Infineon Technologies SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY7C1382C-225AI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

325 mA

1048576 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

QUAD

R-PQFP-G100

225 MHz

Not Qualified

18874368 bit

.06 Amp

2.8 ns

STK14CA8C-3C35ITR

Infineon Technologies

CY7C1426KV18-250BZCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

460 mA

4194304 words

SEPARATE

1.5/1.8,1.8

9

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX9

4M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

250 MHz

Not Qualified

37748736 bit

e0

260

.26 Amp

.45 ns

CY14B101MA-ZS45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

65536 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

1048576 bit

.005 Amp

45 ns

CY7C1356C-225AXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

250 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

512KX18

512K

3.14 V

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

225 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

e3

40

260

.04 Amp

20 mm

2.8 ns

CY7C1353C-133AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e4

20 mm

8 ns

CY7C1484V33-300BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1460AV25-250AC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

410 mA

1048576 words

COMMON

2.5

1.8/2.5,2.5

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

1MX36

1M

2.38 V

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

2.625 V

1.6 mm

250 MHz

14 mm

Not Qualified

37748736 bit

2.375 V

e0

.1 Amp

20 mm

2.6 ns

CY14B108L-ZSP25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

8

SRAMs

.8 mm

85 Cel

1MX8

1M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

2.7 V

e3

20

260

.006 Amp

22.415 mm

25 ns

CY7C1021DV33-12ZSXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

125 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.63 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e4

20

260

.015 Amp

18.415 mm

12 ns

CY7C1565KV18-500BZXC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1210 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

500 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

20

260

.36 Amp

15 mm

.45 ns

CY7C1365C-133AXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

250 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

32

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

256KX32

256K

3.14 V

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

8388608 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

40

260

.04 Amp

20 mm

6.5 ns

CY7C1032-14YMB

Infineon Technologies

STANDARD SRAM

MILITARY

52

QCCJ

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

J BEND

PARALLEL

SYNCHRONOUS

250 mA

65536 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

125 Cel

3-STATE

64KX18

64K

4.5 V

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-XQCC-J52

Not Qualified

1179648 bit

e0

.015 Amp

14 ns

CY7C1363C-100AJXC

Infineon Technologies

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

180 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW THROUGH ARCHITECTURE

e3

40

260

.04 Amp

20 mm

8.5 ns

CY7C1354C-225BGXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY, HEAT SINK/SLUG

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

225 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

e1

20

260

.04 Amp

22 mm

2.8 ns

CY7C1020DV33-12ZSXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

32768 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

125 Cel

3-STATE

32KX16

32K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

524288 bit

3 V

e4

20

260

.015 Amp

18.415 mm

12 ns

CY7C1472V33-300BZC

Infineon Technologies

ZBT SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX18

4M

3.14 V

0 Cel

BOTTOM

R-PBGA-B165

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1387F-167BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

275 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

167 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

CY7C1062GN30-10BGXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

32

GRID ARRAY

1.27 mm

85 Cel

512KX32

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

14 mm

16777216 bit

2.2 V

e1

260

22 mm

10 ns

CY7C1512KV18-300BZXI

Infineon Technologies

QDR II SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

750 mA

4194304 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

300 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V

e1

20

260

15 mm

.45 ns

CY14B101NA-ZSP20XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.7 V

e3

20

260

22.415 mm

20 ns

CY7C1372D-250BZXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

1048576 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

250 MHz

13 mm

Not Qualified

18874368 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.07 Amp

15 mm

2.6 ns

CY7C1471BV25-133BZXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

305 mA

2097152 words

COMMON

2.5

1.8/2.5,2.5

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

2.38 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

2.625 V

1.4 mm

133 MHz

15 mm

Not Qualified

75497472 bit

2.375 V

FLOW-THROUGH ARCHITECTURE

e1

20

260

17 mm

6.5 ns

CY7C1386D-200BZXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

200 MHz

13 mm

Not Qualified

18874368 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.07 Amp

15 mm

3 ns

STK14CA8C-3CTR

Infineon Technologies

NON-VOLATILE SRAM

CY7C1327G-166AXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

240 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

256KX18

256K

3.14 V

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.63 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

