Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY62147GE30-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.000013 Amp		55 ns
CY14B104LA-ZSP20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260			22.415 mm	20 ns
CY7C1350G-133AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	4 ns
CY7C2264XV18-450BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1445 mA	1048576 words	SEPARATE	1.8	1.5,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		1.445 Amp	15 mm	.45 ns
CY7C1362C-200BZXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	220 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.04 Amp	15 mm	3 ns
CY7C1525KV18-300BZC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	730 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX9	8M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e0	20	220			15 mm	.45 ns
CY62157G18-55BVXA	Infineon Technologies	STANDARD SRAM																													TIN SILVER COPPER				3									e1
CY14C512Q2A-SXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	SEPARATE	2.5		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.4 V	-40 Cel		DUAL		R-PDSO-G8		2.6 V	1.727 mm	40 MHz	3.8985 mm		524288 bit	2.4 V					NO	.00015 Amp	4.889 mm
CY7C1386D-167BZI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	275 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220		.07 Amp	15 mm	3.4 ns
CY7C1474V25-167BGXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	2.5	1.8/2.5,2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	1MX72	1M	2.38 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	2.625 V	1.96 mm	167 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e1	20	260			22 mm	3.4 ns
CY62147G30-45B2XIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM	1	R-PBGA-B48		3.6 V	1 mm		6 mm		4194304 bit	2.2 V					YES	.000013 Amp	8 mm	45 ns
CY7C1061GN30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		16777216 bit	2.2 V		e3	30	260			22.415 mm	10 ns
CY7C1446AV25-167BGXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	335 mA	524288 words	COMMON	2.5	1.8/2.5,2.5	72	GRID ARRAY	BGA209,11X19,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	2.375 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	2.625 V	1.96 mm	167 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e1	20	260	YES	.12 Amp	22 mm	3.4 ns
CY7C1069GN30-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	3 V		e1		260			8 mm	10 ns
CY7C1472BV33-250BZXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	250 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3 ns
CY62147GN30-45B2XI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1		260			8 mm	45 ns
CY7C1312KV18-250BZXI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	560 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.25 Amp	15 mm	.45 ns
CY7C1020V33-20VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44						Not Qualified	524288 bit			e0				.001 Amp		20 ns
CY7C25442KV18-333BZXI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1		220			15 mm	.45 ns
CY14E116N-ZSP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G54		5.5 V	1.2 mm		10.16 mm		16777216 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			22.415 mm	25 ns
CY7C1513KV18-250BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	220			15 mm	.45 ns
CY7C1021CV33-12ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.63 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e4	20	260		.01 Amp	18.415 mm	12 ns
CY7C1051H30-10ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	125 Cel	3-STATE	512KX16	512K	1 V	-40 Cel		DUAL	1	R-PDSO-G44		3.6 V	1.194 mm		10.16 mm		8388608 bit	2.2 V					YES	.05 Amp	18.415 mm	10 ns
CY7C1061GE18-15ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	2.2 V	1.2 mm		10.16 mm		16777216 bit	1.65 V				260			22.415 mm	15 ns
CY14E101Q3A-SF104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V		e3				.00015 Amp	10.2865 mm
CY7C1472BV25-250AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	450 mA	4194304 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	4MX18	4M	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	250 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3 ns
CY62167G30-45ZXA	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	36 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP48,47,20		.5 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V					YES	.000016 Amp	18.4 mm	45 ns
CY7C1470BV33-167BZXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	167 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3.4 ns
CY62157EV30LL-55ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.2 V		e4	20	260	YES	.00003 Amp	18.415 mm	55 ns
CY7C0451V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX40	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				100 MHz		Not Qualified	2621440 bit							.01 Amp		4.5 ns
CY7C1382KV33-200AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	158 mA	1048576 words	COMMON	3.3		18	FLATPACK, LOW PROFILE	QFP100,.63X.87		.65 mm	70 Cel	3-STATE	1MX18	1M	3.135 V	0 Cel	PURE TIN	QUAD	1	R-PQFP-G100	3	3.63 V	1.6 mm	200 MHz	14 mm		18874368 bit	3.135 V	PIPE LINED ARCHITECTURE			260	YES	.075 Amp	20 mm	3 ns
CY621472GN30-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V				260			18.415 mm	45 ns
CY62146ESL-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.2 V	IT CAN ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e4	20	260		.000007 Amp	18.415 mm	45 ns
STK14EC8-BF25I	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V		e4					10 mm	25 ns
CY7C1061GE30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	2.2 V			30	260			22.415 mm	10 ns
CY7C1315KV18-250BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	590 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e1	30	260		.25 Amp	15 mm	.45 ns
CY7C1061GE30-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260			8 mm	10 ns
CY7C1612KV18-250BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	800 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260	NO	.37 Amp	17 mm	.45 ns
CY14B101NA-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		65536 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.7 V	1.2 mm		6 mm	Not Qualified	1048576 bit	3.6 V		e1	30	260			10 mm	25 ns
CY7C1315KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	590 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	220		.25 Amp	15 mm	.45 ns
CY7C1515KV18-250BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	680 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C2568XV18-600BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	910 mA	2097152 words	COMMON	1.8	1.5,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	600 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.91 Amp	15 mm	.45 ns
CY7C1360C-200BGCT	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			200 MHz		Not Qualified	9437184 bit			e0		220		.04 Amp		3 ns
STK14EC16-UF15ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			75 mA	262144 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3					Not Qualified	4194304 bit			e3	20	260		.003 Amp		15 ns
CY14B116S-BZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		512KX32	512K		-40 Cel		BOTTOM		R-PBGA-B165		3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			17 mm	45 ns
CY62147GE30-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V					YES	.000013 Amp	18.415 mm	45 ns
CY7C1011G30-12ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words				16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		128KX16	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		2097152 bit	2.2 V		e4		260			18.415 mm	12 ns
CY7C1350G-133AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.