Infineon Technologies SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY7C1314KV18-250BZXI

Infineon Technologies

QDR II SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

524288 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX36

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

13 mm

18874368 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

15 mm

.45 ns

CY7C1470BV25-167AXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

400 mA

2097152 words

COMMON

2.5

2.5

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

2MX36

2M

2.38 V

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

2.625 V

1.6 mm

167 MHz

14 mm

Not Qualified

75497472 bit

2.375 V

PIPELINED ARCHITECTURE

e3

40

260

20 mm

3.4 ns

CY62157EV30LL-45ZSXAT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

8388608 bit

2.2 V

e4

20

260

YES

.000008 Amp

18.415 mm

45 ns

CY7C1011G30-10BAJXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

125 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

10 ns

CY7C1565XV18-633BZXC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1660 mA

2097152 words

SEPARATE

1.8

1.5,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

633 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

1.66 Amp

15 mm

.45 ns

CY14B104M-ZSP25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

256KX16

256K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

e3

20

260

.005 Amp

22.415 mm

25 ns

CY7C1472BV33-250BZXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

4194304 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX18

4M

3.14 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

250 MHz

15 mm

Not Qualified

75497472 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

17 mm

3 ns

CY7C1378B-200AC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

220 mA

262144 words

COMMON

3.3

3.3

32

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

256KX32

256K

3.14 V

0 Cel

QUAD

R-PQFP-G100

200 MHz

Not Qualified

8388608 bit

.035 Amp

3.2 ns

CY7C1470BV25-167AXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

400 mA

2097152 words

COMMON

2.5

2.5

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

2MX36

2M

2.38 V

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

2.625 V

1.6 mm

167 MHz

14 mm

Not Qualified

75497472 bit

2.375 V

PIPELINED ARCHITECTURE

e3

40

260

20 mm

3.4 ns

CY7C0431V18-100BBC

Infineon Technologies

MULTI-PORT SRAM

COMMERCIAL

676

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

900 mA

131072 words

COMMON

1.8

1.8

20

GRID ARRAY

BGA676,26X26,40

SRAMs

1 mm

70 Cel

3-STATE

128KX20

128K

1.71 V

0 Cel

BOTTOM

4

S-PBGA-B676

100 MHz

Not Qualified

2621440 bit

.01 Amp

4.5 ns

CY62168G30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

2MX8

2M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

45 ns

CY14B101LA-BA25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

128KX8

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

30

260

.005 Amp

10 mm

25 ns

CY7C1462AV33-250AXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

475 mA

2097152 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

2MX18

2M

3.14 V

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.63 V

1.6 mm

250 MHz

14 mm

Not Qualified

37748736 bit

3.135 V

PIPELINED ARCHITECTURE

e3

40

260

.12 Amp

20 mm

2.6 ns

CY7C1470BV25-250BZXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

450 mA

2097152 words

COMMON

2.5

2.5

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

2.38 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

2.625 V

1.4 mm

250 MHz

15 mm

Not Qualified

75497472 bit

2.375 V

PIPELINED ARCHITECTURE

e1

20

260

17 mm

3 ns

CY7C1312KV18-333BZC

Infineon Technologies

QDR II SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

690 mA

1048576 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

1MX18

1M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

333 MHz

13 mm

Not Qualified

18874368 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

220

.27 Amp

15 mm

.45 ns

CY7C1061G18-15BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

15 ns

CY7C1061GN30-10ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

1MX16

1M

-40 Cel

Pure Tin (Sn)

DUAL

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

16777216 bit

2.2 V

30

260

22.415 mm

10 ns

CY7C1512KV18-250BZIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

650 mA

4194304 words

SEPARATE

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V

e0

20

260

15 mm

.45 ns

CY14C101Q3A-SF104XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

131072 words

2.5

2.5

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

2.6 V

2.667 mm

7.4925 mm

Not Qualified

1048576 bit

2.4 V

e3

.00015 Amp

10.2865 mm

CY7C1526KV18-333BZXC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

600 mA

8388608 words

SEPARATE

1.8

1.5/1.8,1.8

9

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

8MX9

8M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

333 MHz

13 mm

Not Qualified

75497472 bit

1.7 V

PIPELINED ARCHITECTURE

e1

20

260

.29 Amp

15 mm

.45 ns

CY62177G30-55BAXIT

Infineon Technologies

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX16

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

8 mm

33554432 bit

2.2 V

e1

YES

.000019 Amp

9.5 mm

55 ns

CY7C1021D-10ZSXA

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G44

3

5.5 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

30

260

.003 Amp

18.415 mm

10 ns

CY14B116N-Z30XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

260

18.4 mm

30 ns

CY7C1021CV33-10ZSXA

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

90 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.63 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

