NXP Semiconductors SRAM 805

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SCM63P733ATQ133R	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4 ns
PCF8571P	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5		8	IN-LINE			2.54 mm	85 Cel		128X8	128	1 V	-40 Cel		DUAL	1	R-PDIP-T8		6 V	4.2 mm		7.62 mm	Not Qualified	1024 bit	2.5 V	I2C BUS INTERFACE				NO		9.5 mm
SCM6343YJ12A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-J44		3.63 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	28.575 mm	12 ns
74HC670PW	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		6 V	1.1 mm		4.4 mm	Not Qualified	16 bit	2 V							5 mm	59 ns
PCF8570CT-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE				85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel		DUAL	1	R-PDSO-G8		6 V				Not Qualified	2048 bit	2.5 V	I2C BUS INTERFACE				NO
N74F670D-T	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4X4	4		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	2.65 mm		7.5 mm	Not Qualified	16 bit	4.5 V					NO		10.3 mm	12.5 ns
PCF8570T/F5,118	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		256X8	256		-40 Cel		DUAL		R-PDSO-G8		6 V	2.65 mm		7.5 mm		2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE						7.55 mm
SCM69C232TQ20	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		4096 words		3.3		64	FLATPACK, LOW PROFILE			.65 mm	85 Cel		4KX64	4K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		14 mm		262144 bit	3.1 V							20 mm	9 ns
SCM63F733ATQ10	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	10 ns
74HCT670NB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE				125 Cel	3-STATE	4X4	4		-40 Cel		DUAL	1	R-PDIP-T16		5.5 V				Not Qualified	16 bit	4.5 V					NO			60 ns
935154920112	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		256X8	256		-40 Cel		DUAL		R-PDSO-G8		6 V	2.65 mm		7.5 mm		2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE						7.55 mm
SCM6343TS11A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	18.41 mm	11 ns
S54S200F	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE				125 Cel	3-STATE	256X1	256		-55 Cel		DUAL	1	R-GDIP-T16		5.5 V				Not Qualified	256 bit	4.5 V					NO			70 ns
74HC670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V		e4					6.2 mm	59 ns
82S212/BWA	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	9	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X9	256		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified				e0
SCM6343TS12AR	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	18.41 mm	12 ns
74HCT670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		e4			NO		9.9 mm	60 ns
PCF8571TD	NXP Semiconductors	STANDARD SRAM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS		128 words				8	SMALL OUTLINE				70 Cel		128X8	128		-25 Cel		DUAL		R-PDSO-G8		6 V				Not Qualified	1024 bit	2.5 V
74HC670DB-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V		e4					6.2 mm	59 ns
SCM6341ZP12A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY			1.27 mm	85 Cel		128KX24	128K		-40 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		3145728 bit	3 V							22 mm	12 ns
8602301FA	NXP Semiconductors	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	1	IN-LINE	FL16,.3	SRAMs	1.27 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDFP-F16		5.5 V				Qualified	4096 bit	4.5 V								120 ns
SCM69C433TQ15R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		64	FLATPACK, LOW PROFILE			.65 mm	85 Cel		16KX64	16K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		14 mm		1048576 bit	3.1 V							20 mm	8 ns
SCM6343TS11AR	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	18.41 mm	11 ns
HEC4505BD	NXP Semiconductors	STANDARD SRAM	MILITARY	14	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		1	IN-LINE				125 Cel	3-STATE	64X1	64	3 V	-55 Cel		DUAL	1	R-CDIP-T14		15 V				Not Qualified	64 bit	3 V					NO			660 ns
MCM44A256BSG15	NXP Semiconductors	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO					NO LEAD	PARALLEL	ASYNCHRONOUS	1750 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80(UNSPEC)	SRAMs		70 Cel	3-STATE	256KX36	256K		0 Cel		SINGLE		R-PSMA-N80						Not Qualified	9437184 bit									15 ns
SCM6343YJ12AR	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-J44		3.63 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	28.575 mm	12 ns
