Infineon Technologies SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1361C-133BGXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1	20	260		.04 Amp	22 mm	6.5 ns
CY7C1447AV25-133BGXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		72	GRID ARRAY				1 mm	85 Cel		512KX72	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	2.625 V	1.96 mm		14 mm	Not Qualified	37748736 bit	2.375 V	FLOW-THROUGH ARCHITECTURE	e1	20	260			22 mm	6.5 ns
CY62147G30-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.2 V				260	YES	.000013 Amp	18.415 mm	45 ns
CY14C101I-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V		e3		260		.00025 Amp	10.2865 mm
CY14B101KA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	70 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	8	SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm		7.5057 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	15.875 mm	25 ns
CY14B108L-ZSP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	1048576 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	8	SRAMs	.8 mm	85 Cel		1MX8	1M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e3	20	260		.006 Amp	22.415 mm	25 ns
CY7C1041G30-10ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	125 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V		e4		260			18.415 mm	10 ns
CY7C1565KV18-450BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1100 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.34 Amp	15 mm	.45 ns
CY7C1315KV18-250BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	590 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		e1	30	260		.25 Amp	15 mm	.45 ns
STK14EC16-TF15ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			75 mA	262144 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3					Not Qualified	4194304 bit			e4	20	260		.003 Amp		15 ns
CY14B104LA-ZSP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e3	20	260			22.415 mm	45 ns
CY7C1515KV18-333BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	850 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
CY7C1423KV18-300BZC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.27 Amp	15 mm	.45 ns
CY7C2663KV18-550BZXC	Infineon Technologies	QDR II PLUS SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1090 mA	8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1			NO	.5 Amp	17 mm	.45 ns
CY7C1061G-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	5.5 V	1 mm		6 mm		16777216 bit	4.5 V		e1		260			8 mm	10 ns
CY7C1356C-225BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V		e1	20	260		.04 Amp	22 mm	2.8 ns
CY14B101LA-ZS20XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	20 ns
CY14C256I-SFXIT	Infineon Technologies	NON-VOLATILE SRAM MODULE	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words		2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	262144 bit	2.4 V		e3					10.2865 mm
CY7C1625KV18-300BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8		9	GRID ARRAY					85 Cel		16MX9	16M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165		1.9 V				Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1
CY62137FV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	2097152 bit	2.2 V		e1	20	260		.000004 Amp	8 mm	45 ns
CY62136FV30LL-55ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	125 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000012 Amp	18.415 mm	55 ns
CY7C1380KV33-200AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	178 mA	524288 words	COMMON	3.3		36	FLATPACK, LOW PROFILE	QFP100,.63X.87			.65 mm	70 Cel	3-STATE	512KX36	512K	3.135 V	0 Cel	PURE TIN	QUAD	1	R-PQFP-G100	3	3.63 V	1.6 mm	200 MHz	14 mm		18874368 bit	3.135 V	PIPE LINED ARCHITECTURE			260	YES	.08 Amp	20 mm	3 ns
CY7C1011G30-10ZSXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words				16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		128KX16	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		2097152 bit	2.2 V		e4		260			18.415 mm	10 ns
CY7C1011-25VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44						Not Qualified	2097152 bit			e0				.002 Amp		25 ns
CY7C1415KV18-250BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	640 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.26 Amp	15 mm	.45 ns
CY7C1415KV18-300BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	730 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	37748736 bit	1.7 V		e1	20	260		.27 Amp	15 mm	.45 ns
CY7C1079DV33-12B2XI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	250 mA	4194304 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	4MX8	4M	2 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		8 mm	Not Qualified	33554432 bit	3 V						.05 Amp	9.5 mm	12 ns
CY7C1565KV18BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX36	2M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm		13 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					15 mm	.45 ns
CY7C1318KV18-250BZI	Infineon Technologies	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	380 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.25 Amp	15 mm	.45 ns
CY7C1354C-250BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.04 Amp	22 mm	2.8 ns
CY14B116N-BZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B165		3.6 V	1.4 mm		15 mm		16777216 bit	2.7 V							17 mm	45 ns
CY7C1512KV18-300BZC	Infineon Technologies	QDR II SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	750 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V	e0	20	260			15 mm	.45 ns
CY7C1360C-200BGXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	200 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.04 Amp	22 mm	3 ns
CY7C1041GN30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J44	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1382AV25-100AC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				100 MHz		Not Qualified	18874368 bit			e0				.015 Amp		5 ns
CY7C1382BV25-150BZC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	190 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.38 V	0 Cel		BOTTOM		R-PBGA-B165				150 MHz		Not Qualified	18874368 bit							.03 Amp		3.8 ns
CY62137EV30LL-45ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000003 Amp	18.415 mm	45 ns
CY7C1010DV33-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	3.6 V	2.75 mm		10.16 mm	Not Qualified	2097152 bit	3 V		e4	40	260		.01 Amp	23.495 mm	10 ns
CY7C1372B-166BGC	Infineon Technologies	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	230 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119				166 MHz		Not Qualified	18874368 bit			e0				.03 Amp		3.4 ns
CY7C1474V33-200BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	3.3	2.5/3.3,3.3	72	GRID ARRAY	BGA209,11X19,40		SRAMs	1 mm	85 Cel	3-STATE	1MX72	1M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B209	3	3.63 V	1.96 mm	200 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			22 mm	3 ns
CY7C1472BV25-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	4194304 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	4MX18	4M	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	167 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3.4 ns
CY7C1320KV18-333BZXC	Infineon Technologies	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	560 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.27 Amp	15 mm	.45 ns
CY7C1460AV25-200AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	385 mA	1048576 words	COMMON	2.5	1.8/2.5,2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	1MX36	1M	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e3	40	260		.12 Amp	20 mm	3.2 ns
CY7C1370KV33-167BZXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		13 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e1		260			15 mm	3.4 ns
CY62137FV30LL-45ZSXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000004 Amp	18.415 mm	45 ns
CY7C1472BV33-200BZXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260			17 mm	3 ns
CY7C1387D-200BZI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	300 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	200 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		220		.07 Amp	15 mm	3 ns
CY62147GN18-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.2 V	1 mm		6 mm		4194304 bit	1.65 V		e1		260			8 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.