Infineon Technologies SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY7C1413KV18-250BZCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

470 mA

2097152 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX18

2M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

250 MHz

Not Qualified

37748736 bit

e0

220

.26 Amp

.45 ns

CY7C1362C-1XWI

Infineon Technologies

STANDARD SRAM

NOT SPECIFIED

NOT SPECIFIED

CY14B102N-ZS45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

52 mA

131072 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

128KX16

128K

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

2097152 bit

260

.005 Amp

45 ns

CY14B101P-SFXAT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

10 mA

131072 words

3/3.3

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

1048576 bit

.005 Amp

STK14C88C-35C35M

Infineon Technologies

NON-VOLATILE SRAM

GOLD

1

e4

CY14C064PA-SFXI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

SEPARATE

2.5

8

SMALL OUTLINE

SOP16,.4

1.27 mm

85 Cel

3-STATE

8KX8

8K

2.4 V

-40 Cel

DUAL

1

R-PDSO-G16

2.6 V

2.667 mm

40 MHz

7.4925 mm

65536 bit

2.4 V

NO

.00025 Amp

10.2865 mm

CY7C1353C-133AXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

85 Cel

256KX18

256K

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e4

20 mm

8 ns

CY7C1386F-167BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

275 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

167 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

3.4 ns

CY62157G30-45ZSXAT

Infineon Technologies

STANDARD SRAM

NICKEL PALLADIUM GOLD

3

e4

CY7C1480BV33-167BZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

450 mA

2097152 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

167 MHz

Not Qualified

75497472 bit

e1

20

260

3.4 ns

CY7C1462AV33-250BZXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

475 mA

2097152 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX18

2M

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

3.63 V

1.4 mm

15 mm

Not Qualified

37748736 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.12 Amp

17 mm

2.6 ns

CY7C1061GN30-10BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY62136ESL-45ZSXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3

