Analog Devices SRAM 447

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1330Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1609SN-35	Analog Devices	MULTI-PORT SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X8	256	4.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDSO-G24	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0			.0003 Amp	15.4 mm	35 ns
DS1330AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1750YLPM-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	524288 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel									Not Qualified	4194304 bit						.004 Amp		200 ns
DS1345ABLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0				24.5745 mm	100 ns
DS1245WP-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34					Not Qualified	1048576 bit		10 YEARS OF DATA RETENTION PERIOD	e0					150 ns
DS1245Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N32		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1220AD-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P24		5.5 V	10.668 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e3	30	260	.01 Amp	33.02 mm	100 ns
DS1230P-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				50 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel									Not Qualified	262144 bit						.00015 Amp		100 ns
DS1250YP-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3			.0006 Amp		70 ns
DS1225AB-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3			.01 Amp		150 ns
DS1225AD-150IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3			.01 Amp		150 ns
DS1245YP-120-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V			Not Qualified	1048576 bit	4.5 V		e0			.005 Amp		120 ns
DS1230Y-120IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28		5.5 V			Not Qualified	262144 bit	4.5 V		e3			.0006 Amp		120 ns
DS1217A/16K-28	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30			PLASTIC/EPOXY	NO		CMOS				75 mA	2048 words				8		CARD30	SRAMs		70 Cel		2KX8	2K		0 Cel									Not Qualified	16384 bit						.01 Amp		250 ns
DS1235Y-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel		DUAL		R-XDMA-X28		5.5 V			Not Qualified	262144 bit	4.5 V							100 ns
DS1250W-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P32		3.6 V			Not Qualified	4194304 bit	3 V		e3			.00025 Amp		100 ns
DS1245YP-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1230ABL-100-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel									Not Qualified	262144 bit						.005 Amp		100 ns
DS1230AB-200+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28		5.25 V			Not Qualified	262144 bit	4.75 V		e3			.0006 Amp		200 ns
DS1225AD-170+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-T28		5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	DATA RETENTION > 10 YEARS	e3				38.862 mm	170 ns
DS1250ABP-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1249Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1220AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.25 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP	e0				33.782 mm	200 ns
DS1230ABL-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel									Not Qualified	262144 bit						.005 Amp		150 ns
DS1230ABL-200-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel									Not Qualified	262144 bit						.005 Amp		200 ns
DS1270AB-100#	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel		DUAL		R-PDMA-P36		5.25 V			Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED			100 ns
DS1220AB-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.25 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP	e0				33.782 mm	200 ns
DS1249Y-70#	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	70 Cel		256KX8	256K		0 Cel		DUAL		R-XDIP-P32		5.5 V	10.922 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED		43.053 mm	70 ns
DS1245Y	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-N32		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1245YP-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-C34		5.5 V	6.85 mm	23.495 mm	Not Qualified	1048576 bit	4.5 V		e3			.0006 Amp	25.019 mm	70 ns
DS1247Y-100IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE			2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	9.27 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	DATA RETENTION = 10 YRS	e0				53.085 mm	100 ns
DS1245W-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P32		3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		100 ns
DS1249AB-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE			2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1230AB	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-N28		5.25 V			Not Qualified	262144 bit	4.75 V	BATTERY BACK-UP	e0					200 ns
DS1245AB-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32	1	5.25 V			Not Qualified	1048576 bit	4.75 V		e3			.0006 Amp		100 ns
DS1220AB-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P24		5.25 V	10.668 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e3			.01 Amp	33.02 mm	100 ns
DS1250YP-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3			.0006 Amp		70 ns
DS1200P	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	10	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			6 mA	128 words				8	IN-LINE	DIP10,.3	SRAMs	2.54 mm	70 Cel		128X8	128		0 Cel	TIN LEAD	DUAL		R-PDIP-T10					Not Qualified	1024 bit			e0			.0025 Amp
DS1245AB-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDIP-P32		5.25 V	10.922 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0006 Amp	43.053 mm	70 ns
DS1245ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	DATA RETENTION > 10 YEARS	e0			.005 Amp	24.5745 mm	100 ns
DS1265Y-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel		1MX8	1M		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P36		5.5 V			Not Qualified	8388608 bit	4.5 V		e3			.0002 Amp		100 ns
DS1250ABL-100-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel									Not Qualified	4194304 bit						.005 Amp		100 ns
DS1230W-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		256KX8	256K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-T28		3.6 V	10.668 mm	15.24 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp	38.225 mm	150 ns
DS1220AB-150IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-T24		5.25 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e3				33.782 mm	150 ns
DS1225AB-200IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e3			.01 Amp		200 ns
DS1250W-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N32					Not Qualified	4194304 bit		10 YEARS OF DATA RETENTION PERIOD	e0					150 ns
DS1230Y-55	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			120 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0			.005 Amp		45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.