Analog Devices SRAM 447

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1265Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	5		8	IN-LINE				70 Cel	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T36	5.5 V			Not Qualified	8388608 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1245YP	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words	5		8	MICROELECTRONIC ASSEMBLY				70 Cel	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-XDMA-N34	5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1250Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	512KX8	512K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32	5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3			.0006 Amp		70 ns
DS1230AB-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	32KX8	32K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3			.0006 Amp		120 ns
DS1250ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-PDSO-U34	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	DATA RETENTION > 10 YEARS	e0			.005 Amp	24.5745 mm	70 ns
DS1230W	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words	3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-N28				Not Qualified	262144 bit		10 YEARS OF DATA RETENTION PERIOD	e0					150 ns
DS1265Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel	1MX8	1M	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P36	5.5 V			Not Qualified	8388608 bit	4.5 V		e3			.0002 Amp		70 ns
DS1230YL-85-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel							Not Qualified	262144 bit						.005 Amp		85 ns
DS1245W-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel	128KX8	128K	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P32	3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		100 ns
DS1230YP-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel	32KX8	32K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-C34	5.5 V	6.85 mm	23.495 mm	Not Qualified	262144 bit	4.5 V		e3			.0006 Amp	25.019 mm	70 ns
DS1225AB-170-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	65536 bit			e0			.005 Amp		170 ns
DS1220AD-150-IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5		8	IN-LINE			2.54 mm	85 Cel	2KX8	2K	-40 Cel		DUAL	R-XDIP-T24	5.5 V	10.54 mm	15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		33.785 mm	150 ns
DS1245WP-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	128KX8	128K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-U34	3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		150 ns
DS1230AB-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel	32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-XDMA-P28	5.25 V			Not Qualified	262144 bit	4.75 V		e3			.0006 Amp		120 ns
DS1200S+C02	Analog Devices	NON-VOLATILE SRAM

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.