Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
255 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
3.63 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.97 V |
.01 Amp |
28.575 mm |
11 ns |
||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
1 |
R-PDSO-G16 |
1 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
30 |
260 |
NO |
9.9 mm |
60 ns |
||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
1 |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
2 V |
e4 |
30 |
260 |
NO |
9.9 mm |
59 ns |
|||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
.005 Amp |
12 ns |
||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
MILITARY |
18 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX1 |
4K |
-55 Cel |
DUAL |
R-XDIP-T16 |
5.5 V |
Qualified |
4096 bit |
4.5 V |
120 ns |
|||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
TTL |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
DUAL |
1 |
R-PDSO-G16 |
5.5 V |
Not Qualified |
64 bit |
4.5 V |
NO |
8 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
TTL |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
DUAL |
1 |
R-PDSO-G16 |
5.5 V |
Not Qualified |
64 bit |
4.5 V |
NO |
8 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
262144 words |
COMMON |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
4194304 bit |
3 V |
YES |
.01 Amp |
18.41 mm |
15 ns |
||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
256X8 |
256 |
-40 Cel |
DUAL |
R-PDSO-G8 |
6 V |
2.65 mm |
7.5 mm |
2048 bit |
2.5 V |
2-WIRE I2C SERIAL INTERFACE |
7.55 mm |
|||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
MILITARY |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
64 words |
5 |
1 |
IN-LINE |
2.54 mm |
125 Cel |
3-STATE |
64X1 |
64 |
3 V |
-55 Cel |
DUAL |
1 |
R-GDIP-T14 |
15 V |
5.08 mm |
7.62 mm |
Not Qualified |
64 bit |
4.5 V |
NO |
660 ns |
|||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
MILITARY |
22 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
TTL |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
8 |
IN-LINE |
125 Cel |
256X8 |
256 |
-55 Cel |
DUAL |
R-CDIP-T22 |
5.25 V |
2048 bit |
4.75 V |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
190 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
.005 Amp |
10 ns |
||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
DUAL |
R-PDSO-G16 |
6 V |
1.1 mm |
4.4 mm |
Not Qualified |
16 bit |
2 V |
5 mm |
59 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
256X8 |
256 |
-40 Cel |
DUAL |
R-PDSO-G8 |
6 V |
2.65 mm |
7.5 mm |
2048 bit |
2.5 V |
2-WIRE I2C SERIAL INTERFACE |
7.55 mm |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
2 V |
e4 |
NO |
9.9 mm |
59 ns |
||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
MILITARY |
16 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
IN-LINE |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
DUAL |
1 |
R-CDIP-T16 |
5.25 V |
Not Qualified |
64 bit |
4.75 V |
NO |
50 ns |
||||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
135 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
.005 Amp |
15 ns |
||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE, SHRINK PITCH |
SSOP16,.3 |
Other Memory ICs |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
30 |
260 |
6.2 mm |
60 ns |
|||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
MILITARY |
16 |
DFP |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
BIPOLAR |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
1 |
FLATPACK |
125 Cel |
256X1 |
256 |
-55 Cel |
DUAL |
R-XDFP-F16 |
5.25 V |
Not Qualified |
256 bit |
4.75 V |
||||||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
240 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
3.63 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.97 V |
.01 Amp |
28.575 mm |
15 ns |
||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
OPEN-DRAIN |
256X8 |
256 |
1 V |
-40 Cel |
DUAL |
1 |
R-PDIP-T8 |
6 V |
4.2 mm |
7.62 mm |
Not Qualified |
2048 bit |
2.5 V |
I2C BUS INTERFACE |
NO |
9.5 mm |
||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
OTHER |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
ECL |
-5.2 V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
165 mA |
16 words |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
85 Cel |
OPEN-EMITTER |
16X4 |
16 |
-30 Cel |
TIN LEAD |
DUAL |
1 |
R-GDIP-T16 |
Not Qualified |
64 bit |
e0 |
NO |
13 ns |
|||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
TTL |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G16 |
e0 |
|||||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
240 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
3.63 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.97 V |
.01 Amp |
28.575 mm |
15 ns |
||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
1 |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
2 V |
e4 |
30 |
260 |
NO |
9.9 mm |
59 ns |
|||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE, SHRINK PITCH |
