Infineon Technologies SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1145KV18-400BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.29 Amp	15 mm	.45 ns
CY7C1474V33-167BGC	Infineon Technologies	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	3.3	2.5/3.3,3.3	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	1MX72	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B209	3	3.6 V	1.96 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220			22 mm	3.4 ns
CY7C1243KV18-450BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	720 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0		220		.33 Amp	15 mm	.45 ns
CY7C1426KV18-300BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	520 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.27 Amp	15 mm	.45 ns
CY14B256LA-ZS25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	262144 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	25 ns
CY7C1361KVE33-133AXM	Infineon Technologies	CACHE SRAM	MILITARY	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	125 Cel		256KX36	256K		-55 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE			260			20 mm	6.5 ns
CY7C25682KV18-550BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	760 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V		e1				.38 Amp	15 mm	.45 ns
CY62137FV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	2097152 bit	2.2 V		e1	20	260		.000004 Amp	8 mm	45 ns
CY7C1550KV18-400BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	2097152 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.32 Amp	15 mm	.45 ns
CY7C1059DV33-12ZSXQ	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX8	1M	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e4	30	260	YES	.02 Amp	18.415 mm	12 ns
CY14B108N-BA20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	524288 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		512KX16	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	8388608 bit	2.7 V		e1	30	260		.01 Amp	10 mm	20 ns
CY14B101MA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	65536 words			3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-G48						Not Qualified	1048576 bit							.005 Amp		45 ns
CY7C1414KV18-250BZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	730 mA	1048576 words	SEPARATE		1.5/1.8,1.8	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			250 MHz		Not Qualified	37748736 bit			e1		260		.26 Amp		.45 ns
CY7C1548KV18-400BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	590 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.00032 Amp	15 mm	.45 ns
CY7C2663KV18-550BZXI	Infineon Technologies	QDR II PLUS SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1090 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel	3-STATE	8MX18	8M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	15 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1			NO	.5 Amp	17 mm	.45 ns
CY7C1485V33-300BZC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	3.14 V	0 Cel		BOTTOM		R-PBGA-B165				300 MHz		Not Qualified	75497472 bit									2.2 ns
CY7C1360C-166AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	3.5 ns
CY14E116L-ZS45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		2MX8	2M		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.194 mm		10.16 mm		16777216 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			18.415 mm	45 ns
CY7C1415KV18-333BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1				.28 Amp	15 mm	.45 ns
CY14E101PA-SF104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V		e3				.00025 Amp	10.2865 mm
CY62147G30-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.000013 Amp		55 ns
CY7C1470BV33-250BZXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3 ns
CY7C1512KV18-333BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	810 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e1	20	260			15 mm	.45 ns
CY14V104LA-BA25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	3 V		e1	30	260	YES	.008 Amp	10 mm	25 ns
CY62162G30-45BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	36 mA	524288 words	COMMON	3		32	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50		1.27 mm	85 Cel	3-STATE	512KX32	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260	YES	.000016 Amp	22 mm	45 ns
CY7C1423KV18-250BZC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.26 Amp	15 mm	.45 ns
CY7C1482V33-300BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	4MX18	4M	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				300 MHz		Not Qualified	75497472 bit									2.2 ns
STK14EC16-TF45ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			52 mA	262144 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3					Not Qualified	4194304 bit			e4	20	260		.003 Amp		45 ns
CY7C2270XV18-633BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1230 mA	1048576 words	COMMON	1.8	1.5,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	633 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		1.23 Amp	15 mm	.45 ns
CY14B102N-ZS20XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			90 mA	131072 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		128KX16	128K		-40 Cel		DUAL		R-PDSO-G44						Not Qualified	2097152 bit					260		.005 Amp		20 ns
CY7C1363C-133BZXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	133 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1	20	260		.04 Amp	15 mm	6.5 ns
CY621472G30-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		DUAL	1	R-PDSO-G44		3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V					YES	.000013 Amp	18.415 mm	45 ns
CY62148G30-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm		4194304 bit	2.2 V				260			20.95 mm	45 ns
CY7C1372KVE33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		1MX18	1M		-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260			20 mm	3.4 ns
CY7C1361C-133AXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e4	40	260		.04 Amp	20 mm	6.5 ns
CY7C1470V33-300AC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel		QUAD		R-PQFP-G100				300 MHz		Not Qualified	75497472 bit									2.2 ns
CY7C1382C-225BGI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	325 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel		BOTTOM		R-PBGA-B119				225 MHz		Not Qualified	18874368 bit							.06 Amp		2.8 ns
CY7C1612KV18-360BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1025 mA	8388608 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	360 MHz	15 mm		150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260	NO	.425 Amp	17 mm	.45 ns
CY62146EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	2.2 V		e1	20	260	YES	.000007 Amp	8 mm	45 ns
CY7C1386F-200BGI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B119				200 MHz		Not Qualified	18874368 bit							.07 Amp		3 ns
CY7C1370B-166BGC	Infineon Technologies	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	524288 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119				166 MHz		Not Qualified	18874368 bit			e0				.03 Amp		3.4 ns
CY14B102N-ZS45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			52 mA	131072 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX16	128K		-40 Cel		DUAL		R-PDSO-G44						Not Qualified	2097152 bit					260		.005 Amp		45 ns
CY62126EV30LL-55BVXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	125 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	1048576 bit	2.2 V		e1	20	260		.00003 Amp	8 mm	55 ns
CY14B104LA-ZS20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	20 ns
CY62177G30-55ZXI	Infineon Technologies	STANDARD SRAM		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP48,.79,20		.5 mm	85 Cel	3-STATE	2MX16	2M	2.2 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		33554432 bit	2.2 V					YES	.000019 Amp	18.4 mm	55 ns
CY14E256LA-ZS25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	262144 bit	4.5 V		e4	20	260	YES	.008 Amp	18.415 mm	25 ns
CY14E101J1-SXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.00015 Amp	4.889 mm
CY7C1373KV33-133AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		1MX18	1M		-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V				260			20 mm	6.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.