Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1264XV18-450BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1445 mA	1048576 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel		BOTTOM	2	R-PBGA-B165		1.9 V	1.4 mm	450 MHz	13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED	NO	1.445 Amp	15 mm
CY7C1426KV18-300BZCT	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	520 mA	4194304 words	SEPARATE		1.5/1.8,1.8	9	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3			300 MHz		Not Qualified	37748736 bit			e0		260		.27 Amp		.45 ns
CY7C1472BV33-200BZXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3 ns
CY7C1462AV33-200BZXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	425 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.63 V	1.4 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.12 Amp	17 mm	3.2 ns
CY7C1387F-250BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				250 MHz		Not Qualified	18874368 bit							.07 Amp		3.4 ns
CY14B101NA-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		64KX16	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.005 Amp	22.415 mm	25 ns
CY7C1475V25-100BX	Infineon Technologies	ZBT SRAM		209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON		1.8/2.5,2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm		3-STATE	1MX72	1M	2.38 V			BOTTOM		R-PBGA-B209				100 MHz		Not Qualified	75497472 bit									8.5 ns
CY62147GE18-55ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	1.8		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		DUAL	1	R-PDSO-G44		2.2 V	1.194 mm		10.16 mm		4194304 bit	1.65 V					YES	.000013 Amp	18.415 mm	55 ns
CY7C1480BV25-200AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-F100	3	2.625 V	1.4 mm	200 MHz	14 mm	Not Qualified	75497472 bit	2.375 V		e3	40	260			20 mm	3 ns
CY62137FV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm		6 mm	Not Qualified	2097152 bit	1.65 V		e1	30	260		.000004 Amp	8 mm	55 ns
CY14B102L-ZSP20XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			90 mA	262144 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	125 Cel		256KX8	256K		-40 Cel		DUAL		R-PDSO-G54						Not Qualified	2097152 bit					260		.005 Amp		20 ns
CY7C1418KV18-250BZI	Infineon Technologies	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.26 Amp	15 mm	.45 ns
CY7C1440AV25-167BZXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	335 mA	1048576 words	COMMON	2.5	1.8/2.5,2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	2.375 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	167 MHz	15 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e1	20	260	YES	.12 Amp	17 mm	3.4 ns
CY7C0241E-55AXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	4096 words	COMMON	5	5	18	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	4KX18	4K	2 V	-40 Cel		QUAD	2	S-PQFP-G100						Not Qualified	73728 bit							.0015 Amp		55 ns
CY7C1446AV25-167BGXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	335 mA	524288 words	COMMON	2.5	1.8/2.5,2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	2.375 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	2.625 V	1.96 mm	167 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e1	20	260	YES	.12 Amp	22 mm	3.4 ns
CY14B104LA-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		512KX8	512K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260			22.415 mm	25 ns
CY7C1372D-250BZC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220		.07 Amp	15 mm	2.6 ns
CY7C1387F-167BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			167 MHz		Not Qualified	18874368 bit			e1	20	260		.07 Amp		3.4 ns
CY7C1380D-250BZXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.07 Amp	15 mm	2.6 ns
CY7C1462AV25-250AC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	410 mA	2097152 words	COMMON	2.5	1.8/2.5,2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	2MX18	2M	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.6 mm	250 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0				.1 Amp	20 mm	2.6 ns
CY7C1372D-250BZI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220		.07 Amp	15 mm	2.6 ns
CY7C1011DV33-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	3 V		e4	20	260		.01 Amp	18.415 mm	10 ns
CY7C1470V25-300BGC	Infineon Technologies	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.8/2.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	2.38 V	0 Cel		BOTTOM		R-PBGA-B119				300 MHz		Not Qualified	75497472 bit									2.2 ns
CY7C1354CV25-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON	2.5		36	FLATPACK, LOW PROFILE	QFP100,.63X.87		.65 mm	70 Cel	3-STATE	256KX36	256K	2.375 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD	1	R-PQFP-G100	3	2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	9437184 bit	2.375 V		e4		260	YES	.04 Amp	20 mm	3.5 ns
CY7C1382AV25-133BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119				133 MHz		Not Qualified	18874368 bit			e0				.015 Amp		4.2 ns
CY7C1413KV18-250BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V		e1	30	260		.26 Amp	15 mm	.45 ns
CY62148GN-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm		4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	45 ns
CY14B512Q2A-SXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words		3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		64KX8	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	524288 bit	2.7 V		e4		260		.00015 Amp	4.889 mm
CY14B104NA-ZSP20XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260		.005 Amp	22.415 mm	20 ns
CY7C1565KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1310 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.38 Amp	15 mm	.45 ns
CY62147G-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	5		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm		4194304 bit	4.5 V				260	YES	.000013 Amp	18.415 mm	45 ns
CY7C0431V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX20	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	2621440 bit							.01 Amp		3.5 ns
CY7C1061G-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm		12 mm		16777216 bit	4.5 V				260			18.4 mm	10 ns
CY14V101Q3-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		3.3	1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	PURE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	3 V				260		.005 Amp	10.2865 mm
CY7C1148KV18-400BZC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.29 Amp	15 mm	.45 ns
CY7C1356C-250BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.04 Amp	22 mm	2.8 ns
CY14V104LA-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	52 mA	524288 words	COMMON	3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	3 V		e1	30	260	YES	.008 Amp	10 mm	45 ns
CY7C1474BV33-167BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	85 Cel	3-STATE	1MX72	1M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	3.6 V	1.96 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			22 mm	3.4 ns
CY7C1263XV18-633BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	633 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		1.16 Amp	15 mm	.45 ns
CY7C1248KV18-400BZC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0		220		.31 Amp	15 mm	.45 ns
STK14C88C-35C35MTR	Infineon Technologies	NON-VOLATILE SRAM
STK14C88C-5C35MTR	Infineon Technologies																													GOLD				1									e4		220
CY7C1482BV33-167AXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	4194304 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	4MX18	4M	3.14 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3			167 MHz		Not Qualified	75497472 bit			e4	40	260				3.4 ns
CY7C1361C-133AXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.135 V	-40 Cel	MATTE TIN	QUAD	1	R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260	YES	.04 Amp	20 mm	6.5 ns
CY7C1382BV25-150AI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	190 mA	1048576 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	1MX18	1M	2.38 V	-40 Cel		QUAD		R-PQFP-G100				150 MHz		Not Qualified	18874368 bit							.03 Amp		3.8 ns
CY7C1145KV18-400BZXCT	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.29 Amp	15 mm	.45 ns
CY7C1061G30-10ZXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		.5 mm	125 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V					YES	.05 Amp	18.4 mm	10 ns
CY62157EV30LL-55ZXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	8388608 bit	2.2 V		e4	20	260	YES	.00003 Amp	18.4 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.