Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
325 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
225 MHz |
Not Qualified |
18874368 bit |
.06 Amp |
2.8 ns |
||||||||||||||||||||||||
Infineon Technologies |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
460 mA |
4194304 words |
SEPARATE |
1.5/1.8,1.8 |
9 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4MX9 |
4M |
1.7 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
250 MHz |
Not Qualified |
37748736 bit |
e0 |
260 |
.26 Amp |
.45 ns |
||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
44 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
65536 words |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
1048576 bit |
.005 Amp |
45 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e3 |
40 |
260 |
.04 Amp |
20 mm |
2.8 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e4 |
20 mm |
8 ns |
|||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
410 mA |
1048576 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
2.38 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
250 MHz |
14 mm |
Not Qualified |
37748736 bit |
2.375 V |
e0 |
.1 Amp |
20 mm |
2.6 ns |
|||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
1048576 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
8 |
SRAMs |
.8 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
8388608 bit |
2.7 V |
e3 |
20 |
260 |
.006 Amp |
22.415 mm |
25 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e4 |
20 |
260 |
.015 Amp |
18.415 mm |
12 ns |
|||||||||||
|
Infineon Technologies |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1210 mA |
2097152 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
500 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.36 Amp |
15 mm |
.45 ns |
||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX32 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
8388608 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
6.5 ns |
|||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
52 |
QCCJ |
SQUARE |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
J BEND |
PARALLEL |
SYNCHRONOUS |
250 mA |
65536 words |
COMMON |
5 |
5 |
18 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
64KX18 |
64K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-XQCC-J52 |
Not Qualified |
1179648 bit |
e0 |
.015 Amp |
14 ns |
|||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
8.5 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, HEAT SINK/SLUG |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e1 |
20 |
260 |
.04 Amp |
22 mm |
2.8 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
32KX16 |
32K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
524288 bit |
3 V |
e4 |
20 |
260 |
.015 Amp |
18.415 mm |
12 ns |
|||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B165 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
275 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
167 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3.4 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
32 |
GRID ARRAY |
1.27 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
14 mm |
16777216 bit |
2.2 V |
e1 |
260 |
22 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
QDR II SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
750 mA |
4194304 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
1.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
300 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V |
e1 |
20 |
260 |
15 mm |
.45 ns |
|||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.7 V |
e3 |
20 |
260 |
22.415 mm |
20 ns |
||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
3.6 V |
1.4 mm |
250 MHz |
13 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.07 Amp |
15 mm |
2.6 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
305 mA |
2097152 words |
COMMON |
2.5 |
1.8/2.5,2.5 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
2.38 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
2.625 V |
1.4 mm |
133 MHz |
15 mm |
Not Qualified |
75497472 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE |
e1 |
20 |
260 |
17 mm |
6.5 ns |
|||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
3.6 V |
1.4 mm |
200 MHz |
13 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.07 Amp |
15 mm |
3 ns |
||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.5 ns |
|||||||||||
Infineon Technologies |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1210 mA |
1048576 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
1.7 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
550 MHz |
13 mm |
Not Qualified |
37748736 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
220 |
.36 Amp |
15 mm |
.45 ns |
|||||||||||
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
3.6 V |
1.4 mm |
250 MHz |
13 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
220 |
.07 Amp |
15 mm |
2.6 ns |
||||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
75 mA |
262144 words |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
4194304 bit |
.003 Amp |
15 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
166 MHz |
Not Qualified |
2097152 bit |
.04 Amp |
3.5 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
45 mA |
262144 words |
COMMON |
3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
PURE TIN |
DUAL |
1 |
R-PDSO-J44 |
3 |
3.6 V |
3.7592 mm |
10.16 mm |
4194304 bit |
2.2 V |
260 |
YES |
.008 Amp |
28.575 mm |
10 ns |
|||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
44 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
GULL WING |
70 mA |
131072 words |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
128KX16 |
128K |
-40 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
2097152 bit |
260 |
.005 Amp |
20 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
1.8 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
PURE TIN |
DUAL |
1 |
R-PDSO-G44 |
3 |
2.2 V |
1.194 mm |
10.16 mm |
4194304 bit |
1.65 V |
260 |
YES |
.000013 Amp |
18.415 mm |
55 ns |
|||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
AUTOMOTIVE |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
90 mA |
262144 words |
3/3.3 |
8 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
125 Cel |
256KX8 |
256K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
260 |
.005 Amp |
20 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.2 V |
e4 |
20 |
260 |
YES |
.00003 Amp |
18.4 mm |
55 ns |
|||||||||||
Infineon Technologies |
NON-VOLATILE SRAM |
COMMERCIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
50 mA |
262144 words |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
4194304 bit |
.003 Amp |
45 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
AUTOMOTIVE |
44 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
GULL WING |
90 mA |
131072 words |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
128KX16 |
128K |
-40 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
2097152 bit |
260 |
.005 Amp |
25 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
4718592 bit |
e4 |
40 |
260 |
.04 Amp |
8 ns |
||||||||||||||||||
|
Infineon Technologies |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
790 mA |
2097152 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
300 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
15 mm |
.45 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
209 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
72 |
GRID ARRAY |
BGA209,11X19,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
1MX72 |
1M |
3.14 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B209 |
3 |
3.6 V |
1.96 mm |
167 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
22 mm |
3.4 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
400 mA |
4194304 words |
COMMON |
2.5 |
2.5 |
18 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
2.38 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
2.625 V |
1.4 mm |
167 MHz |
15 mm |
Not Qualified |
75497472 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
17 mm |
3.4 ns |
|||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
4 mA |
65536 words |
SEPARATE |
5 |
8 |
SMALL OUTLINE |
SOP8,.25 |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
-40 Cel |
DUAL |
R-PDSO-G8 |
5.5 V |
1.727 mm |
40 MHz |
3.8985 mm |
524288 bit |
4.5 V |
NO |
.00015 Amp |
4.889 mm |
|||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP32,.4 |
SRAMs |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
2.54 mm |
7.5 mm |
Not Qualified |
1048576 bit |
2.7 V |
e3 |
20 |
260 |
.005 Amp |
20.726 mm |
25 ns |
|||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
500 mA |
4194304 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
|||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
95 mA |
2097152 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
16777216 bit |
2.7 V |
260 |
.00075 Amp |
18.415 mm |
25 ns |
|||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G48 |
3 |
2.2 V |
1.2 mm |
12 mm |
16777216 bit |
1.65 V |
260 |
18.4 mm |
55 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
20 |
260 |
.00003 Amp |
18.4 mm |
55 ns |
||||||||||||
Infineon Technologies |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
790 mA |
2097152 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
1.9 V |
1.4 mm |
300 MHz |
13 mm |
Not Qualified |
75497472 bit |
1.7 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
260 |
15 mm |
.45 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.