STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IMS1624W-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.014 Amp	13.97 mm	55 ns
IMS1820W-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	13.97 mm	45 ns
IMS1800S-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T24				Not Qualified	262144 bit			e0				.01 Amp		25 ns
IMS1423N-35M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	130 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel		3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0			NO		10.795 mm	35 ns
5962-8854502XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28	5.5 V	3.048 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0					13.97 mm	45 ns
M68AW511AL70MC6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.303 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	20.445 mm	70 ns
IMS1620P-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.455 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	26.289 mm	30 ns
IMS1620E-30	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	15.418 mm	30 ns
5962-8685914XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX4	16K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES		13.97 mm	55 ns
M68AW256ML70ZB6E	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e1				.000009 Amp	8 mm	70 ns
IMS1635E-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		20 ns
MK48Z02-15	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel			2KX8	2K		0 Cel		DUAL		R-PDIP-T24				Not Qualified	16384 bit							.001 Amp		150 ns
MK48Z32B70	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION PERIOD; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e0			YES	.002 Amp		70 ns
5962-8552511YA	STMicroelectronics	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	8KX8	8K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N32	5.5 V	1.981 mm	11.43 mm	Not Qualified	65536 bit	4.5 V		e0			YES		13.97 mm	70 ns
MK41S80N15	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.25 V	5.334 mm	7.62 mm	Not Qualified	16384 bit	4.75 V	TOTEM-POLE MATCH OUTPUT; FLASH CLEAR	e0			YES	.12 Amp	26.289 mm	15 ns
M68AW256ML55ZB1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	26 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e1				.000009 Amp	8 mm	55 ns
M68AF031AL55MS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	260		.000006 Amp	18.22 mm	55 ns
5962-8670514RA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel			4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0					25.4 mm	55 ns
5962-8751304XA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel			1KX4	1K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4					10.973 mm	25 ns
M624256-17E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.001 Amp	17.935 mm	17 ns
M68AW031AM70NS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	1.5 V	0 Cel		DUAL		R-PDSO-G28	3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
MKI6116N-20	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	105 Cel		3-STATE	2KX8	2K	4.5 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.445 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.001 Amp		200 ns
MK48128N-85	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V					YES		41.91 mm	85 ns
MK62940Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel		3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	19 ns
M68AW031AM55MS1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	18.11 mm	55 ns
MK48Z30B-15	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			YES	.002 Amp		150 ns
M68AW128ML55ND6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V		e0				.000009 Amp	18.41 mm	55 ns
IMS1820P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	29.46 mm	45 ns
IMS1635P-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		15 ns
M68AR024DN70ZH6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	8 mm	Not Qualified	16777216 bit	1.65 V							10 mm	70 ns
M621064-10E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	10 ns
IMS1627S-20M	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel		DUAL	1	R-CDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V					YES			20 ns
M69KB096AB70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N	1.95 V			Not Qualified	67108864 bit	1.7 V						.00001 Amp		70 ns
M68AF511AM55MC1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	3 mm	11.305 mm	Not Qualified	4194304 bit	4.5 V		e0				.000009 Amp	20.445 mm	55 ns
IMS1624S-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T24				Not Qualified	65536 bit			e0				.014 Amp		25 ns
M68AW127BL10NK6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0				.000005 Amp	11.8 mm	100 ns
IMS1627N-35M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX4	16K	2 V	-55 Cel		QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V					YES		13.97 mm	35 ns
MK48127X-85	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-J32	5.5 V			Not Qualified	1048576 bit	4.5 V					YES			85 ns
IMS1600E-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	77 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24				Not Qualified	65536 bit			e0				.014 Amp		25 ns
MK48Z32AB-10	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.002 Amp		100 ns
M69KB096AA70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N	1.95 V			Not Qualified	67108864 bit	1.7 V						.00012 Amp		70 ns
M68AF031AL70MS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28	5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	260		.000006 Amp	18.22 mm	70 ns
5962-8685911LX	STMicroelectronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel			16KX4	16K		-55 Cel		DUAL		R-XDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V							30.48 mm	70 ns
M68AF031AL55N6E	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN/TIN BISMUTH	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e6	NOT SPECIFIED	260		.000006 Amp	11.8 mm	55 ns
M69AR024BL80ZB8T	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	1MX16	1M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	2.25 V	1.2 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1				.00001 Amp	8 mm	80 ns
MK48S74X35/20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.25 V	3.556 mm	7.518 mm	Not Qualified	65536 bit	4.75 V	OPEN DRAIN MATCH OUTPUT	e0				.16 Amp	17.932 mm	35 ns
M68AW256ML70ND1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	18.41 mm	70 ns
IMS1626P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.