Infineon Technologies SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY7C1049G18-15ZSXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

1.8

8

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

512KX8

512K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

2.2 V

1.194 mm

10.16 mm

4194304 bit

1.65 V

e4

260

18.415 mm

10 ns

CY7C1564XV18-450BZC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1445 mA

2097152 words

SEPARATE

1.8

1.5,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

450 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

260

1.445 Amp

15 mm

.45 ns

CY62177EV18LL-70BAXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

2MX16

2M

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

Not Qualified

33554432 bit

e1

260

.000017 Amp

70 ns

CY7C25682KV18-550BZXI

Infineon Technologies

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

760 mA

2097152 words

COMMON

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

550 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

e1

.38 Amp

15 mm

.45 ns

CY7C1568KV18-400BZC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

590 mA

4194304 words

COMMON

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX18

4M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

400 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

220

.32 Amp

15 mm

.45 ns

CY14B104NA-ZS45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

52 mA

262144 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

256KX16

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

e4

20

260

.005 Amp

18.415 mm

45 ns

CY7C1354C-166AXIT

Infineon Technologies

ZBT SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

2.5/3.3,3.3

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

166 MHz

Not Qualified

9437184 bit

e4

40

260

.04 Amp

3.5 ns

CY7C1670KV18-450BZXC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX36

4M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

PIPELINED ARCHITECTURE

e1

40

260

17 mm

.45 ns

CY7C1357C-133AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

250 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.135 V

0 Cel

MATTE TIN

QUAD

1

R-PQFP-G100

3

3.6 V

1.6 mm

133 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

40

260

YES

.04 Amp

20 mm

6.5 ns

CY14B101Q1-LHXI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

10 mA

131072 words

COMMON

3

3/3.3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2.7 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-N8

3

3.6 V

.8 mm

40 MHz

5 mm

Not Qualified

1048576 bit

2.7 V

e4

30

260

NO

.005 Amp

6 mm

CY7C1460KV33-167AXIT

Infineon Technologies

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

1048576 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

85 Cel

1MX36

1M

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

37748736 bit

3.135 V

PIPELINED ARCHITECTURE

e4

260

20 mm

3.4 ns

CY14B101J3-SFXI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

131072 words

3

3

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

3.6 V

2.667 mm

7.4925 mm

Not Qualified

1048576 bit

2.7 V

e3

.00015 Amp

10.2865 mm

CY7C1361C-100AXCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

100 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e4

40

260

.04 Amp

20 mm

8.5 ns

CY62147G30-45BVXAT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

45 ns

CY62137EV30LL-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

2.2 V

e1

20

260

.000003 Amp

8 mm

45 ns

CY7C1061GE30-10BVJXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

10 ns

CY7C1370KVE33-167AXM

Infineon Technologies

ZBT SRAM

MILITARY

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

125 Cel

512KX36

512K

-55 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

18874368 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

3.4 ns

CY7C1061GN30-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY7C2263KV18-550BZXC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