40

260

.04 Amp

20 mm

3.5 ns

CY7C1265KV18-550BZC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1210 mA

1048576 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

1MX36

1M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

550 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

220

.36 Amp

15 mm

.45 ns

CY7C1370D-250BZI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

250 MHz

13 mm

Not Qualified

18874368 bit

3.135 V

PIPELINED ARCHITECTURE

e0

220

.07 Amp

15 mm

2.6 ns

STK14EC16-BF15ITR

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

75 mA

262144 words

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.003 Amp

15 ns

CY7C1334F-166AC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

240 mA

65536 words

COMMON

3.3

3.3

32

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

64KX32

64K

3.14 V

0 Cel

QUAD

R-PQFP-G100

166 MHz

Not Qualified

2097152 bit

.04 Amp

3.5 ns

CY7C1041GN30-10VXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

45 mA

262144 words

COMMON

3

16

SMALL OUTLINE

SOJ44,.44

1.27 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

PURE TIN

DUAL

1

R-PDSO-J44

3

3.6 V

3.7592 mm

10.16 mm

4194304 bit

2.2 V

260

YES

.008 Amp

28.575 mm

10 ns

CY14B102N-ZS20XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

70 mA

131072 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

128KX16

128K

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

2097152 bit

260

.005 Amp

20 ns

CY62147GE18-55ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

1.8

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

.8 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

PURE TIN

DUAL

1

R-PDSO-G44

3

2.2 V

1.194 mm

10.16 mm

4194304 bit

1.65 V

260

YES

.000013 Amp

18.415 mm

55 ns

CY14B102L-BA20XAT

Infineon Technologies

NON-VOLATILE SRAM

AUTOMOTIVE

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

90 mA

262144 words

3/3.3

8

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

125 Cel

256KX8

256K

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

2097152 bit

260

.005 Amp

20 ns

CY62157EV30LL-55ZXET

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

125 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.2 V

e4

20

260

YES

.00003 Amp

18.4 mm

55 ns

STK14EC16-BF45TR

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

50 mA

262144 words

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

70 Cel

256KX16

256K

0 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.003 Amp

45 ns

CY14B102N-ZS25XAT

Infineon Technologies

NON-VOLATILE SRAM

AUTOMOTIVE

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

90 mA

131072 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

125 Cel

128KX16

128K

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

2097152 bit

260

.005 Amp

25 ns

CY7C1353G-100AXCT

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

205 mA

262144 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

256KX18

256K

3.14 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

100 MHz

Not Qualified

4718592 bit

e4

40

260

.04 Amp

8 ns

CY7C1515KV18-300BZXC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

790 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

300 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

20

260

15 mm

.45 ns

CY7C1474BV33-167BGXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

209

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

450 mA

1048576 words

COMMON

3.3

2.5/3.3,3.3

72

GRID ARRAY

BGA209,11X19,40

SRAMs

1 mm

70 Cel

3-STATE

1MX72

1M

3.14 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B209

3

3.6 V

1.96 mm

167 MHz

14 mm

Not Qualified

75497472 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

22 mm

3.4 ns

CY7C1472BV25-167BZXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

400 mA

4194304 words

COMMON

2.5

2.5

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX18

4M

2.38 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

2.625 V

1.4 mm

167 MHz

15 mm

Not Qualified

75497472 bit

2.375 V

PIPELINED ARCHITECTURE

e1

20

260

17 mm

3.4 ns

CY14E512Q2A-SXI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4 mA

65536 words

SEPARATE

5

8

SMALL OUTLINE

SOP8,.25

1.27 mm

85 Cel

3-STATE

64KX8

64K

4.5 V

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.727 mm

40 MHz

3.8985 mm

524288 bit

4.5 V

NO

.00015 Amp

4.889 mm

CY14B101LA-SZ25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP32,.4

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

2.54 mm

7.5 mm

Not Qualified

1048576 bit

2.7 V

e3

20

260

.005 Amp

20.726 mm

25 ns

CY7C1472BV33-200AXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

500 mA

4194304 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

4MX18

4M

3.14 V

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

200 MHz

14 mm

Not Qualified

75497472 bit

3.135 V

PIPELINED ARCHITECTURE

e3

40

260

20 mm

3 ns

CY14B116K-ZS25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

95 mA

2097152 words

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

2MX8

2M

-40 Cel

PURE TIN

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

16777216 bit

2.7 V

260

.00075 Amp

18.415 mm

25 ns

CY62167G18-55ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

2.2 V

1.2 mm

12 mm

16777216 bit

1.65 V

260

18.4 mm

55 ns

CY62128ELL-55ZXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

SRAMs

.5 mm

125 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e3

20

260

.00003 Amp

18.4 mm

55 ns

CY7C1515KV18-300BZC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

790 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

300 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

260

15 mm

.45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.