10145I	NXP Semiconductors	STANDARD SRAM	OTHER	16		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE				85 Cel	OPEN-EMITTER	16X4	16		-30 Cel		DUAL	1	R-GDIP-T16						Not Qualified	64 bit						NO			13 ns
PCF8570T/F5,512	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G8	2	6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4		260	NO	.0000004 Amp	7.55 mm	3400 ns
SCM69C433TQ15	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		64	FLATPACK, LOW PROFILE			.65 mm	85 Cel		16KX64	16K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		14 mm		1048576 bit	3.1 V							20 mm	8 ns
PCF8570T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel		DUAL	1	R-PDSO-G8		6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE		40	260	NO	.0000004 Amp	7.55 mm
5962-86052013A	NXP Semiconductors	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883		NO LEAD	SERIAL	SYNCHRONOUS		256 words		5		8	CHIP CARRIER				125 Cel		256X8	256		-55 Cel		QUAD		S-XQCC-N28		5.25 V				Not Qualified	2048 bit	4.75 V
MCM44A256BSG17	NXP Semiconductors	CACHE TAG SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO					NO LEAD	PARALLEL	ASYNCHRONOUS	1750 mA	262144 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM80(UNSPEC)	SRAMs		70 Cel	3-STATE	256KX36	256K		0 Cel		SINGLE		R-PSMA-N80						Not Qualified	9437184 bit									17 ns
5962-8605201WX	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel		DUAL		R-PDIP-T22		5.25 V				Not Qualified	2048 bit	4.75 V
PCF8570P/F5,112	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO	.0000004 Amp	9.5 mm
82S16/BEA	NXP Semiconductors	CACHE SRAM	MILITARY	16		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE				125 Cel		256X1	256		-55 Cel		DUAL		R-CDIP-T16		5.5 V				Not Qualified	256 bit	4.5 V								70 ns
SCM6323ATS12AR	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	1048576 bit							.005 Amp		12 ns
SCM6341ZP15A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY			1.27 mm	85 Cel		128KX24	128K		-40 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		3145728 bit	3 V							22 mm	15 ns
PCF8571PN	NXP Semiconductors	STANDARD SRAM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words				8	IN-LINE			2.54 mm	70 Cel		128X8	128		-25 Cel		DUAL		R-PDIP-T8		6 V	4.2 mm		7.62 mm	Not Qualified	1024 bit	2.5 V							9.5 mm
PCF8583T-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel	TOTEM POLE	256X8	256	1 V	-40 Cel		DUAL	1	R-PDSO-G8		6 V	2.65 mm		7.5 mm	Not Qualified	2048 bit	2.5 V					NO		7.55 mm	3400 ns
74F219AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.2 mm		7.62 mm	Not Qualified	64 bit	4.5 V					NO		19.025 mm	8 ns
SCM6946TS8	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS			GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3.135 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0					18.41 mm	8 ns
5962-8605201WA	NXP Semiconductors	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BIPOLAR	MIL-STD-883		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE				125 Cel		256X8	256		-55 Cel	TIN LEAD	DUAL		R-PDIP-T22		5.25 V				Not Qualified	2048 bit	4.75 V		e0
74HC670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm		7.62 mm	Not Qualified	16 bit	2 V		e4			NO		21.6 mm	59 ns
N74F670D	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE	SOP16,.4	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4X4	4		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	2.65 mm		7.5 mm	Not Qualified	16 bit	4.5 V					NO		10.3 mm	12.5 ns
N74F219AD	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	SMALL OUTLINE	SOP16,.25	SRAMs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	64 bit	4.5 V					NO		9.9 mm	8 ns
SCM69C432TQ20R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		16	FLATPACK, LOW PROFILE			.65 mm	85 Cel		64KX16	64K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		14 mm		1048576 bit	3.1 V							20 mm	8 ns
PCF8570TD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G8		6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4	40	260	NO	.0000004 Amp	7.55 mm	3400 ns
74HC670N	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm		7.62 mm	Not Qualified	16 bit	2 V		e4			NO		21.6 mm	59 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.