2.97 V

e4

20

260

.005 Amp

18.415 mm

10 ns

CY7C1471BV33-133AXCT

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

305 mA

2097152 words

COMMON

3.3

2.5/3.3,3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

2MX36

2M

3.14 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

133 MHz

14 mm

Not Qualified

75497472 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e4

40

260

20 mm

6.5 ns

CY14E116S-BZ25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

5

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B165

5.5 V

1.4 mm

15 mm

16777216 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

17 mm

25 ns

CY14B512Q3-SFXIT

Infineon Technologies

NON-VOLATILE SRAM

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

65536 words

COMMON

3

8

SMALL OUTLINE

SOP16,.4

1.27 mm

85 Cel

3-STATE

64KX8

64K

2.7 V

-40 Cel

DUAL

1

R-PDSO-G16

3.6 V

2.667 mm

40 MHz

7.4925 mm

524288 bit

2.7 V

NO

.005 Amp

10.2865 mm

CY7C1362C-166BZXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

180 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

512KX18

512K

3.14 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B165

3

3.6 V

1.4 mm

13 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

15 mm

3.5 ns

CY7C1650KV18-450BZC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

36

GRID ARRAY, LOW PROFILE

1 mm

70 Cel

4MX36

4M

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

15 mm

150994944 bit

1.7 V

BURST ARCHITECTURE

e0

260

17 mm

CY7C0451V18-167BBC

Infineon Technologies

MULTI-PORT SRAM

COMMERCIAL

676

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1300 mA

65536 words

COMMON

1.8

1.8

40

GRID ARRAY

BGA676,26X26,40

SRAMs

1 mm

70 Cel

3-STATE

64KX40

64K

1.71 V

0 Cel

BOTTOM

4

S-PBGA-B676

167 MHz

Not Qualified

2621440 bit

.01 Amp

3.5 ns

CY7C1351G-100AXCT

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

205 mA

131072 words

COMMON

3.3

2.5/3.3,3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

128KX36

128K

3.14 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

100 MHz

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW THROUGH ARCHITECTURE

e4

40

260

.04 Amp

20 mm

8 ns

CY7C1482BV33-167AXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

450 mA

4194304 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

4MX18

4M

3.14 V

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

167 MHz

Not Qualified

75497472 bit

e4

40

260

3.4 ns

CY7C1482V33-300BZC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX18

4M

3.14 V

0 Cel

BOTTOM

R-PBGA-B165

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1382AV25-150AC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

280 mA

1048576 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

150 MHz

Not Qualified

18874368 bit

e0

.015 Amp

3.8 ns

CY14B101MA-ZSP25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

64KX16

64K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.7 V

e3

20

260

.005 Amp

22.415 mm

25 ns

CY7C1019DL-12ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G32

3

Not Qualified

1048576 bit

e3

20

260

.0012 Amp

12 ns

CY62157GE30-45ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

512KX16

512K

3 V

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

8388608 bit

2.2 V

YES

.0000065 Amp

18.4 mm

45 ns

CY14E256I-SFXI

Infineon Technologies

NON-VOLATILE SRAM MODULE

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

5.5 V

2.667 mm

7.4925 mm

Not Qualified

262144 bit

4.5 V

e3

10.2865 mm

CY7C1019DL-10ZXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

32

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G32

3

Not Qualified

1048576 bit

e3

20

260

.0012 Amp

10 ns

CY7C4122KV13-933FCXC

Infineon Technologies

QDR SRAM

COMMERCIAL

361

HBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.3

18

GRID ARRAY, HEAT SINK/SLUG

1 mm

70 Cel

8MX18

8M

0 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B361

3

1.34 V

2.765 mm

21 mm

150994944 bit

1.26 V

e1

21 mm

CY7C1320KV18-250BZI

Infineon Technologies

DDR SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

460 mA

524288 words

COMMON

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

512KX36

512K

1.7 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

18874368 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

220

.25 Amp

15 mm

.45 ns

CY7C1487V33-100BX

Infineon Technologies

STANDARD SRAM

COMMERCIAL

209

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

COMMON

2.5/3.3,3.3

72

GRID ARRAY

BGA209,11X19,40

SRAMs

1 mm

70 Cel

3-STATE

1MX72

1M

3.14 V

0 Cel

BOTTOM

R-PBGA-B209

100 MHz

Not Qualified

75497472 bit

8.5 ns

CY62165E-3XWI

Infineon Technologies

STANDARD SRAM

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1024 words

COMMON

16

UNCASED CHIP

DIE OR CHIP

85 Cel

1KX16

1K

-40 Cel

UNSPECIFIED

1

X-XUUC-N

5.5 V

16384 bit

1.65 V

NO

CY14B104LA-ZSP25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

512KX8

512K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

e3

20

260

22.415 mm

25 ns

CY7C1061GE18-15BVJXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

15 ns

CY7C1019DL-12VXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-J32

3

Not Qualified

1048576 bit

e4

40

260

.0012 Amp

12 ns

CY14B101MA-ZS25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

65536 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

1048576 bit

.005 Amp

25 ns

CY7C1470V25-300AC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

1.8/2.5,2.5

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

2MX36

2M

2.38 V

0 Cel

QUAD

R-PQFP-G100

300 MHz

Not Qualified

75497472 bit

2.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.