STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M68AF031AL70N1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
IMS1630LH70S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.56	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28				Not Qualified	65536 bit			e0				.00007 Amp		700 ns
MK6116LN-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.445 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.000001 Amp		200 ns
5962-8670512ZX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel			4KX4	4K		-55 Cel		DUAL		R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V							12.192 mm	35 ns
IMS1624E-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.014 Amp	15.418 mm	30 ns
M68AW128ML55ND6F	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V			NOT SPECIFIED	260		.000009 Amp	18.41 mm	55 ns
5962-8868104XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER				125 Cel			64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V			Not Qualified	262144 bit	4.5 V								70 ns
M68AF127BL70B6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3				.0000045 Amp	42.035 mm	70 ns
5962-8751303XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4			NO		10.973 mm	45 ns
M68AW128M55ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	2097152 bit	2.7 V		e1				.00002 Amp	8 mm	55 ns
IMS1820E-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	30 ns
IMS1820E-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24				Not Qualified	262144 bit			e0				.01 Amp		25 ns
M68AF031AL70B6E	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	37.085 mm	70 ns
IMS1423N-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel		3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0			NO		10.795 mm	55 ns
M68AW128M55ND6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	128KX16	128K	1 V	-40 Cel	TIN	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V		e3				.00002 Amp	18.41 mm	55 ns
M68AF031AM55NS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	55 ns
IMS1420S-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel		3-STATE	4KX4	4K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		25.4 mm	55 ns
8413205YA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX1	16K		-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V					NO		10.795 mm	35 ns
IMS1620S-70L	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T22				Not Qualified	65536 bit			e0				.00025 Amp		70 ns
M68AF127BL55N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.0000045 Amp	18.4 mm	55 ns
5962-8552511XC	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	GOLD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e4			YES		35.56 mm	70 ns
IMS1423S-70M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel		3-STATE	4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0						70 ns
M68AW256D55ZB6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e1				.00002 Amp	8 mm	55 ns
5962-8670515RA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel			4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0					25.3365 mm	70 ns
MK48Z08B-20	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0			YES	.003 Amp		200 ns
IMS1627S-25M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V					YES			25 ns
IMS1600E-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	15.418 mm	45 ns
M68AR512DL70ZB1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel			512KX16	512K		0 Cel		BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	8 mm	Not Qualified	8388608 bit	1.65 V							10 mm	70 ns
M68AF031AM70N6E	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
IMS1423S-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel		3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			NO		25.4 mm	55 ns
M68AW127BM70N6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0				.0000045 Amp	18.4 mm	70 ns
M68AW512ML70ND1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			512KX16	512K		0 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V							18.41 mm	70 ns
IMS1624W-45S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	QUAD		R-XQCC-N28				Not Qualified	65536 bit			e0				.014 Amp		45 ns
IMS1625N-35M	STMicroelectronics	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel		QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V					NO		13.446 mm	35 ns
M68AW256DL70ND6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.00002 Amp	18.41 mm	70 ns
5962-8854504XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel		QUAD		R-CQCC-N28	5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V							13.97 mm	70 ns
5962-8868101LA	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	e0						35 ns
IMS1635S-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		15 ns
ET2147HN2	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit									45 ns
IMS1800S-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T24				Not Qualified	262144 bit			e0				.01 Amp		35 ns
IMS1630LS-70M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28	5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.0008 Amp	35.56 mm	70 ns
IMS1400P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0						35 ns
MKI6116S-20	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	105 Cel		3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28				Not Qualified	16384 bit			e0				.001 Amp		200 ns
5962-8868102LA	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	e0						45 ns
IMS1601LS55S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T22				Not Qualified	65536 bit			e0				.00007 Amp		55 ns
M68AW256MN70ZH1E	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	10 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1				.000009 Amp	8 mm	70 ns
5962-8854501LA	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE			2.54 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0					30.48 mm	35 ns
IMS1605P-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V			Not Qualified	65536 bit	4.5 V		e0			NO	.002 Amp		15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.