OTHER SRAM 1,787

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6R4016C1C-JE10	Samsung	STANDARD SRAM	OTHER	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	28.58 mm	10 ns
KM68U1000CLRGE-8L	Samsung	STANDARD SRAM	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V	BATTERY BACKUP	e0				.000005 Amp	11.8 mm	85 ns
KM684002CTE-1000	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX8	512K		-25 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							18.41 mm	10 ns
K6R4016C1C-TE150	Samsung	STANDARD SRAM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel		DUAL		R-PDSO-G44	3				Not Qualified	4194304 bit					240		.01 Amp		15 ns
KM684002AE-20	Samsung	STANDARD SRAM	OTHER	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		3-STATE	512KX8	512K		-25 Cel		DUAL	1	R-PDSO-J36		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V					YES		23.5 mm	20 ns
KM68U1000CLTE-8	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-25 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V							18.4 mm	85 ns
KM681000BLTE-10L	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.000025 Amp	20 mm	100 ns
KM68U1000CLRGE-7L	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit			e0				.00002 Amp		70 ns
K6R4016C1C-FE15	Samsung	STANDARD SRAM	OTHER	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel	TIN LEAD	BOTTOM		S-PBGA-B48		5.5 V	1.2 mm	9 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	9 mm	15 ns
KM68U512ALGE-8L	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	3 mm	11.43 mm	Not Qualified	524288 bit	2.7 V		e0				.00001 Amp	20.47 mm	85 ns
KM684002CTE-1200	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX8	512K		-25 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							18.41 mm	12 ns
KM68U1000BLTE-10L	Samsung	STANDARD SRAM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0			YES	.000015 Amp	18.4 mm	100 ns
K6R4016C1C-TE10	Samsung	STANDARD SRAM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	18.41 mm	10 ns
K6R4016C1C-JE120	Samsung	STANDARD SRAM	OTHER	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel		DUAL		R-PDSO-J44	3				Not Qualified	4194304 bit					240		.01 Amp		12 ns
K6R4004C1A-JE15T	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	1MX4	1M	4.5 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	4194304 bit			e0				.01 Amp		15 ns
K6R4008C1C-TE20T	Samsung	STANDARD SRAM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	4.5 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44					Not Qualified	4194304 bit			e0				.01 Amp		20 ns
KM68U512ALGE-10L	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.3 V	3 mm	11.43 mm	Not Qualified	524288 bit	2.7 V		e0			YES	.000015 Amp	20.47 mm	100 ns
KM68U1000CLGE-10L	Samsung	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.3 V	3 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V		e0				.000005 Amp	20.47 mm	100 ns
K6R4016C1C-TE120	Samsung	STANDARD SRAM	OTHER	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	4.5 V	-25 Cel		DUAL		R-PDSO-G44	3				Not Qualified	4194304 bit					240		.01 Amp		12 ns
MT45W2ML16BABB-851WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1					8 mm	85 ns
MT45W2MW16PFA-60LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-30 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0					8 mm	60 ns
MT45W2ML16BFB-706LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0				.00009 Amp	8 mm	70 ns
MT45W2MW16BBB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260		.00011 Amp	8 mm	70 ns
MT45W2MV16BFB-601LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0					8 mm	60 ns
MT45W2MV16BABB-601WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1					8 mm	60 ns
MT45W4MV16PFA-60LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0					8 mm	60 ns
MT45W2ML16BAFB-701LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0					8 mm	70 ns
MT45W4MW16PFA-60WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			4MX16	4M		-30 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0					8 mm	60 ns
MT45W2MW16PABA-60LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e8	30	260			8 mm	60 ns
MT45W2MV16PAFA-70WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0					8 mm	70 ns
MT45W2MW16BAFB-708WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00011 Amp	8 mm	70 ns
MT45W2ML16BAFB-856WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0					8 mm	85 ns
MT45W2ML16BFB-706WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0				.00011 Amp	8 mm	70 ns
MT45W4MV16BFB-858WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0				.00012 Amp	8 mm	85 ns
TTS92256GK-25C-12	Micron Technology	STANDARD SRAM	OTHER	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	85 Cel		3-STATE	64KX4	64K	2 V	-55 Cel		QUAD		R-XQCC-N28					Not Qualified	262144 bit							.0003 Amp		25 ns
MT45W4ML16BBB-856LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260		.0001 Amp	8 mm	85 ns
MT45W2ML16PFA-85LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00009 Amp	8 mm	85 ns
MT45W1MV16PABA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1					8 mm	85 ns
MT45W2MW16BFB-706LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0				.00009 Amp	8 mm	70 ns
MT45W2MV16BFB-606LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0					8 mm	60 ns
MT45W4MW16BFB-706LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0				.0001 Amp	8 mm	70 ns
MT45W4MV16BFB-851WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0				.00012 Amp	8 mm	85 ns
MT45W2MV16BABB-851LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1					8 mm	85 ns
MT45W2MV16PFA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0				.00011 Amp	8 mm	85 ns
MT45W2MW16BAFB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-30 Cel	TIN LEAD SILVER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0					8 mm	70 ns
MT45W4MV16BBB-851WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1		260		.00012 Amp	8 mm	85 ns
MT45W2MV16PABA-85WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1					8 mm	85 ns
MT45W2MW16BABB-606LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260			8 mm	60 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.