Analog Devices SRAM 447

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1750YLPM-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	524288 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel										Not Qualified	4194304 bit						.004 Amp		150 ns
DS1345WP-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		3.6 V				Not Qualified	1048576 bit	3 V		e0			.00015 Amp		150 ns
DS1345YLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.5 V	6.35 mm		21.5265 mm	Not Qualified	1048576 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0				24.5745 mm	100 ns
DS1330ABP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.25 V				Not Qualified	262144 bit	4.75 V		e3			.00015 Amp		100 ns
DS1345YP-100+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.5 V				Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e3			.00015 Amp		100 ns
DS2229	Analog Devices	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80	SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	2 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80		5.5 V	18.7706 mm			Not Qualified	8388608 bit	4.5 V	BATTERY BACKUP OPERATION	e0			.000008 Amp		85 ns
DS1330WP-150-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		3.6 V				Not Qualified	262144 bit	3 V		e0			.00015 Amp		150 ns
DS1750Y-200-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	524288 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32						Not Qualified	4194304 bit			e0			.004 Amp		200 ns
DS1330W-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34						Not Qualified	262144 bit		10 YEAR DATA RETENTION PERIOD	e0					150 ns
DS1745YLPM-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel										Not Qualified	1048576 bit						.004 Amp		150 ns
DS2219-120	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		HYBRID	NO LEAD			15 mA	1048576 words		5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		1MX9	1M		0 Cel		SINGLE		R-PSMA-N30						Not Qualified	9437184 bit						.015 Amp		120 ns
DS1330WP-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		3.6 V				Not Qualified	262144 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		100 ns
DS1330WP-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		3.6 V				Not Qualified	262144 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		150 ns
DS1750YLPM-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	524288 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel										Not Qualified	4194304 bit						.004 Amp		150 ns
DS1350ABP-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.25 V				Not Qualified	4194304 bit	4.75 V		e3			.0006 Amp		70 ns
DS1350W-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34						Not Qualified	4194304 bit		10 YEAR DATA RETENTION PERIOD	e0					150 ns
DS1330ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION > 10 YEARS	e0			.00015 Amp	24.5745 mm	70 ns
DS1345ABP-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.25 V				Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e3			.00015 Amp		70 ns
DS2219-150	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		HYBRID	NO LEAD			15 mA	1048576 words		5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		1MX9	1M		0 Cel		SINGLE		R-PSMA-N30						Not Qualified	9437184 bit						.015 Amp		150 ns
DS1645EE	Analog Devices	NON-VOLATILE SRAM MODULE		32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm			128KX8	128K			TIN LEAD	DUAL		R-PDIP-T32		5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				42.925 mm
DS1330YLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.5 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0				24.5745 mm	100 ns
DS1330ABL-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION > 10 YEARS	e0			.00015 Amp	24.5745 mm	100 ns
DS1745YLPM-200	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel										Not Qualified	1048576 bit						.004 Amp		200 ns
DS1330YP-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		5.5 V				Not Qualified	262144 bit	4.5 V		e3			.00015 Amp		70 ns
DS1330YLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.5 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0				24.5745 mm	70 ns
DS1350Y-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1380N	Analog Devices	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		2048 words		5		8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	5.08 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e0				31.75 mm
DS2015S	Analog Devices	STANDARD SRAM	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL	ASYNCHRONOUS	6 mA	32 words	COMMON			8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	70 Cel	3-STATE	32X8	32		0 Cel	TIN LEAD	DUAL	4, (3 LINE)	R-PDSO-G20				4 MHz		Not Qualified				e0			.006 Amp
DS1730YLPM-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	32768 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel										Not Qualified	262144 bit						.004 Amp		150 ns
DS1345YLPM-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.5 V	6.35 mm		21.5265 mm	Not Qualified	1048576 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0				24.5745 mm	70 ns
DS1345WP-100IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34		3.6 V				Not Qualified	1048576 bit	3 V		e3			.00015 Amp		100 ns
DS1350ABLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm		21.5265 mm	Not Qualified	4194304 bit	4.75 V	OVER 10 YEARS DATA RETENTION	e0				24.5745 mm	100 ns
DS1350YL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm		21.5265 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION PERIOD				.00015 Amp	24.5745 mm	100 ns
DS1745YL-200-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel										Not Qualified	1048576 bit						.004 Amp		200 ns
DS1745YLPM-200-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel										Not Qualified	1048576 bit						.004 Amp		200 ns
DS1745Y-200IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		3	3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		3.6 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	2.7 V	DATA RETENTION = 10 YRS	e0			.004 Amp	42.925 mm	200 ns
DS1345YP-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-U34	1	5.5 V				Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e3	40	245	.00015 Amp		70 ns
DS1345ABL-70	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	1048576 bit	4.75 V	WITH BATTERY MONITOR				.00015 Amp	24.5745 mm	70 ns
DS1345AB-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.25 V				Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS2430EN	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			.5 mA	32 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	SRAMs	.635 mm	85 Cel		32X8	32		-40 Cel	TIN LEAD	DUAL		R-PDSO-G20						Not Qualified				e0			.00000015 Amp		15000 ns
DS1645EE-120	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32						Not Qualified	1048576 bit			e0			.005 Amp		120 ns
DS1609N-35	Analog Devices	MULTI-PORT SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	256X8	256	4.5 V	-40 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDIP-T24		5.5 V	5.08 mm		15.24 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0			.0003 Amp	31.75 mm	35 ns
DS1645EE-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32						Not Qualified	1048576 bit			e0			.005 Amp		70 ns
DS1350AB-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N34		5.25 V				Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					70 ns
DS1350YLPM-100	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.5 V	6.35 mm		21.5265 mm	Not Qualified	4194304 bit	4.5 V	OVER 10 YEARS DATA RETENTION	e0				24.5745 mm	100 ns
DS1330ABL-70-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-U34		5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	DATA RETENTION > 10 YEARS	e0			.00015 Amp	24.5745 mm	70 ns
DS1330BL-100-IND	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm		21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION PERIOD				.00015 Amp	24.5745 mm	100 ns
DS1745YLPM-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel										Not Qualified	1048576 bit						.004 Amp		150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.