STMicroelectronics SRAM 2,190

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M68AW256DL55ZB1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	26 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	1.5 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e1				.00002 Amp	7 mm	55 ns
M69AW048BL70ZB8T	STMicroelectronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.7 V		e0				.00001 Amp	8 mm	70 ns
IMS1820N-30M	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	64KX4	64K		-55 Cel		QUAD	1	R-CQCC-N28	5.5 V	1.981 mm	8.89 mm	Not Qualified	262144 bit	4.5 V					NO		13.97 mm	30 ns
IMS1635E-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp		15 ns
M68AF031AM70NS1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	70 ns
M68Z512-70NC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0					20.95 mm	70 ns
IMS1629S-15	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX4	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T24	5.5 V	4.013 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.00007 Amp	30.48 mm	15 ns
IMS1605E-25S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J24				Not Qualified	65536 bit			e0				.002 Amp		25 ns
5962-8670512ZA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel			4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V		e0					12.192 mm	35 ns
IMS1601LE-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.00007 Amp	15.418 mm	45 ns
M68AF031AL55N6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.000006 Amp	11.8 mm	55 ns
MK48S80N20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.25 V	4.57 mm	7.62 mm	Not Qualified	65536 bit	4.75 V	TOTEM-POLE MATCH OUTPUT	e0			YES	.16 Amp	34.67 mm	20 ns
M38510/23112BWX	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	UNSPECIFIED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		4	IN-LINE				125 Cel			256X4	256		-55 Cel		DUAL		R-XDIP-T22	5.5 V			Not Qualified	1024 bit	4.5 V								75 ns
MK41H80P-20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel			4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22				Not Qualified	16384 bit			e0				.12 Amp		20 ns
IMS1203S-25M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel		3-STATE	4KX1	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.005 Amp	22.86 mm	25 ns
T74LS170D1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel			4X4	4		0 Cel		DUAL		R-GDIP-T16	5.25 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.75 V								40 ns
M68AF511AL55NC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.000009 Amp	20.95 mm	55 ns
IMS1800E-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.556 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	15.418 mm	25 ns
M68AW256D70ZB6	STMicroelectronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e1				.00002 Amp	8 mm	70 ns
IMS1223A-45M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel		3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e0			NO	.005 Amp	10.973 mm	45 ns
M68AW127BM70MC6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.303 mm	Not Qualified	1048576 bit	2.7 V		e0				.0000045 Amp	20.447 mm	70 ns
MK41S80X12	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.25 V	3.556 mm	7.62 mm	Not Qualified	16384 bit	4.75 V	TOTEM-POLE MATCH OUTPUT; FLASH CLEAR	e0			YES	.12 Amp	15.418 mm	12 ns
M68AW511AM70MC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	3 mm	11.305 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	20.445 mm	70 ns
M68AR024D70ZH6T	STMicroelectronics
M68AF031AL70B6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.000006 Amp	37.085 mm	70 ns
M68Z128W-70N1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	1.4 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	70 ns
M68AW128ML70ND6E	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	2.7 V			NOT SPECIFIED	260		.000009 Amp	18.41 mm	70 ns
M68AF127BM55B6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3				.0000045 Amp	42.035 mm	55 ns
5962-8670512XA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	4KX4	4K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0			NO		10.795 mm	35 ns
IMS1601LP-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.00007 Amp	27.94 mm	45 ns
IMS1601LS-70M	STMicroelectronics	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel		3-STATE	64KX1	64K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T22	5.5 V	4.521 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.0008 Amp	27.94 mm	70 ns
M68AW256D70ZB6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	7 mm	Not Qualified	4194304 bit	2.7 V		e1				.00002 Amp	8 mm	70 ns
IMS1601LN55M	STMicroelectronics	STANDARD SRAM	MILITARY	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel		3-STATE	64KX1	64K	2 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.0008 Amp	13.446 mm	55 ns
MK48H64P-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDIP-T28				Not Qualified	65536 bit			e0				.00001 Amp		55 ns
MK48256N-120	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28				Not Qualified	262144 bit			e0				.0005 Amp		120 ns
IMS1423W-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel		3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0			NO		10.795 mm	50 ns
M616Z08-20MH3TR	STMicroelectronics	STANDARD SRAM	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOP44,.5,32	SRAMs	.8 mm	125 Cel		3-STATE	8KX16	8K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	3.05 mm	8.23 mm	Not Qualified	131072 bit	3 V	IT ALSO OPERATES AT 2.6V	e0				.001 Amp	17.71 mm	36 ns
MK48Z30AB-12	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	9.652 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.002 Amp		120 ns
M68AW031AM55MS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel		DUAL		R-PDSO-G28	3.6 V	2.85 mm	8.407 mm	Not Qualified	262144 bit	2.7 V			30	260		.000006 Amp	18.11 mm	55 ns
IMS1601LW-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel		3-STATE	64KX1	64K	2 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.00007 Amp	13.446 mm	45 ns
M69AR048AL85ZB8	STMicroelectronics	STANDARD SRAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel		BOTTOM		R-PBGA-B48	1.95 V	1.2 mm	6 mm	Not Qualified	33554432 bit	1.65 V						.0001 Amp	8 mm	85 ns
5962-8751306VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel			1KX4	1K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4					22.86 mm	45 ns
M68AW512MN55ND1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	512KX16	512K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		e0				.00001 Amp	18.41 mm	55 ns
5962-8552505YX	STMicroelectronics	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER			1.27 mm	125 Cel			8KX8	8K		-55 Cel		QUAD		R-CQCC-N32	5.5 V	1.981 mm	11.43 mm	Not Qualified	65536 bit	4.5 V							13.97 mm	55 ns
IMS1620W-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	22	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N22	5.5 V	1.981 mm	7.366 mm	Not Qualified	65536 bit	4.5 V		e0			NO	.014 Amp	13.446 mm	55 ns
M628032-20PS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.57 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	34.67 mm	20 ns
5962-8751305VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel		3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4			NO		22.86 mm	35 ns
MK41H80P-35	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			120 mA	4096 words		5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel			4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22				Not Qualified	16384 bit			e0				.12 Amp		35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.