SSOP16,.3 |
Other Memory ICs |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
6.2 mm |
60 ns |
|||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
MILITARY |
28 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
BIPOLAR |
MIL-STD-883 |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
8 |
CHIP CARRIER |
125 Cel |
256X8 |
256 |
-55 Cel |
QUAD |
S-XQCC-N28 |
5.25 V |
Not Qualified |
2048 bit |
4.75 V |
||||||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-J36 |
3.6 V |
3.76 mm |
10.16 mm |
4194304 bit |
3.135 V |
23.495 mm |
8 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
IN-LINE |
2.54 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDIP-T16 |
5.5 V |
4.7 mm |
7.62 mm |
Not Qualified |
64 bit |
4.5 V |
21.6 mm |
8 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
CACHE TAG SRAM MODULE |
COMMERCIAL |
80 |
SIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1750 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM80(UNSPEC) |
SRAMs |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
SINGLE |
R-PSMA-N80 |
Not Qualified |
9437184 bit |
12 ns |
||||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
SMALL OUTLINE |
85 Cel |
OPEN-DRAIN |
256X8 |
256 |
1 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G8 |
6 V |
Not Qualified |
2048 bit |
2.5 V |
I2C BUS INTERFACE |
NO |
||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
.005 Amp |
15 ns |
||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
1048576 bit |
.005 Amp |
10 ns |
||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
256X8 |
256 |
-40 Cel |
DUAL |
R-PDSO-G8 |
6 V |
2.65 mm |
7.5 mm |
2048 bit |
2.5 V |
2-WIRE I2C SERIAL INTERFACE |
7.55 mm |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
256 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP8,.4 |
SRAMs |
1.27 mm |
85 Cel |
OPEN-DRAIN |
256X8 |
256 |
1 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G8 |
6 V |
2.65 mm |
.1 MHz |
7.5 mm |
Not Qualified |
2048 bit |
2.5 V |
2-WIRE I2C SERIAL INTERFACE |
40 |
260 |
NO |
7.55 mm |
3400 ns |
|||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G16 |
1 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
NO |
9.9 mm |
60 ns |
||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
330 mA |
262144 words |
COMMON |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
70 Cel |
256KX18 |
256K |
3.125 V |
0 Cel |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
90 MHz |
14 mm |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
YES |
.005 Amp |
20 mm |
8.5 ns |
|||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
0 Cel |
TIN LEAD |
QUAD |
1 |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE |
e0 |
YES |
20 mm |
8 ns |
||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
20 mm |
4 ns |
|||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
1179648 bit |
3.135 V |
20 mm |
4 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-J32 |
3.6 V |
3.75 mm |
10.16 mm |
1048576 bit |
3.135 V |
20.955 mm |
12 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
265 mA |
65536 words |
COMMON |
5 |
5 |
18 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
4.75 V |
0 Cel |
TIN LEAD |
QUAD |
1 |
S-PQCC-J52 |
5.25 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1179648 bit |
4.75 V |
SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE |
e0 |
YES |
.095 Amp |
19.1262 mm |
10 ns |
|||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
2.5 |
2.5 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.3 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
1 |
2.7 V |
2.4 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
.01 Amp |
22 mm |
8.5 ns |
|||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
20 mm |
2.6 ns |
|||||||||||||||||||
NXP Semiconductors |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
2.5 |
2.5 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.3 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
1 |
2.7 V |
2.4 mm |
14 mm |
Not Qualified |
9437184 bit |
2.3 V |
.01 Amp |
22 mm |
8.5 ns |
|||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
256X1 |
256 |
3 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G16 |
15 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
3 V |
NO |
9.9 mm |
580 ns |
||||||||||||||||||||||
NXP Semiconductors |
CACHE TAG SRAM MODULE |
OTHER |
160 |
DIMM |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
705 mA |
65536 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM160 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX64 |
64K |
3.14 V |
-10 Cel |
DUAL |
R-PDMA-N160 |
Not Qualified |
4194304 bit |
.505 Amp |
8 ns |
||||||||||||||||||||||||
NXP Semiconductors |
CACHE SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
GRID ARRAY |
1.27 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B119 |
3.6 V |
2.4 mm |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
22 mm |
3.5 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.