NXP Semiconductors SRAM 805

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
935154900112	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5		8	IN-LINE			2.54 mm	85 Cel		256X8	256		-40 Cel		DUAL		R-PDIP-T8		6 V	4.2 mm		7.62 mm		2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE						9.5 mm
SCM69C233TQ15	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4096 words		3.3		64	FLATPACK, LOW PROFILE			.65 mm	85 Cel		4KX64	4K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		16 mm		262144 bit	3.1 V							20 mm	210 ns
SCM6323ATS10A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	1048576 bit							.005 Amp		10 ns
SCM69C233TQ15R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4096 words		3.3		64	FLATPACK, LOW PROFILE			.65 mm	85 Cel		4KX64	4K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		16 mm		262144 bit	3.1 V							20 mm	210 ns
SCM63P733ATQ133	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4 ns
N74F219AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	64 bit	4.5 V					NO		21.6 mm	8 ns
N74F410N	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		16 words		5		4	IN-LINE				70 Cel	3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T18		5.5 V				Not Qualified	64 bit	4.5 V								10 ns
N74F189AD	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	SMALL OUTLINE	SOP16,.25	SRAMs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V				Not Qualified	64 bit	4.5 V	INVERTED OUTPUTS				NO			8 ns
SCM6341ZP11A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY			1.27 mm	85 Cel		128KX24	128K		-40 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		3145728 bit	3 V							22 mm	11 ns
82S09/BXA	NXP Semiconductors	STANDARD SRAM	MILITARY	28		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		9	IN-LINE				125 Cel		64X9	64		-55 Cel		DUAL		R-CDIP-T28		5.25 V				Not Qualified	576 bit	4.75 V								80 ns
SCM6341ZP10C	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY			1.27 mm	85 Cel		128KX24	128K		-40 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		3145728 bit	3 V							22 mm	10 ns
74HCT670D-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		e4			NO		9.9 mm	60 ns
SCM69C232TQ20R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4096 words		3.3		64	FLATPACK, LOW PROFILE			.65 mm	85 Cel		4KX64	4K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		14 mm		262144 bit	3.1 V							20 mm	9 ns
PCF8570T/F5,518	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G8	2	6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO		7.55 mm	3400 ns
74HC670DB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V		e4	30	260			6.2 mm	59 ns
N74F219AD-T	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	64 bit	4.5 V					NO		9.9 mm	8 ns
SCM6343TS12A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	18.41 mm	12 ns
935018290602	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	64 bit	4.5 V							9.9 mm	8 ns
SCM63F733ATQ10R	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	10 ns
SCM6343YJ11A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-J44		3.63 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	28.575 mm	11 ns
54S189/BFA	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL		FLAT	PARALLEL	ASYNCHRONOUS		16 words		5		4	FLATPACK				125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	1	R-CDFP-F16		5.25 V				Not Qualified	64 bit	4.75 V					NO			50 ns
PCF8570P	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO	.0000004 Amp	9.5 mm
74HCT670PW-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		5.5 V	1.1 mm		4.4 mm	Not Qualified	16 bit	4.5 V							5 mm	60 ns
74HC670D	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm		3.9 mm	Not Qualified	16 bit	2 V		e4	30	260	NO		9.9 mm	59 ns
N74F670N	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4X4	4		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	16 bit	4.5 V					NO		21.6 mm	12.5 ns
74HCT670N	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	16 bit	4.5 V		e4			NO		21.6 mm	60 ns
PCF8570PN	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO	.0000004 Amp	9.5 mm
74HC670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V		e4					6.2 mm	59 ns
SCM6323AYJ12A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-J44						Not Qualified	1048576 bit							.005 Amp		12 ns
74HC670D/T3	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		6 V	1.75 mm		3.9 mm	Not Qualified	16 bit	2 V							9.9 mm	59 ns
74HCT670DB-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm		5.3 mm	Not Qualified	16 bit	4.5 V		e4					6.2 mm	60 ns
8602301EX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DIP	RECTANGULAR	UNSPECIFIED	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE				125 Cel		256X1	256		-55 Cel		DUAL		R-XDIP-T16		5.25 V				Not Qualified	256 bit	4.75 V
SCM6323ATS12A	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	1048576 bit							.005 Amp		12 ns
SCM63F733ATQ11R	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	11 ns
74HC670NB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5		4	IN-LINE				125 Cel	3-STATE	4X4	4		-40 Cel		DUAL	1	R-PDIP-T16		6 V				Not Qualified	16 bit	2 V					NO			59 ns
PCF8571TD-T	NXP Semiconductors	STANDARD SRAM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words				8	SMALL OUTLINE				70 Cel		128X8	128		-25 Cel		DUAL		R-PDSO-G8		6 V				Not Qualified	1024 bit	2.5 V
935018290118	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	64 bit	4.5 V							9.9 mm	8 ns
82S212/BWA-40	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	9	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X9	256		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22						Not Qualified				e0						70 ns
SCM6343TS15AR	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		DUAL		R-PDSO-G44		3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.97 V						.01 Amp	18.41 mm	15 ns
74HCT670PW	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		5.5 V	1.1 mm		4.4 mm	Not Qualified	16 bit	4.5 V							5 mm	60 ns
74HCT670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		5.5 V	4.7 mm		7.62 mm	Not Qualified	16 bit	4.5 V		e4			NO		21.6 mm	60 ns
74HCT670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm		5.3 mm	Not Qualified	16 bit	4.5 V		e4					6.2 mm	60 ns
PCF8571T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words		5		8	SMALL OUTLINE				85 Cel		128X8	128	1 V	-40 Cel		DUAL	1	R-PDSO-G8		6 V				Not Qualified	1024 bit	2.5 V	I2C BUS INTERFACE				NO
935154920512	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		256X8	256		-40 Cel		DUAL		R-PDSO-G8		6 V	2.65 mm		7.5 mm		2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE						7.55 mm
SCM63F733ATQ11	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	11 ns
N74F189AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.2 mm		7.62 mm	Not Qualified	64 bit	4.5 V	INVERTED OUTPUTS				NO		19.025 mm	8 ns
SCM69C432TQ20	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		16	FLATPACK, LOW PROFILE			.65 mm	85 Cel		64KX16	64K		-40 Cel		QUAD		R-PQFP-G100		3.5 V	1.6 mm		14 mm		1048576 bit	3.1 V							20 mm	8 ns
SCM6323AYJ10AR	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-J44						Not Qualified	1048576 bit							.005 Amp		10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.