Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C2665KV18-550BZXC	Infineon Technologies	QDR II PLUS SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1520 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX36	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1			NO	.5 Amp	17 mm	.45 ns
CY7C1041GN-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	5		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1568KV18-550BZXI	Infineon Technologies	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.38 Amp	15 mm	.45 ns
CY7C1474BV33-200BGXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	72	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	70 Cel	3-STATE	1MX72	1M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	3.6 V	1.96 mm	200 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			22 mm	3 ns
CY62147G30-45BVXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1		260			8 mm	45 ns
STK14CA8C-3CITR	Infineon Technologies	NON-VOLATILE SRAM
CY7C1165KV18-400BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.29 Amp	15 mm	.45 ns
CY62148GN30-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	2.997 mm		11.303 mm		4194304 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			20.446 mm	45 ns
CY14B256Q3-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words		3	3	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	262144 bit	2.7 V		e3				.005 Amp	10.2865 mm
CY14C256I-SFXI	Infineon Technologies	NON-VOLATILE SRAM MODULE	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32768 words		2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	262144 bit	2.4 V		e3					10.2865 mm
CY7C1360C-166AJXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	3.5 ns
CY7C1366C-166AXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.135 V	0 Cel	MATTE TIN	QUAD	1	R-PQFP-G100	3	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260	YES	.04 Amp	20 mm	3.5 ns
CY14E064L-25XC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3					Not Qualified	65536 bit			e4	20	260		.0025 Amp		25 ns
CY14B101P-SFXET	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			15 mA	131072 words		3.3	3.3	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	125 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G16						Not Qualified	1048576 bit							.01 Amp
CY62138FV30LL-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.2 V		e3	20	260		.000004 Amp	18.4 mm	45 ns
CY62147G30-45B2XI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1		260	YES	.000013 Amp	8 mm	45 ns
CY7C1380C-200BZI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B165				200 MHz		Not Qualified	18874368 bit							.06 Amp		3 ns
CY14E116N-Z45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm		16777216 bit	4.5 V							18.4 mm	45 ns
CY7C1372D-167BZI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220		.07 Amp	15 mm	3.4 ns
CY7C1513KV18-300BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1318KV18-250BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	380 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.25 Amp	15 mm	.45 ns
CY7C1520KV18-333BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	640 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1019DL-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J32	3					Not Qualified	1048576 bit			e4	40	260		.0012 Amp		10 ns
CY7C1470V33-167AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3.4 ns
CY7C25442KV18-333BZI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	990 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	8	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	75497472 bit	1.7 V		e0				.29 Amp	15 mm	.45 ns
CY7C1474V25-167BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	2.5	1.8/2.5,2.5	72	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	85 Cel	3-STATE	1MX72	1M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	2.625 V	1.96 mm	167 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e1	20	260			22 mm	3.4 ns
CY7C1473BV33-133AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	4MX18	4M	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260		.305 Amp	20 mm	6.5 ns
CY7C109D-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.003 Amp	18.4 mm	10 ns
CY7C25442KV18-300BZI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	8	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	75497472 bit	1.7 V		e0				.28 Amp	15 mm	.45 ns
CY7C1471V33-133AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260			20 mm	6.5 ns
CY14B101KA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	52 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	8	SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm		7.5057 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	15.875 mm	45 ns
CY7C1020V33-20ZC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44						Not Qualified	524288 bit			e0				.001 Amp		20 ns
CY7C1480BV25-250BZI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.375 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B165	3	2.625 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	2.375 V		e0		220	YES	.12 Amp	17 mm	3 ns
CY14B116L-Z30XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2MX8	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		16777216 bit	2.7 V							18.4 mm	30 ns
CY7C1041GE18-15ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		2.2 V	1.194 mm		10.16 mm		4194304 bit	1.65 V							18.415 mm	15 ns
CY7C1387D-200AI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.07 Amp	20 mm	3 ns
CY7C1472BV25-200BZXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	4194304 words	COMMON	2.5	2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	2.38 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3 ns
CY14C101I-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V		e3		260		.00025 Amp	10.2865 mm
CY7C1460KV25-200BZXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX36	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm		15 mm		37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e1		260			17 mm
CY14B104M-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260		.003 Amp	18.415 mm	25 ns
CY7C1372DV25-200AC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0					20 mm	3 ns
CY7C2665KV18-450BZXI	Infineon Technologies	QDR II PLUS SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1290 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1			NO	.46 Amp	17 mm	.45 ns
CY7C1312KV18-250BZCT	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	560 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.25 Amp	15 mm	.45 ns
CY7C1268KV18-400BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.31 Amp	15 mm	.45 ns
CY14B101LA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	15.875 mm	45 ns
STK14C88C-C35I	Infineon Technologies
CY7C2165KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1					15 mm	.45 ns
CY7C1372DV25-167AC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0					20 mm	3.4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.