Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C25632KV18-500BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	500 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.36 Amp	15 mm	.45 ns
CY7C1482BV33-200BZI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220			17 mm	3 ns
CY14B116N-BZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B165		3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			17 mm	45 ns
CY7C1460KV33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		1MX36	1M		-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e4		260			20 mm
CY7C1380D-200BZXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.07 Amp	15 mm	3 ns
CY7C1009D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	5.5 V	3.556 mm		7.5819 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	20.828 mm	10 ns
CY7C1381KV33-100AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX36	512K		0 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V				260			20 mm	8.5 ns
CY7C1061G30-10BVXM	Infineon Technologies	STANDARD SRAM	MILITARY	48	VFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		BOTTOM	1	R-XBGA-B48		3.6 V	1 mm		6 mm		16777216 bit	2.2 V					YES	.05 Amp	8 mm	10 ns
CY7C1614KV18-300BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		36	GRID ARRAY				70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V				Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1
STK14CA8C-3C35I	Infineon Technologies
CY7C1069GN30-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX8	2M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm		16777216 bit	3 V							8 mm	10 ns
CY7C1480BV25-167BZXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	2.375 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	2.625 V	1.4 mm	167 MHz	15 mm	Not Qualified	75497472 bit	2.375 V		e1	20	260	YES	.12 Amp	17 mm	3.4 ns
CY14C101Q1A-SXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G8	3	2.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.4 V		e4	30	260		.00015 Amp	4.889 mm
CY14B104K-ZSP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260		.003 Amp	22.415 mm	45 ns
STK14EC16-BF25TR	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			65 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.003 Amp		25 ns
CY14B101Q3-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	3	3.6 V	2.667 mm	40 MHz	7.4925 mm	Not Qualified	1048576 bit	2.7 V		e4	40	260	NO	.005 Amp	10.2865 mm
CY14B116S-BZ25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V		e1		260			17 mm	25 ns
CY7C1061GN30-10BV1XIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1	30	260			8 mm	10 ns
CY14B101NA-BA20XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	2.7 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3.6 V		e1	30	260			10 mm	20 ns
STK14C88C-C35	Infineon Technologies
CY62136FV30LL-45ZSXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	18.415 mm	45 ns
CY7C1471BV33-133BZXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	133 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	20	260			17 mm	6.5 ns
CY7C1480BV33-200BZXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			200 MHz		Not Qualified	75497472 bit			e1	20	260				3 ns
CY7C1460AV25-250AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	435 mA	1048576 words	COMMON	2.5	1.8/2.5,2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	1MX36	1M	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	250 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e3	40	260		.12 Amp	20 mm	2.6 ns
CY14B256KA-SP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words	COMMON	3		8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		.635 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G48	3	3.6 V	2.794 mm		7.5057 mm		262144 bit	2.7 V		e4	30	260	YES	.005 Amp	15.875 mm	45 ns
CY14B101Q2A-S104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.00015 Amp	4.889 mm
CY14E101I-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V		e3				.00025 Amp	10.2865 mm
STK14CA8C-35C35M	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	COMMON	3.3		8	IN-LINE	DIP32,.3		2.54 mm	125 Cel	3-STATE	128KX8	128K	3 V	-55 Cel	GOLD	DUAL		R-CDIP-T32	1	3.6 V	3.96 mm		7.62 mm		1048576 bit	3 V		e4			YES	.01 Amp	40.64 mm	35 ns
CY14E101PA-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V		e3				.00025 Amp	10.2865 mm
CY14B104NA-ZS25XET	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	3 V				260			18.415 mm	25 ns
STK14EC16-BF45ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			52 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.003 Amp		45 ns
CY14B104K-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260		.003 Amp	22.415 mm	25 ns
CY62146GN30-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm		4194304 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	45 ns
CY7C1565KV18-400BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1000 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.32 Amp	15 mm	.45 ns
CY7C1472V25-167BZXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	167 MHz	15 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3.4 ns
CY14C101PA-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V		e3				.00025 Amp	10.2865 mm
STK14C88C-3C35I	Infineon Technologies	NON-VOLATILE SRAM
CY62138FV30LL-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	262144 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	2.2 V		e4	30	260		.000004 Amp	18.4 mm	45 ns
CY14B108K-ZS45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	40	260		.01 Amp	18.415 mm	45 ns
CY7C1480BV33-167AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260			20 mm	3.4 ns
CY7C1383KVE33-133AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		1MX18	1M		-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V				260			20 mm	6.5 ns
CY7C1472BV33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	4194304 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	4MX18	4M	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3.4 ns
CY62147GE-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM	1	R-PBGA-B48		5.5 V	1 mm		6 mm		4194304 bit	4.5 V					YES	.000013 Amp	8 mm	45 ns
CY7C1480BV33-250AXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3			250 MHz		Not Qualified	75497472 bit			e4	40	260				3 ns
CY7C1565KV18-450BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0		260		.34 Amp	15 mm	.45 ns
CY62168GE30-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260			8 mm	45 ns
CY62177G30-55BAXI	Infineon Technologies	STANDARD SRAM		48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	2MX16	2M	2.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		8 mm		33554432 bit	2.2 V		e1			YES	.000019 Amp	9.5 mm	55 ns
CY7C1480V33-300AC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel		QUAD		R-PQFP-G100				300 MHz		Not Qualified	75497472 bit									2.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.