Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY621472GN30-45ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V				260			18.415 mm	45 ns
CY7C2168KV18-550BZC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e0				.34 Amp	15 mm	.45 ns
CY7C1462AV25-200AC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	340 mA	2097152 words	COMMON	2.5	1.8/2.5,2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	2MX18	2M	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0				.1 Amp	20 mm	3 ns
CY14B108N-ZSP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	57 mA	524288 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		512KX16	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	20	260		.01 Amp	22.415 mm	45 ns
CY7C1570KV18BZC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX36	2M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					15 mm	.45 ns
CY7C1061G18-15ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	2.2 V	1.2 mm		10.16 mm		16777216 bit	1.65 V				260			22.415 mm	15 ns
CY7C2563XV18-600BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	2097152 words	SEPARATE	1.8	1.5,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	600 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	235		1.1 Amp	15 mm	.45 ns
CY62147G30-55ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	4194304 bit							.000013 Amp		55 ns
CY14E101Q1A-S104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.00015 Amp	4.889 mm
CY7C1354C-166AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	3.5 ns
CY7C1484V33-300AC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		2.5/3.3,3.3	36	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel		QUAD		R-PQFP-G100				300 MHz		Not Qualified	75497472 bit									2.2 ns
CY62147GE30-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V				260	YES	.000013 Amp	18.415 mm	45 ns
CY14B101Q3A-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V		e3				.00015 Amp	10.2865 mm
CY7C1061GE-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm		12 mm		16777216 bit	4.5 V				260			18.4 mm	10 ns
CY7C1460AV25-200AC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	340 mA	1048576 words	COMMON	2.5	1.8/2.5,2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	1MX36	1M	2.38 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	37748736 bit	2.375 V		e0				.1 Amp	20 mm	3 ns
CY7C1263KV18-400BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	660 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	220		.31 Amp	15 mm	.45 ns
CY7C1568KV18-450BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.34 Amp	15 mm	.45 ns
CY7C1643KV18-450BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	940 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	8MX18	8M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0		260		.46 Amp	17 mm	.45 ns
CY62162G18-45BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		32	GRID ARRAY, HEAT SINK/SLUG				1.27 mm	85 Cel		512KX32	512K		-40 Cel		BOTTOM		R-PBGA-B119		2.2 V	2.4 mm		14 mm		16777216 bit	1.65 V							22 mm	45 ns
CY14B101MA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	65536 words			3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-G48						Not Qualified	1048576 bit							.005 Amp		25 ns
CY7C1414KV18-250BZXCT	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	730 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.26 Amp	15 mm	.45 ns
CY7C2663KV18-450BZXC	Infineon Technologies	QDR II PLUS SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	940 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1			NO	.46 Amp	17 mm	.45 ns
CY14B104K-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260		.003 Amp	22.415 mm	25 ns
CY14B104NA-ZS20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	20 ns
CY62148G-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	2.997 mm		11.303 mm		4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.4465 mm	45 ns
CY7C1382D-250AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	250 MHz	16 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.07 Amp	22 mm	2.6 ns
CY7C1386F-200BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				200 MHz		Not Qualified	18874368 bit							.07 Amp		3 ns
CY14V116F7-BZ30XIES	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX8	2M		-40 Cel		BOTTOM		R-PBGA-B165		3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V							17 mm
CY7C1482BV33-167BZXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	4194304 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			167 MHz		Not Qualified	75497472 bit			e1	20	260				3.4 ns
CY7C0452V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40		SRAMs	1 mm	70 Cel	3-STATE	128KX40	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	5242880 bit							.01 Amp		3.5 ns
CY7C1514KV18-333BZI	Infineon Technologies	QDR II SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	990 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e0	20	260			15 mm	.45 ns
CY14V101PS-SF108XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G16		3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V							10.2865 mm
CY14B101MA-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		64KX16	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.005 Amp	22.415 mm	25 ns
CY62167GN-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	36 mA	1048576 words	COMMON	5		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8		.5 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel		DUAL	1	R-PDSO-G48		5.5 V	1.2 mm		12 mm		16777216 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	YES	.000016 Amp	18.4 mm	45 ns
CY7C1441KVE33-133AXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	170 mA	1048576 words	COMMON	3.3		36	FLATPACK, LOW PROFILE	QFP100,.63X.87			.65 mm	70 Cel	3-STATE	1MX36	1M		0 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm		37748736 bit	3.135 V	FLOW-THROUGH	e4		260	YES	.08 Amp	20 mm	6.5 ns
CY14B104LA-ZSP20XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260			22.415 mm	20 ns
CY7C1303BV25-167BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	SEPARATE	2.5	1.5/1.8,2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.4 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.6 V	1.4 mm	167 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e1	20	260		.24 Amp	15 mm	.1 ns
CY14C101PA-SF104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V		e3				.00025 Amp	10.2865 mm
CY14B256PA-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	PURE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	262144 bit	2.7 V				260		.00025 Amp	10.2865 mm
CY7C1514KV18-333BZXC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	990 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e1	20	260			15 mm	.45 ns
CY14B116N-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32			.8 mm	85 Cel	3-STATE	1MX16	1M	2.7 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	2.7 V					YES	.00065 Amp	22.415 mm	25 ns
CY7C1363C-100AJXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e3	40	260		.04 Amp	20 mm	8.5 ns
CY7C1480BV25-167BZXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	167 MHz	15 mm	Not Qualified	75497472 bit	2.375 V		e1	20	260			17 mm	3.4 ns
CY7C1061GN30-10BVJXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1	30	260			8 mm	10 ns
CY7C09579V-100BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	172	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		32KX36	32K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B172	3	3.465 V	1.25 mm		15 mm		1179648 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	40	260			15 mm	12.5 ns
CY14B102N-ZS45XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			75 mA	131072 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	125 Cel		128KX16	128K		-40 Cel		DUAL		R-PDSO-G44						Not Qualified	2097152 bit					260		.005 Amp		45 ns
STK14CA8C-3C35TR	Infineon Technologies
STK14C88C-C35ITR	Infineon Technologies

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.