Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.135 V |
0 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e3 |
40 |
260 |
YES |
.04 Amp |
20 mm |
8 ns |
||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
||||||||||||
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
435 mA |
1048576 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
2.625 V |
1.4 mm |
250 MHz |
15 mm |
Not Qualified |
37748736 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e0 |
220 |
.12 Amp |
17 mm |
2.6 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
2097152 words |
COMMON |
3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
2.2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
YES |
.000008 Amp |
8 mm |
45 ns |
|||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
8192 words |
SEPARATE |
2.5 |
8 |
SMALL OUTLINE |
SOP16,.4 |
1.27 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
2.4 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G16 |
2.6 V |
2.667 mm |
40 MHz |
7.4925 mm |
65536 bit |
2.4 V |
NO |
.00025 Amp |
10.2865 mm |
||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
131072 words |
3 |
8 |
GRID ARRAY, THIN PROFILE |
1 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B24 |
3 |
3.6 V |
1.2 mm |
6 mm |
1048576 bit |
2.7 V |
e1 |
260 |
8 mm |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G48 |
3 |
2.2 V |
1.2 mm |
12 mm |
16777216 bit |
1.65 V |
260 |
18.4 mm |
15 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
170 mA |
1048576 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
37748736 bit |
3.135 V |
FLOW-THROUGH |
e4 |
YES |
.08 Amp |
20 mm |
6.5 ns |
|||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
57 mA |
1048576 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
8 |
SRAMs |
.8 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
8388608 bit |
2.7 V |
e3 |
20 |
260 |
.006 Amp |
22.415 mm |
45 ns |
||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
250 MHz |
Not Qualified |
9437184 bit |
260 |
.04 Amp |
2.8 ns |
||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
2097152 words |
COMMON |
3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
2.2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
YES |
.000008 Amp |
8 mm |
45 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
125 Cel |
1MX16 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
8 mm |
55 ns |
||||||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
305 mA |
1048576 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
167 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
e0 |
.1 Amp |
20 mm |
3.4 ns |
|||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
4194304 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
TIN LEAD SILVER |
BOTTOM |
R-PBGA-B165 |
3.6 V |
1.4 mm |
250 MHz |
15 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
17 mm |
3 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
8 |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
e1 |
260 |
8 mm |
45 ns |
|||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
131072 words |
2.5 |
2.5 |
8 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G8 |
3 |
2.6 V |
1.727 mm |
3.8985 mm |
Not Qualified |
1048576 bit |
2.4 V |
e4 |
30 |
260 |
.00015 Amp |
4.889 mm |
||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
4194304 bit |
2.2 V |
e4 |
260 |
18.415 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
335 mA |
2097152 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX18 |
2M |
2.38 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
2.625 V |
1.4 mm |
167 MHz |
15 mm |
Not Qualified |
37748736 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.12 Amp |
17 mm |
3.4 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
4194304 bit |
2.2 V |
e4 |
260 |
18.415 mm |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
166 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
3.5 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
260 |
20 mm |
8.5 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
170 mA |
1048576 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
37748736 bit |
3.135 V |
FLOW-THROUGH |
e4 |
260 |
YES |
.08 Amp |
20 mm |
6.5 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
DUAL |
R-PDSO-G44 |
5.5 V |
1.194 mm |
10.16 mm |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.415 mm |
45 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.194 mm |
10.16 mm |
4194304 bit |
2.2 V |
18.415 mm |
45 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
6.5 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
110 mA |
524288 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
8388608 bit |
3 V |
e1 |
20 |
260 |
.02 Amp |
8 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
32768 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G16 |
3 |
3.6 V |
2.667 mm |
7.4925 mm |
Not Qualified |
262144 bit |
2.7 V |
260 |
.00025 Amp |
10.2865 mm |
||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
32 |
GRID ARRAY, HEAT SINK/SLUG |
1.27 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
14 mm |
16777216 bit |
2.2 V |
e1 |
260 |
22 mm |
10 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
36 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA36,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1.5 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B36 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
2.2 V |
e0 |
260 |
.000007 Amp |
8 mm |
45 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-J32 |
3 |
Not Qualified |
1048576 bit |
e4 |
40 |
260 |
.0012 Amp |
10 ns |
||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
16777216 bit |
1.65 V |
e1 |
260 |
8 mm |
15 ns |
||||||||||||||||||||||
Infineon Technologies |
DDR SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
1048576 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
1.7 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
333 MHz |
13 mm |
Not Qualified |
18874368 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e0 |
260 |
.27 Amp |
15 mm |
.45 ns |
||||||||||||
|
Infineon Technologies |
QDR II SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
790 mA |
2097152 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
250 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V |
e1 |
20 |
260 |
15 mm |
.45 ns |
|||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
54 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
262144 words |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G54 |
3 |
Not Qualified |
4194304 bit |
e3 |
20 |
260 |
.003 Amp |
25 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
3.6 V |
1.4 mm |
15 mm |
16777216 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
17 mm |
45 ns |
||||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
3.6 V |
1.4 mm |
167 MHz |
15 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
220 |
17 mm |
3.4 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
2.2 V |
e1 |
20 |
260 |
.000007 Amp |
8 mm |
45 ns |
||||||||||||
|
Infineon Technologies |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
1.8 |
36 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
13 mm |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e1 |
15 mm |
.45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
260 |
20 mm |
8.5 ns |
|||||||||||||||||||||||
Infineon Technologies |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
680 mA |
2097152 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
250 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
260 |
15 mm |
.45 ns |
||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
32768 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
32KX36 |
32K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
117 MHz |
Not Qualified |
1179648 bit |
.018 Amp |
7.5 ns |
|||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
524288 bit |
e0 |
.0001 Amp |
20 ns |
||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
3.6 V |
1.4 mm |
250 MHz |
13 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.07 Amp |
15 mm |
2.6 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
2.997 mm |
11.303 mm |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
20.4465 mm |
45 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
10 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2.7 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-N8 |
3 |
3.6 V |
.8 mm |
40 MHz |
5 mm |
Not Qualified |
1048576 bit |
2.7 V |
e4 |
30 |
260 |
NO |
.005 Amp |
6 mm |
||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e4 |
40 |
260 |
.04 Amp |
20 mm |
6.5 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.