Samsung SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6E0808C1E-JP15	Samsung	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.76 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE I/O	e0			.0005 Amp	18.42 mm	15 ns
KM616513J-15	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	210 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40		5.5 V	3.76 mm		10.16 mm	Not Qualified	524288 bit	4.5 V		e0		YES	.001 Amp	26.04 mm	15 ns
K7B403225B-QC75	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	230 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	117 MHz	14 mm	Not Qualified	4194304 bit	3.135 V		e0			.05 Amp	20 mm	7.5 ns
K7A401849A-PC160	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	2.37 V	0 Cel		QUAD		R-PQFP-G100				166 MHz		Not Qualified	4718592 bit						.04 Amp		3.5 ns
K6T0808U1D-GB10T	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	262144 bit			e0					100 ns
K7J321882C-FC330	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.3 Amp	17 mm	.45 ns
K7J321882C-FI300	Samsung	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.28 Amp	17 mm	.45 ns
K6T0808C1D-GF70	Samsung	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0				18.29 mm	70 ns
KM644002AEJ-17	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		1MX4	1M		-25 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V						20.96 mm	17 ns
KM718V789AT-44	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	440 mA	131072 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX18	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm	227 MHz	14 mm	Not Qualified	2359296 bit	3.135 V	SELF-TIMED WRITE CYCLE	e0			.02 Amp	20 mm	3.1 ns
K7Q321854M-FC25	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	SEPARATE	2.5	1.5/1.8,2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	2.4 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.6 V	1.4 mm	250 MHz	15 mm	Not Qualified	37748736 bit	2.4 V	PIPELINED ARCHITECTURE	e0				17 mm	2 ns
KM6164002CLJ-20	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS					25.58 mm	20 ns
K6R1008V1C-TC20T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	1048576 bit			e0			.005 Amp		20 ns
K7B323635C-QI75T	Samsung	STANDARD SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	290 mA	1048576 words	COMMON		2.5/3.3	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	1MX36	1M	2.38 V	-40 Cel	TIN SILVER COPPER	QUAD		R-PQFP-G100				117 MHz		Not Qualified	37748736 bit			e1					7.5 ns
K6T1008C2C-YP700	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V						18.4 mm	70 ns
KM62256CLTGE-LU	Samsung	STANDARD SRAM	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	262144 bit			e0			.00002 Amp		120 ns
K6T1008V2C-YB10	Samsung	STANDARD SRAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3 V						11.8 mm	100 ns
KM718V087T-90000	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		1MX18	1M		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V						20 mm
K6R1016C1D-JC12	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	28.58 mm	12 ns
KM62256ALPI-12	Samsung	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0		YES	.00005 Amp	36.45 mm	120 ns
K7K1636T2C-FC400	Samsung	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	900 mA	524288 words	COMMON	1.8	1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.35 Amp	15 mm	.45 ns
K7A801800B-HC160	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE					22 mm	3.5 ns
K7N163645M-QC130	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX36	512K		0 Cel		QUAD		R-PQFP-G100		2.625 V	1.6 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE					20 mm	4.2 ns
K6T2008V2A-YB700	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel		256KX8	256K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified	2097152 bit	3 V						11.8 mm	70 ns
K6X1008C2D-PQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	1048576 bit						.000025 Amp		70 ns
KM6264BLSP-12	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28						Not Qualified	65536 bit			e0			.00005 Amp		120 ns
K6X4008T1F-YQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.7 V					.00003 Amp	11.8 mm	85 ns
K7N801801B-PI160	Samsung	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel		QUAD		R-PQFP-G100	2	3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE				.06 Amp	20 mm	3.5 ns
KM718V089P-54	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	1048576 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel		QUAD		R-PQFP-G100				185 MHz		Not Qualified	18874368 bit						.03 Amp		3.3 ns
K7S1618T4C-EC40T	Samsung	STANDARD SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	850 mA	1048576 words	SEPARATE		1.5,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3			400 MHz		Not Qualified	18874368 bit			e1			.35 Amp		.45 ns
K6L0908V2A-YF10T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	524288 bit			e0					100 ns
KM6161002AT1200	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	65536 words	COMMON	5		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		1048576 bit	4.5 V				YES	.025 Amp	18.41 mm	12 ns
K7N801801A-TC150	Samsung	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V						20 mm	3.8 ns
K7A161809A-QC22	Samsung	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		1MX18	1M		0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	18874368 bit	3.135 V		e0				20 mm	2.8 ns
K7R163684B-FC20	Samsung	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	200 MHz	15 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0			.19 Amp	17 mm	.45 ns
KM718BV1002T-7	Samsung	STANDARD SRAM		50	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	SMALL OUTLINE						64KX18	64K				DUAL		R-PDSO-G50						Not Qualified	1179648 bit								7 ns
K7N401809A-QC25	Samsung	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	490 mA	262144 words	COMMON		2.5/3.3,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3			250 MHz		Not Qualified	4718592 bit			e0			.01 Amp		2.4 ns
K7A163600A-QI22	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	430 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	512KX36	512K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.465 V	1.6 mm	225 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.06 Amp	20 mm	2.8 ns
K7N803601M-HC13	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V						22 mm	4.2 ns
KM616FU8000TI-7	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.3 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e0			.000006 Amp	18.41 mm	70 ns
KM62256BLGI-12L	Samsung	STANDARD SRAM			SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE						32KX8	32K				DUAL		R-PDSO-G						Not Qualified	262144 bit								120 ns
K7N161845A-FI25	Samsung	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	470 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	2.38 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165		2.625 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0			.06 Amp	15 mm	2.6 ns
KM616FU4010ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.3 V	.94 mm		8.2 mm	Not Qualified	4194304 bit	2.7 V		e0				8.7 mm	100 ns
K7A401849A-PC20T	Samsung	STANDARD SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	SYNCHRONOUS	390 mA	262144 words	COMMON	2.5	2.5	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	2.37 V	0 Cel		QUAD		R-PQFP-G100				200 MHz		Not Qualified	4718592 bit						.04 Amp		3.1 ns
K6R1016V1C-JI150	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-J44	3					Not Qualified	1048576 bit				240		.005 Amp		15 ns
K7B163225A-QI75	Samsung	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	16777216 bit	3.135 V						20 mm	7.5 ns
K6L0908V2A-GF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		64KX8	64K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	524288 bit	3 V						20.47 mm	85 ns
K6L0908V2A-GF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32						Not Qualified	524288 bit			e0					70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.