NXP Semiconductors SRAM 805

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

SCM6343YJ11AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

255 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-J44

3.63 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

28.575 mm

11 ns

74HCT670D

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

SMALL OUTLINE

SOP16,.25

Other Memory ICs

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

1

R-PDSO-G16

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

16 bit

4.5 V

e4

30

260

NO

9.9 mm

60 ns

74HC670D,653

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

1

R-PDSO-G16

1

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e4

30

260

NO

9.9 mm

59 ns

SCM6323AYJ12AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

.005 Amp

12 ns

8602301EA

NXP Semiconductors

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

4096 words

5

5

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

3-STATE

4KX1

4K

-55 Cel

DUAL

R-XDIP-T16

5.5 V

Qualified

4096 bit

4.5 V

120 ns

74F219AD

NXP Semiconductors

STANDARD SRAM

COMMERCIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

TTL

GULL WING

PARALLEL

ASYNCHRONOUS

16 words

5

4

SMALL OUTLINE

70 Cel

3-STATE

16X4

16

0 Cel

DUAL

1

R-PDSO-G16

5.5 V

Not Qualified

64 bit

4.5 V

NO

8 ns

74F219AD-T

NXP Semiconductors

STANDARD SRAM

COMMERCIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

TTL

GULL WING

PARALLEL

ASYNCHRONOUS

16 words

5

4

SMALL OUTLINE

70 Cel

3-STATE

16X4

16

0 Cel

DUAL

1

R-PDSO-G16

5.5 V

Not Qualified

64 bit

4.5 V

NO

8 ns

SCM6343TS15A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

240 mA

262144 words

COMMON

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

.8 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

4194304 bit

3 V

YES

.01 Amp

18.41 mm

15 ns

935154920518

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDSO-G8

6 V

2.65 mm

7.5 mm

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

7.55 mm

HEC4505BDB

NXP Semiconductors

STANDARD SRAM

MILITARY

14

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

5

1

IN-LINE

2.54 mm

125 Cel

3-STATE

64X1

64

3 V

-55 Cel

DUAL

1

R-GDIP-T14

15 V

5.08 mm

7.62 mm

Not Qualified

64 bit

4.5 V

NO

660 ns

8X350/BWA

NXP Semiconductors

STANDARD SRAM

MILITARY

22

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

TTL

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

256 words

5

8

IN-LINE

125 Cel

256X8

256

-55 Cel

DUAL

R-CDIP-T22

5.25 V

2048 bit

4.75 V

SCM6323AYJ10A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

190 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

.005 Amp

10 ns

74HC670PW-T

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

6 V

1.1 mm

4.4 mm

Not Qualified

16 bit

2 V

5 mm

59 ns

935154920118

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDSO-G8

6 V

2.65 mm

7.5 mm

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

7.55 mm

74HC670D,652

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

2/6

4

SMALL OUTLINE

SOP16,.25

Other Memory ICs

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G16

1

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e4

NO

9.9 mm

59 ns

54S189/BEA

NXP Semiconductors

STANDARD SRAM

MILITARY

16

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

125 Cel

3-STATE

16X4

16

-55 Cel

DUAL

1

R-CDIP-T16

5.25 V

Not Qualified

64 bit

4.75 V

NO

50 ns

SCM6323AYJ15AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

135 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

.005 Amp

15 ns

74HCT670DB

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

SMALL OUTLINE, SHRINK PITCH

SSOP16,.3

Other Memory ICs

.65 mm

125 Cel

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

5.5 V

2 mm

5.3 mm

Not Qualified

16 bit

4.5 V

e4

30

260

6.2 mm

60 ns

8602301FX

NXP Semiconductors

CACHE SRAM

MILITARY

16

DFP

RECTANGULAR

UNSPECIFIED

YES

1

BIPOLAR

MIL-STD-883

FLAT

PARALLEL

ASYNCHRONOUS

256 words

5

1

FLATPACK

125 Cel

256X1

256

-55 Cel

DUAL

R-XDFP-F16

5.25 V

Not Qualified

256 bit

4.75 V

SCM6343YJ15A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

240 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-J44

3.63 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

28.575 mm

15 ns

PCF8570CP

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

256 words

5

8

IN-LINE

2.54 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

DUAL

1

R-PDIP-T8

6 V

4.2 mm

7.62 mm

Not Qualified

2048 bit

2.5 V

I2C BUS INTERFACE

NO

9.5 mm

10145F

NXP Semiconductors

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

ECL

-5.2 V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

165 mA

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

OPEN-EMITTER

16X4

16

-30 Cel

TIN LEAD

DUAL

1

R-GDIP-T16

Not Qualified

64 bit

e0

NO

13 ns

N74F189DB

NXP Semiconductors

STANDARD SRAM

COMMERCIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

TTL

GULL WING

PARALLEL

ASYNCHRONOUS

16 words

5

5

4

SMALL OUTLINE

SOP16,.25

SRAMs

1.27 mm

70 Cel

3-STATE

16X4

16

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G16

e0

SCM6343YJ15AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

240 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-J44

3.63 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

28.575 mm

15 ns

74HC670D-T

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

