Analog Devices SRAM 447

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
DS1658Y-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			170 mA	131072 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		128KX16	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T40					Not Qualified	2097152 bit			e0	.01 Amp		70 ns
DS1630AB-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		70 ns
DS1658AB-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			170 mA	131072 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T40					Not Qualified	2097152 bit			e0	.01 Amp		70 ns
DS1630Y-85	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		85 ns
DS1645Y-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	42.925 mm	100 ns
DS1650Y-85-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	42.925 mm	85 ns
DS1645YLPM-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS					85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel									Not Qualified	1048576 bit				.005 Amp		70 ns
DS1645ABL-85-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	24.5745 mm	85 ns
DS1650ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION		.005 Amp	24.5745 mm	100 ns
DS1630Y-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		70 ns
DS1645Y-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0	.005 Amp		70 ns
5962-9674502QXC	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-G240		5.25 V	4.3 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4		32 mm
5962-9674502QXX	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-G240		5.25 V	4.3 mm	32 mm	Not Qualified	4194304 bit	4.75 V				32 mm
5962-9674402QYX	Analog Devices	STANDARD SRAM	MILITARY	240	SSOP	SQUARE	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	SMALL OUTLINE, SHRINK PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		DUAL		S-XDSO-G240		3.47 V	4.2 mm	32 mm	Not Qualified	4194304 bit	3.13 V				32 mm
5962-9674502QYX	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-G240		5.25 V	4.2 mm	32 mm	Not Qualified	4194304 bit	4.75 V				32 mm
5962-9674402QUC	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	FLAT	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-F240		3.47 V	3.7 mm	32 mm	Not Qualified	4194304 bit	3.13 V		e4		32 mm
5962-9674402QYC	Analog Devices	STANDARD SRAM	MILITARY	240	SSOP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	SMALL OUTLINE, SHRINK PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	DUAL		S-XDSO-G240		3.47 V	4.2 mm	32 mm	Not Qualified	4194304 bit	3.13 V		e4		32 mm
5962-9674502QUC	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-F240		5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4		32 mm
5962-9674502QTX	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-F240		5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V				32 mm
5962-9560013QTX	Analog Devices	STANDARD SRAM	MILITARY	36	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		524288 words		5		8	FLATPACK			1.27 mm	125 Cel		512KX8	512K		-55 Cel		DUAL		R-XDFP-F36		5.5 V	3.18 mm	12.955 mm	Not Qualified	4194304 bit	4.5 V				23.365 mm	15 ns
5962-9674402QUX	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-F240		3.47 V	3.7 mm	32 mm	Not Qualified	4194304 bit	3.13 V				32 mm
5962-9674502QYC	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-G240		5.25 V	4.2 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4		32 mm
5962-9674502QTC	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-F240		5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4		32 mm
5962-9674502QUX	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-F240		5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V				32 mm
DS1345ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1730YLPM-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS					40 mA	32768 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel									Not Qualified	262144 bit				.004 Amp		200 ns
DS1350YLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0		24.5745 mm	70 ns
DS2257S	Analog Devices	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0	.000001 Amp		150 ns
DS1345W-150	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	1048576 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0			150 ns
DS1330YL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION PERIOD		.00015 Amp	24.5745 mm	100 ns
DS22B57S	Analog Devices	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	3.3	3.3/5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	1	3.6 V	2.65 mm	7.5 mm	Not Qualified	262144 bit	3 V	OPERATION OF 4.5 VOLTS TO 5.5 VOLTS ALSO POSSIBLE	e0	.001 Amp	17.9 mm	150 ns
DS1350ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	70 ns
DS1745YL-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS					40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel									Not Qualified	1048576 bit				.004 Amp		150 ns
DS3803	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	MOS		NO LEAD	PARALLEL	ASYNCHRONOUS	300 mA	32768 words		5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel		32KX32	32K		0 Cel	TIN LEAD	SINGLE		R-XSMA-N72		5.5 V			Not Qualified	1048576 bit	4.5 V	USER CONFIGURABLE AS 64K X 16 OR 128K X 8	e0			70 ns
DS1645EE-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0	.005 Amp		70 ns
DS1330ABL-100IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION = 10 YRS	e0	.00015 Amp	24.4475 mm	100 ns
DS1730Y-200IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words		3	3/3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.6 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	2.7 V	DATA RETENTION = 10 YRS	e0	.004 Amp	37.85 mm	200 ns
DS1750YL-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS					40 mA	524288 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel									Not Qualified	4194304 bit				.004 Amp		150 ns
DS1750YL-200-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS					40 mA	524288 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel									Not Qualified	4194304 bit				.004 Amp		200 ns
DS1350W-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	4194304 bit	3 V	10 YEARS MINIMUM DATA RETENTION	e0			150 ns
DS1350ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS1350WP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS		J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e3	.00015 Amp		100 ns
DS1609	Analog Devices	MULTI-PORT SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	256X8	256	2.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDIP-T24					Not Qualified	2048 bit			e0	.0003 Amp		50 ns
DS2257	Analog Devices	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	3	3/5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	2.7 V		e0	.000001 Amp	31.495 mm	150 ns
DS1350ABL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	WITH BATTERY MONITOR		.00015 Amp	24.5745 mm	100 ns
DS2430N	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	3			PLASTIC/EPOXY	NO		CMOS					.5 mA	32 words			3/5	8		SIP3,.1,50	SRAMs	1.27 mm	85 Cel		32X8	32		-40 Cel	TIN LEAD	SINGLE							Not Qualified				e0	.00000015 Amp		15000 ns
DS1345Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0			70 ns
DS1645EE-85	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0	.005 Amp		85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.