OTHER SRAM 1,787

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TC5564P-15	Toshiba	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	65536 bit		e0			.00002 Amp		150 ns
TC5517BD	Toshiba	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	16384 bit		e0			.00003 Amp		200 ns
TC5508P-1	Toshiba	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		1024 words		5	5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX1	1K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16						Not Qualified	1024 bit		e0					550 ns
UPB100470D-15	Renesas Electronics	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	SEPARATE		-4.5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18						Not Qualified	4096 bit		e0					15 ns
UPB100480B-15	Renesas Electronics	STANDARD SRAM	OTHER	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	240 mA	16384 words	SEPARATE		-4.5	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20						Not Qualified	16384 bit		e0					15 ns
UPB100474AD-6	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0					6 ns
UPB10142D	Renesas Electronics	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel		64X1	64		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16						Not Qualified			e0
UPB100480D-10	Renesas Electronics	STANDARD SRAM	OTHER	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	SEPARATE		-4.5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T20						Not Qualified	16384 bit		e0					10 ns
UPD100500D-20	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	SEPARATE		-4.5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	256KX1	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	262144 bit		e0					20 ns
UPB100422B-10	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	256 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-CQFP-F24						Not Qualified	1024 bit		e0					10 ns
UPB100484B-15	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR	CERAMIC	YES		ECL100K	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	SEPARATE		-4.5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDFP-F28						Not Qualified	16384 bit		e0					15 ns
UPB100422D-7	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	256 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T24						Not Qualified	1024 bit		e0					7 ns
UPD2149D-1	Renesas Electronics	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K		-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18						Not Qualified	4096 bit		e0					45 ns
UPB100484B-10	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR	CERAMIC	YES		ECL100K	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	SEPARATE		-4.5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDFP-F28						Not Qualified	16384 bit		e0					10 ns
HM64YLB36512BP-28	Renesas Electronics	LATE-WRITE SRAM	OTHER	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119		2.63 V	2.24 mm	357 MHz	14 mm	Not Qualified	18874368 bit	2.38 V	e1			.15 Amp	22 mm	1.6 ns
UPB100484D-15	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	CERAMIC	NO		ECL100K	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	SEPARATE		-4.5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28						Not Qualified	16384 bit		e0					15 ns
UPB100422D-10	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	256 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T24						Not Qualified	1024 bit		e0					10 ns
UPD2149D-2	Renesas Electronics	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K		-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18						Not Qualified	4096 bit		e0					35 ns
UPB100474ABH-5	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC	YES			-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-XQFP-F24						Not Qualified	4096 bit		e0					5 ns
UPB100474EBH-3	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC	YES			-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	330 mA	1024 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-XQFP-F24						Not Qualified	4096 bit		e0					3 ns
UPB100474D-10	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T24						Not Qualified	4096 bit		e0					10 ns
UPB10148D	Renesas Electronics	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	CERAMIC	NO		ECL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel		64X1	64		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16						Not Qualified			e0
UPB100474AD-5	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0					5 ns
UPB100480B-10	Renesas Electronics	STANDARD SRAM	OTHER	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	SEPARATE		-4.5	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20						Not Qualified	16384 bit		e0					10 ns
UPB100A484B-5	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE		-4.5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F28						Not Qualified	16384 bit		e0					5 ns
UPB100A484B-7	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE		-4.5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F28						Not Qualified	16384 bit		e0					7 ns
UPB100474D-15	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T24						Not Qualified	4096 bit		e0					15 ns
100474S10D	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	TIN LEAD	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0					10 ns
UPB100474B-80	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC	YES			-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	450 mA	1024 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-XQFP-F24						Not Qualified	4096 bit		e0					8 ns
UPB100476LLDH-6	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	CERAMIC	NO		ECL100K	-4.5 V	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	350 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28						Not Qualified	4096 bit		e0					6 ns
UPB100470D-10	Renesas Electronics	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	SEPARATE		-4.5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18						Not Qualified	4096 bit		e0					10 ns
UPB100476LLBH-6	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR	CERAMIC	YES		ECL100K	-4.5 V	FLAT	PARALLEL	SYNCHRONOUS	350 mA	1024 words	SEPARATE		-4.5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDFP-F28						Not Qualified	4096 bit		e0					6 ns
HM64YLB36512BP-33	Renesas Electronics	LATE-WRITE SRAM	OTHER	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel		BOTTOM	R-PBGA-B119	3	2.63 V	2.24 mm	303 MHz	14 mm	Not Qualified	18874368 bit	2.38 V		20	260	.15 Amp	22 mm	1.6 ns
UPD2149D	Renesas Electronics	STANDARD SRAM	OTHER	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K		-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18						Not Qualified	4096 bit		e0					55 ns
UPD100504D-15	Renesas Electronics	STANDARD SRAM	OTHER	32	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	SEPARATE		-4.5	4	IN-LINE	DIP32,.4	SRAMs	2.54 mm	85 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32						Not Qualified	262144 bit		e0					15 ns
UPB100474ED-3	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0					3 ns
100474S15D	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	TIN LEAD	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0					15 ns
HM64YLB36514BP-6H	Renesas Electronics	LATE-WRITE SRAM	OTHER	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119		2.63 V	2.24 mm	153 MHz	14 mm	Not Qualified	18874368 bit	2.38 V	e1			.15 Amp	22 mm	5.5 ns
UPB100474B-8	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-CQFP-F24						Not Qualified	4096 bit		e0					8 ns
UPB100474EDH-4	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0					4 ns
UPB100474ED-4	Renesas Electronics	STANDARD SRAM	OTHER	24	DIP	RECTANGULAR	CERAMIC	NO			-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	1024 words	SEPARATE		-4.5	4	IN-LINE	DIP24,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24						Not Qualified	4096 bit		e0					4 ns
HM100504F-12	Renesas Electronics	STANDARD SRAM	OTHER	28	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	ECL	-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS		65536 words				4	FLATPACK			.762 mm	85 Cel		64KX4	64K		0 Cel		DUAL	R-GDFP-F28			2.29 mm		12.92 mm	Not Qualified	262144 bit						13.6 mm	12 ns
UPB100474ABH-6	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC	YES			-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	250 mA	1024 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-XQFP-F24						Not Qualified	4096 bit		e0					6 ns
UPB100A484D-7	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE		-4.5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T28						Not Qualified	16384 bit		e0					7 ns
UPB100474K-4.5	Renesas Electronics	STANDARD SRAM	OTHER	24	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL	-4.5 V	NO LEAD	PARALLEL	ASYNCHRONOUS	450 mA	1024 words	SEPARATE		-4.5	4	CHIP CARRIER	LCC,24,CORNER PAD	SRAMs		85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-CQCC-N24						Not Qualified	4096 bit		e0					4.5 ns
UPB100484AD-5	Renesas Electronics	STANDARD SRAM	OTHER	28	DIP	RECTANGULAR	CERAMIC	NO		ECL100K	-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	SEPARATE		-4.5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28						Not Qualified	16384 bit		e0					5 ns
HM101504F-12	Renesas Electronics	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	ECL	-5.2 V	J BEND	PARALLEL	ASYNCHRONOUS		65536 words				4	SMALL OUTLINE			1.27 mm	85 Cel		64KX4	64K		0 Cel		DUAL	R-PDSO-J32			3.76 mm		10.16 mm	Not Qualified	262144 bit						20.71 mm	12 ns
UPB100474EBH-4	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC	YES			-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	330 mA	1024 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-XQFP-F24						Not Qualified	4096 bit		e0					4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.