1

R-PDSO-G16

1

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e4

30

260

NO

9.9 mm

59 ns

74HCT670DB,112

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

SMALL OUTLINE, SHRINK PITCH

SSOP16,.3

Other Memory ICs

.65 mm

125 Cel

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

1

5.5 V

2 mm

5.3 mm

Not Qualified

16 bit

4.5 V

e4

6.2 mm

60 ns

5962-86052013X

NXP Semiconductors

STANDARD SRAM

MILITARY

28

QCCN

SQUARE

UNSPECIFIED

YES

1

BIPOLAR

MIL-STD-883

NO LEAD

PARALLEL

SYNCHRONOUS

256 words

5

8

CHIP CARRIER

125 Cel

256X8

256

-55 Cel

QUAD

S-XQCC-N28

5.25 V

Not Qualified

2048 bit

4.75 V

SCM6946YJ8

NXP Semiconductors

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

4194304 bit

3.135 V

23.495 mm

8 ns

933984380602

NXP Semiconductors

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

5

4

IN-LINE

2.54 mm

70 Cel

16X4

16

0 Cel

DUAL

R-PDIP-T16

5.5 V

4.7 mm

7.62 mm

Not Qualified

64 bit

4.5 V

21.6 mm

8 ns

MCM44A256BSG12

NXP Semiconductors

CACHE TAG SRAM MODULE

COMMERCIAL

80

SIMM

RECTANGULAR

PLASTIC/EPOXY

NO

NO LEAD

PARALLEL

ASYNCHRONOUS

1750 mA

262144 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM80(UNSPEC)

SRAMs

70 Cel

3-STATE

256KX36

256K

0 Cel

SINGLE

R-PSMA-N80

Not Qualified

9437184 bit

12 ns

PCF8570CT

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

DUAL

1

R-PDSO-G8

6 V

Not Qualified

2048 bit

2.5 V

I2C BUS INTERFACE

NO

SCM6323AYJ15A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

.005 Amp

15 ns

SCM6323ATS10AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

1048576 bit

.005 Amp

10 ns

PCF8570T/F5,112

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDSO-G8

6 V

2.65 mm

7.5 mm

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

7.55 mm

PCF8570TD-T

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP8,.4

SRAMs

1.27 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

DUAL

1

R-PDSO-G8

6 V

2.65 mm

.1 MHz

7.5 mm

Not Qualified

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

40

260

NO

7.55 mm

3400 ns

74HCT670D,652

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

SMALL OUTLINE

SOP16,.25

Other Memory ICs

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G16

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

16 bit

4.5 V

e4

NO

9.9 mm

60 ns

MCM63F819TQ8.5

NXP Semiconductors

CACHE SRAM

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

330 mA

262144 words

COMMON

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

.65 mm

70 Cel

256KX18

256K

3.125 V

0 Cel

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

90 MHz

14 mm

4718592 bit

3.135 V

FLOW THROUGH ARCHITECTURE

YES

.005 Amp

20 mm

8.5 ns

MCM69F737TQ8

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

3-STATE

128KX36

128K

0 Cel

TIN LEAD

QUAD

1

R-PQFP-G100

3.6 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE

e0

YES

20 mm

8 ns

MCM63P819KTQ133

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

4 ns

MCM69P618CTQ4R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX18

64K

0 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

1179648 bit

3.135 V

20 mm

4 ns

MCM6926AWJ12R

NXP Semiconductors

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-J32

3.6 V

3.75 mm

10.16 mm

1048576 bit

3.135 V

20.955 mm

12 ns

MCM67B618AFN10

NXP Semiconductors

CACHE SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

SYNCHRONOUS

265 mA

65536 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

64KX18

64K

4.75 V

0 Cel

TIN LEAD

QUAD

1

S-PQCC-J52

5.25 V

4.57 mm

19.1262 mm

Not Qualified

1179648 bit

4.75 V

SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE

e0

YES

.095 Amp

19.1262 mm

10 ns

MCM64Z836ZP8.5R

NXP Semiconductors

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

250 mA

262144 words

COMMON

2.5

2.5

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

2.3 V

0 Cel

BOTTOM

R-PBGA-B119

1

2.7 V

2.4 mm

14 mm

Not Qualified

9437184 bit

2.3 V

.01 Amp

22 mm

8.5 ns

MCM63P919TQ225

NXP Semiconductors

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

524288 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

225 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

20 mm

2.6 ns

MCM64Z836ZP8.5

NXP Semiconductors

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

250 mA

262144 words

COMMON

2.5

2.5

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

2.3 V

0 Cel

BOTTOM

R-PBGA-B119

1

2.7 V

2.4 mm

14 mm

Not Qualified

9437184 bit

2.3 V

.01 Amp

22 mm

8.5 ns

HEF4720BTD

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

256 words

5

1

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

256X1

256

3 V

-40 Cel

DUAL

1

R-PDSO-G16

15 V

1.75 mm

3.9 mm

Not Qualified

256 bit

3 V

NO

9.9 mm

580 ns

MCM64PC64TSG66

NXP Semiconductors

CACHE TAG SRAM MODULE

OTHER

160

DIMM

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

705 mA

65536 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM160

SRAMs

1.27 mm

85 Cel

3-STATE

64KX64

64K

3.14 V

-10 Cel

DUAL

R-PDMA-N160

Not Qualified

4194304 bit

.505 Amp

8 ns

MCM69P818ZP3.5R

NXP Semiconductors

CACHE SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

GRID ARRAY

1.27 mm

70 Cel

256KX18

256K

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B119

3.6 V

2.4 mm

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e0

22 mm

3.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.