Infineon Technologies SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY14B104M-ZSP25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

256KX16

256K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

e3

20

260

.005 Amp

22.415 mm

25 ns

CY7C1387F-167BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

275 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

167 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

CY7C1321V18-166BZC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

524288 words

COMMON

1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

18

1 mm

70 Cel

3-STATE

512KX36

512K

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

1.9 V

1.35 mm

166 MHz

13 mm

18874368 bit

1.7 V

YES

15 mm

CY7C1462AV25-167AC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

305 mA

2097152 words

COMMON

2.5

1.8/2.5,2.5

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

2MX18

2M

2.38 V

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

2.625 V

1.6 mm

167 MHz

14 mm

Not Qualified

37748736 bit

2.375 V

e0

.1 Amp

20 mm

3.4 ns

CY7C1270XV18-633BZXC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1230 mA

1048576 words

COMMON

1.8

1.5,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

1MX36

1M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

633 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

1.23 Amp

15 mm

.45 ns

STK14CA8C-3C

Infineon Technologies

NON-VOLATILE SRAM

CY62167G30-45ZXAT

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP48,47,20

.5 mm

125 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

DUAL

1

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

YES

18.4 mm

45 ns

CY7C25632KV18-550BZXI

Infineon Technologies

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

920 mA

4194304 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

550 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

.38 Amp

15 mm

.45 ns

CY7C1520KV18-250BZXC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

530 mA

2097152 words

COMMON

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

20

260

15 mm

.45 ns

CY621472E30LL-45ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

256KX16

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

4194304 bit

2.2 V

e4

20

260

18.415 mm

45 ns

CY14E256I-SFXIT

Infineon Technologies

NON-VOLATILE SRAM MODULE

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

5.5 V

2.667 mm

7.4925 mm

Not Qualified

262144 bit

4.5 V

e3

10.2865 mm

CY14B101J2-SXI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

3

3.6 V

1.727 mm

3.8985 mm

Not Qualified

1048576 bit

2.7 V

e4

20

260

.00015 Amp

4.889 mm

CY7C2262XV18-366BZXC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

970 mA

2097152 words

SEPARATE

1.8

1.5,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX18

2M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

366 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

.97 Amp

15 mm

.45 ns

CY7C1472BV25-167AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

400 mA

4194304 words

COMMON

2.5

2.5

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

4MX18

4M

2.38 V

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

2.625 V

1.6 mm

167 MHz

14 mm

Not Qualified

75497472 bit

2.375 V

PIPELINED ARCHITECTURE

e3

40

260

20 mm

3.4 ns

CY14B108N-ZSP20XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

524288 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

512KX16

512K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

2.7 V

e3

20

260

.01 Amp

22.415 mm

20 ns

CY7C1061G18-15ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G54

3

2.2 V

1.2 mm

10.16 mm

16777216 bit

1.65 V

260

22.415 mm

15 ns

CY14B101MA-ZSP45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

52 mA

65536 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.7 V

e3

20

260

.005 Amp

22.415 mm

45 ns

CY7C1568KV18-400BZXCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

590 mA

4194304 words

COMMON

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX18

4M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

400 MHz

Not Qualified

75497472 bit

e1

20

260

.32 Amp

.45 ns

CY7C1360C-166BGXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

166 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

3.5 ns

CY7C136E-25NXCT

Infineon Technologies

MULTI-PORT SRAM

COMMERCIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

275 mA

2048 words

COMMON

5

8

FLATPACK

QFP52,.52SQ

.65 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

QUAD

2

S-PQFP-G52

5.5 V

2.5 mm

10 mm

16384 bit

4.5 V

.015 Amp

10 mm

25 ns

CY14B116S-BZ25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

15 mm

16777216 bit

2.7 V

e1

260

17 mm

25 ns

CY14B102N-ZS20XCT

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

65 mA

131072 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

128KX16

128K

0 Cel

DUAL

R-PDSO-G44

Not Qualified

2097152 bit

260

.005 Amp

20 ns

CY7C1270KV18-400BZXC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

690 mA

1048576 words

COMMON

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

1MX36

1M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

400 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

.31 Amp

15 mm

.45 ns

CY14E064L-25XCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

3

Not Qualified

65536 bit

e4

20

260

.0025 Amp

25 ns

CY7C1329H-133AXCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

225 mA

65536 words

COMMON

3.3

2.5/3.3,3.3

32

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

