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.95 mm |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
60 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-20 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
LG-MAX |
.00001 Amp |
42.5 mm |
55 ns |
|||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
1048576 words |
COMMON |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
1 V |
-25 Cel |
TIN LEAD |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.3 V |
e0 |
16.4 mm |
70 ns |
||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
3.3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
128KX8 |
128K |
2 V |
-25 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
3 V |
e0 |
.00002 Amp |
11.8 mm |
120 ns |
||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
3 |
2.2/3.6 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
128KX16 |
128K |
1.5 V |
-25 Cel |
TIN LEAD |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
2097152 bit |
2.2 V |
e0 |
.0000035 Amp |
16.4 mm |
120 ns |
|||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
2/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
128KX8 |
128K |
1.5 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
150 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
3/3.3 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
100 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
45 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
e0 |
.0001 Amp |
70 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00002 Amp |
18.4 mm |
85 ns |
||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
YES |
3-STATE |
32KX8 |
32K |
2 V |
-25 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
BATTERY BACKUP |
e0 |
.00002 Amp |
11.8 mm |
100 ns |
||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
100 ns |
|||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
262144 words |
COMMON |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
1 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
2097152 bit |
2.2 V |
e0 |
11.8 mm |
85 ns |
||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY |
8 |
85 Cel |
1MX16 |
1M |
-20 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
Not Qualified |
16777216 bit |
2.7 V |
55 ns |
|||||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
3 |
2/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
128KX16 |
128K |
1.5 V |
-25 Cel |
TIN LEAD |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
2097152 bit |
1.8 V |
e0 |
.000003 Amp |
16.4 mm |
200 ns |
|||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
YES |
3-STATE |
512KX8 |
512K |
2 V |
-20 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
20.95 mm |
70 ns |
||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
524288 words |
COMMON |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
16.4 mm |
85 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1 V |
-25 Cel |
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.04 mm |
6 mm |
Not Qualified |
2097152 bit |
2.2 V |
e1 |
8 mm |
70 ns |
||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
-20 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
20.95 mm |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
524288 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.7 V |
e0 |
18 mm |
55 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.