1.8

18

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

2MX18

2M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

13 mm

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e1

15 mm

.45 ns

CY7C1353G-100AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

40

260

20 mm

8 ns

CY14B108L-BA45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

57 mA

1048576 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

1MX8

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

20

260

.01 Amp

10 mm

45 ns

CY62148G18-55ZSXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

1.8

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

PURE TIN

DUAL

R-PDSO-G32

3

2.2 V

1.2 mm

10.16 mm

4194304 bit

1.65 V

260

20.95 mm

55 ns

CY14C101Q2A-S104XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

131072 words

2.5

2.5

8

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

3

2.6 V

1.727 mm

3.8985 mm

Not Qualified

1048576 bit

2.4 V

e4

30

260

.00015 Amp

4.889 mm

CY62128ELL-55ZAXET

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e4

20

260

.00003 Amp

11.8 mm

55 ns

CY7C1460KV33-167AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

1048576 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

1MX36

1M

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

37748736 bit

3.135 V

PIPELINED ARCHITECTURE

e4

260

20 mm

CY7C1367C-166AXCT

Infineon Technologies

NICKEL PALLADIUM GOLD

3

e4

40

260

CY14B101NA-ZSP45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

52 mA

65536 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.7 V

e3

20

260

.005 Amp

22.415 mm

45 ns

CY7C107D-10VXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

85 Cel

3-STATE

1MX1

1M

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J28

3

5.5 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

30

260

.003 Amp

18.415 mm

10 ns

CY14B108N-BA45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

57 mA

524288 words

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

20

260

.01 Amp

10 mm

45 ns

CY14B116N-ZSP45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

16777216 bit

2.7 V

260

22.415 mm

45 ns

CY7C1474V33-300BX

Infineon Technologies

ZBT SRAM

COMMERCIAL

209

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

COMMON

2.5/3.3,3.3

72

GRID ARRAY

BGA209,11X19,40

SRAMs

1 mm

70 Cel

3-STATE

1MX72

1M

3.14 V

0 Cel

BOTTOM

R-PBGA-B209

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY62177G30-55ZXIT

Infineon Technologies

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP48,.79,20

.5 mm

85 Cel

3-STATE

2MX16

2M

2.2 V

-40 Cel

PURE TIN

DUAL

1

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

33554432 bit

2.2 V

YES

.000019 Amp

18.4 mm

55 ns

CY62148G30-45SXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

PURE TIN

DUAL

R-PDSO-G32

3

3.6 V

2.997 mm

11.303 mm

4194304 bit

2.2 V

260

20.446 mm

45 ns

CY7C1480V33-300BZC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

3.14 V

0 Cel

BOTTOM

R-PBGA-B165

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY62147G18-55BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

2.2 V

1 mm

6 mm

4194304 bit

1.65 V

e1

260

YES

.000013 Amp

8 mm

55 ns

CY62146G-45ZSXA

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

256KX16

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

5.5 V

1.194 mm

10.16 mm

4194304 bit

4.5 V

e4

260

18.415 mm

45 ns

CY7C1032-14JC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

SYNCHRONOUS

235 mA

65536 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

64KX18

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

QUAD

S-PQCC-J52

Not Qualified

1179648 bit

e0

.01 Amp

14 ns

CY7C1019DL-12ZXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

32

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G32

3

Not Qualified

1048576 bit

e3

20

260

.0012 Amp

12 ns

CY62147G30-55ZSXET

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

125 Cel

256KX16

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

4194304 bit

2.2 V

e4

260

18.415 mm

55 ns

CY7C1565KV18-500BZXI

Infineon Technologies

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1210 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

500 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

20

260

.36 Amp

15 mm

.45 ns

CY14B104NA-ZS45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

52 mA

262144 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

256KX16

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

e4

20

260

.005 Amp

18.415 mm

45 ns

CY7C1020D-10VXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

SYNCHRONOUS

80 mA

32768 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

32KX16

32K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J44

3

100 MHz

Not Qualified

524288 bit

e4

40

260

.003 Amp

10 ns

CY7C1061GN30-10ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

30

260

18.4 mm

10 ns

CY7C1472BV33-250BZI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

4194304 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

3.14 V

-40 Cel

TIN LEAD SILVER

BOTTOM

R-PBGA-B165

3.6 V

1.4 mm

250 MHz

15 mm

Not Qualified

75497472 bit

3.135 V

PIPELINED ARCHITECTURE

e0

17 mm

3 ns

CY7C1512KV18-250BZI

Infineon Technologies

QDR II SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

650 mA

4194304 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V

e0

20

260

15 mm

.45 ns

CY7C25652KV18-400BZXI

Infineon Technologies

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1000 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

400 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

.32 Amp

15 mm

.45 ns

CY14E101Q2A-S104XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4 mA

131072 words

5

5

8

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

Not Qualified

1048576 bit

4.5 V

e4

30

260

.00015 Amp

4.889 mm

CY7C1372D-250BZXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

1048576 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

250 MHz

13 mm

Not Qualified

18874368 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.07 Amp

15 mm

2.6 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.