64KX32

64K

3.14 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

133 MHz

14 mm

Not Qualified

2097152 bit

3.135 V

PIPELINED ARCHITECTURE

e4

40

260

.04 Amp

20 mm

4 ns

CY14E101Q2A-SXI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4 mA

131072 words

5

5

8

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

3

5.5 V

1.727 mm

3.8985 mm

Not Qualified

1048576 bit

4.5 V

e4

260

.00015 Amp

4.889 mm

CY7C1353C-100AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e4

20 mm

6.5 ns

CY7C1520KV18-300BZXI

Infineon Technologies

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

600 mA

2097152 words

COMMON

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

300 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

20

260

15 mm

.45 ns

CY7C1471BV33-133BZI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

3.14 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

133 MHz

15 mm

Not Qualified

75497472 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e0

220

17 mm

6.5 ns

CY7C1381KVE33-133AXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

85 Cel

512KX36

512K

-40 Cel

PURE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

18874368 bit

3.135 V

260

20 mm

6.5 ns

CY7C1382BV25-167BZI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

230 mA

1048576 words

COMMON

2.5

2.5

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

1MX18

1M

2.38 V

-40 Cel

BOTTOM

R-PBGA-B165

167 MHz

Not Qualified

18874368 bit

.03 Amp

3.4 ns

CY7C1218F-166AC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

240 mA

32768 words

COMMON

3.3

3.3

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

32KX36

32K

3.14 V

0 Cel

QUAD

R-PQFP-G100

166 MHz

Not Qualified

1179648 bit

.04 Amp

3.5 ns

CY7C1329H-133AXC

Infineon Technologies

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

225 mA

65536 words

COMMON

3.3

2.5/3.3,3.3

32

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

64KX32

64K

3.14 V

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

133 MHz

14 mm

Not Qualified

2097152 bit

3.135 V

PIPELINED ARCHITECTURE

e3

40

260

.04 Amp

20 mm

4 ns

CY7C1327G-166AXCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

240 mA

262144 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

256KX18

256K

3.14 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

166 MHz

Not Qualified

4718592 bit

e4

40

260

.045 Amp

3.5 ns

CY62167GE18-55BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

55 ns

CY7C1472BV33-167AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

450 mA

4194304 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

4MX18

4M

3.14 V

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

167 MHz

14 mm

Not Qualified

75497472 bit

3.135 V

PIPELINED ARCHITECTURE

e3

40

260

20 mm

3.4 ns

CY7C1420KV18-250BZCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

490 mA

1048576 words

COMMON

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

1MX36

1M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

260

.26 Amp

15 mm

.45 ns

CY7C1418KV18-250BZCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

430 mA

2097152 words

COMMON

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX18

2M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

260

.26 Amp

15 mm

.45 ns

CY7C0852V25

Infineon Technologies

CY7C1387F-200BGXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

200 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

3.4 ns

CY7C1387F-200BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

200 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

STK14EC16-BF15TR

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

70 mA

262144 words

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

70 Cel

256KX16

256K

0 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.003 Amp

15 ns

CY7C25652KV18-500BZC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1210 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

500 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

235

.36 Amp

15 mm

.45 ns

CY7C1370KV25-167BZC

Infineon Technologies

ZBT SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

524288 words

2.5

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

512KX36

512K

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

2.625 V

1.4 mm

13 mm

18874368 bit

2.375 V

PIPELINED ARCHITECTURE

e0

20

260

15 mm

3.4 ns

CY7C1613KV18-300BZXC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

8MX18

8M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

300 MHz

15 mm

Not Qualified

150994944 bit

1.7 V

PIPELINED ARCHITECTURE

e1

260

17 mm

.45 ns

CY7C1020D-10VXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

32KX16

32K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J44

3

5.5 V

3.7592 mm

100 MHz

10.16 mm

Not Qualified

524288 bit

4.5 V

e4

40

260

.003 Amp

28.575 mm

10 ns

CY7C1315KV18-250BZI

Infineon Technologies

QDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

590 mA

524288 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

512KX36

512K

1.7 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

18874368 bit

1.7 V

e0

20

220

.25 Amp

15 mm

.45 ns

CY14B256KA-SP25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

3

8

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

.635 mm

85 Cel

3-STATE

32KX8

32K

2.7 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G48

3

3.6 V

2.794 mm

7.5057 mm

262144 bit

2.7 V

e4

30

260

YES

.005 Amp

15.875 mm

25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.