2.5/3.3/5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

128KX16

128K

1 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

2097152 bit

2.2 V

IT ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY

e4

20

260

.000003 Amp

18.415 mm

45 ns

CY7C1061D-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

5.5 V

1 mm

8 mm

16777216 bit

4.5 V

9.5 mm

10 ns

CY7C1314KV18-250BZCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

670 mA

524288 words

SEPARATE

1.8

1.5/1.8,1.8

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

512KX36

512K

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

18874368 bit

1.7 V

PIPELINED ARCHITECTURE

e0

20

220

.25 Amp

15 mm

.45 ns

CY14E116N-Z30XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

5.5 V

1.2 mm

12 mm

16777216 bit

4.5 V

260

18.4 mm

30 ns

CY7C1362C-200AXI

Infineon Technologies

QDR SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

220 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

512KX18

512K

3.14 V

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e3

40

260

.04 Amp

20 mm

3 ns

CY62128ELL-55SXET

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G32

3

5.5 V

2.997 mm

11.303 mm

Not Qualified

1048576 bit

4.5 V

e4

20

260

.00003 Amp

20.4465 mm

55 ns

CY621472G30-55ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.000013 Amp

55 ns

CY7C1480V33-300BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

300 MHz

Not Qualified

75497472 bit

2.2 ns

STK14CA8C-3C35

Infineon Technologies

CY7C1480BV33-250BZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

2097152 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

250 MHz

Not Qualified

75497472 bit

e1

20

260

3 ns

CY7C1387F-250BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

250 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

CY7C1614KV18-250BZC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

1.8

36

GRID ARRAY

70 Cel

4MX36

4M

0 Cel

TIN LEAD SILVER

BOTTOM

R-PBGA-B165

1.9 V

Not Qualified

150994944 bit

1.7 V

PIPELINED ARCHITECTURE

e0

CY7C1440KV33-250AXC

Infineon Technologies

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

1048576 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

1MX36

1M

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

3.6 V

1.6 mm

14 mm

37748736 bit

3.135 V

PIPELINED ARCHITECTURE

e4

260

20 mm

CY7C1360C-166AXCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

2.5/3.3,3.3

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

R-PQFP-G100

3

166 MHz

Not Qualified

9437184 bit

e4

40

260

.04 Amp

3.5 ns

CY7C4122KV13-933FCXI

Infineon Technologies

QDR SRAM

INDUSTRIAL

361

HBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

1.3

18

GRID ARRAY, HEAT SINK/SLUG

1 mm

85 Cel

8MX18

8M

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B361

3

1.34 V

2.765 mm

21 mm

150994944 bit

1.26 V

e1

21 mm

CY7C106B-35VCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

125 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

2 V

0 Cel

DUAL

R-PDSO-J28

Not Qualified

1048576 bit

.00025 Amp

35 ns

CY7C1426KV18-250BZC

Infineon Technologies

QDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

460 mA

4194304 words

SEPARATE

1.8

1.5/1.8,1.8

9

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

4MX9

4M

1.7 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

e0

20

260

.26 Amp

15 mm

.45 ns

CY14C101Q3A-SFXIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

131072 words

2.5

2.5

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

2.6 V

2.667 mm

7.4925 mm

Not Qualified

1048576 bit

2.4 V

e3

.00015 Amp

10.2865 mm

CY14B102L-ZS20XAT

Infineon Technologies

NON-VOLATILE SRAM

AUTOMOTIVE

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

90 mA

262144 words

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

125 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

2097152 bit

260

.005 Amp

20 ns

CY7C0430V18-167BBC

Infineon Technologies

MULTI-PORT SRAM

COMMERCIAL

676

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1300 mA

65536 words

COMMON

1.8

1.8

20

GRID ARRAY

BGA676,26X26,40

SRAMs

1 mm

70 Cel

3-STATE

64KX20

64K

1.71 V

0 Cel

BOTTOM

4

S-PBGA-B676

167 MHz

Not Qualified

1310720 bit

.01 Amp

3.5 ns

CY7C1382C-225BZI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

325 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

BOTTOM

R-PBGA-B165

225 MHz

Not Qualified

18874368 bit

.06 Amp

2.8 ns

STK14C88C-5C35M

Infineon Technologies

GOLD

1

e4

220

CY7C1372B-166AC

Infineon Technologies

ZBT SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

230 mA

1048576 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

166 MHz

Not Qualified

18874368 bit

e0

.03 Amp

3.4 ns

STK14EC16-UF15TR

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

54

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

262144 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

70 Cel

256KX16

256K

0 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

Not Qualified

4194304 bit

e3

20

260

.003 Amp

15 ns

CY7C1061G-10BV1XIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

10 ns

CY7C1392KV18-250BZXC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

370 mA

2097152 words

SEPARATE

1.8

1.5/1.8,1.8

8

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX8

2M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

250 MHz

13 mm

Not Qualified

16777216 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

.25 Amp

15 mm

.45 ns

CY7C1418KV18-300BZXC

Infineon Technologies

DDR SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

460 mA

2097152 words

COMMON

1.8

1.5/1.8,1.8

18

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX18

2M

1.7 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B165

3

1.9 V

1.4 mm

300 MHz

13 mm

Not Qualified

37748736 bit

1.7 V

PIPELINED ARCHITECTURE

e1

30

260

.27 Amp

15 mm

.45 ns

CY14B116S-BZ45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B165

3.6 V

1.4 mm

15 mm

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

17 mm

45 ns

CY14B102L-ZSP45XAT

Infineon Technologies

NON-VOLATILE SRAM

AUTOMOTIVE

54

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

75 mA

262144 words

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

125 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G54

Not Qualified

2097152 bit

260

.005 Amp

45 ns

CY7C1474V25-200BGC

Infineon Technologies

ZBT SRAM

COMMERCIAL

209

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1048576 words

COMMON

2.5

1.8/2.5,2.5

72

GRID ARRAY

BGA209,11X19,40

SRAMs

1 mm

70 Cel

3-STATE

1MX72

1M

2.38 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B209

3

2.625 V

1.96 mm

200 MHz

14 mm

Not Qualified

75497472 bit

2.375 V

PIPELINED ARCHITECTURE

e0

220

22 mm

3 ns

CY7C1061G-10BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

10 ns

CY14B101NA-ZSP45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

52 mA

65536 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

64KX16

64K

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.7 V

e3

20

260

.005 Amp

22.415 mm

45 ns

CY14B256Q3-SFXIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

32768 words

3

3

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

3.6 V

2.667 mm

7.4925 mm

Not Qualified

262144 bit

2.7 V

e3

.005 Amp

10.2865 mm

CY62157G30-45ZSXA

Infineon Technologies

STANDARD SRAM

NICKEL PALLADIUM GOLD

3

e4

CY14B102N-ZS25XCT

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

65 mA

131072 words

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

128KX16

128K

0 Cel

DUAL

R-PDSO-G44

Not Qualified

2097152 bit

260

.005 Amp

25 ns

STK17TA8-RF35I

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

3/3.3

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

SRAMs

.635 mm

85 Cel

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3

Not Qualified

e3

20

260

.003 Amp

35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.